Results 111 to 120 of about 8,512 (209)

Monolayer MoS₂ field effect transistor with low Schottky barrier height with ferromagnetic metal contacts. [PDF]

Sci Rep, 2019
Gupta S, Rortais F, Ohshima R, Ando Y, Endo T, Miyata Y, Shiraishi M.   +6 more
europepmc   +1 more source

A new <i>in situ</i> method for modifying the Schottky barrier height at buried metal-organic semiconductor interfaces. [PDF]

Natl Sci Rev
Sirringhaus H.
europepmc   +1 more source

Tuning the Schottky barrier height in single- and bi-layer graphene-inserted MoS₂/metal contacts. [PDF]

Sci Rep
Zhao X, Xia C, Li L, Wang A, Cao D, Zhang B, Fang Q.   +6 more
europepmc   +1 more source

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing. [PDF]

Materials (Basel), 2018
Sun F, Li C, Fu C, Zhou X, Luo J, Zou W, Qiu ZJ, Wu D.   +7 more
europepmc   +1 more source

Dependence of the Metal-Insulator-Semiconductor Schottky Barrier Height on Insulator Composition. [PDF]

ACS Appl Electron Mater
Davis BE, Strandwitz NC.
europepmc   +1 more source

Thermofield Effects in Graphite-like Amorphous Carbon Films with Nanoscale Structure. [PDF]

Materials (Basel)
Muratova EN, Vrublevsky IA, Moshnikov VA, Kozodaev DA, Gagarina AY, Parfenovich SE, Kavalenka DA.   +6 more
europepmc   +1 more source

An n-type Schottky contact with low tunneling resistance in a 2D FeB₂/SiC heterostructure. [PDF]

Nanoscale Adv
Cuong NQ, Long LP, Phuc HV, Hien ND.
europepmc   +1 more source

Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing. [PDF]

Materials (Basel), 2016
Fu C, Zhou X, Wang Y, Xu P, Xu M, Wu D, Luo J, Zhao C, Zhang SL.   +8 more
europepmc   +1 more source

Modulating Persistent Photoconductivity through Barrier Engineering for High-performance and Multifunctional Two-dimensional Optoelectronic Devices. [PDF]

Adv Sci (Weinh)
Huo P, Zhang X, Cui X, Wang Y, Zhou D, Man B, Jeon I, Yoo WJ, Yang C.   +8 more
europepmc   +1 more source

Dirac metallic FeB₂-induced low Schottky barrier and electrically tunable Schottky contact in FeB₂/MoS₂ van der Waals heterostructure. [PDF]

Nanoscale Adv
Nhan TT, Cuong NQ, Nguyen CV, Phuc HV.
europepmc   +1 more source