Results 111 to 120 of about 1,488,769 (288)

The analysis of carrier transport mechanism at the interface of BZOPET-GR Schottky contact

Materials Research Express
Through the hydrothermal technique, we successfully deposited boron (B)-doped zinc oxide nanorods (ZnO NRs) onto a polyethylene terephthalate (PET)/graphene (GR) flexible substrate, creating a B-ZnO/PET/GR Schottky contact.
Jianhua Zhang, Yapeng Li, Jiqiang Jia, Zhaoyu Luo   +3 more
doaj   +1 more source

The Barrier Inhomogeneity and the Electrical Characteristics of W/Au β-Ga₂O₃ Schottky Barrier Diodes

Micromachines
In this work, the electrical properties of the Ga2O3 Schottky barrier diodes (SBDs) using W/Au as the Schottky metal were investigated. Due to the 450 °C post-anode annealing (PAA), the reduced oxygen vacancy defects on the β-Ga2O3 surface resulted in ...
Lei Xie, Tao Zhang, Shengrui Xu, Huake Su, Hongchang Tao, Yuan Gao, Xu Liu, Jincheng Zhang, Yue Hao   +8 more
doaj   +1 more source

Deciphering the Crystallinity‐Dependent Sensitivity of Charge Injection in n‐Channel Organic Transistors: Reliable Characterization and Optimized Performance

Advanced Science, EarlyView.
Precise characterization of n‐type organic semiconductors necessitates decoupling interfacial constraints from intrinsic charge transport. This work reveals that disordered polymers are particularly vulnerable to contact‐limited bottlenecks compared to their crystalline counterparts.
Walid Boukhili, Chan Zhang, Jianeng Ma, Changwoo Yu, Chee Leong Tan, Huabin Sun, Zhihao Yu, Guangan Yang, Xiang Wan, Li Zhu, Yong Xu, Liyang Yu, Ruipeng Li, Seung‐Hoon Lee, Zhuping Fei, Dongyoon Khim   +15 more
wiley   +1 more source

A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application. [PDF]

Nanomaterials (Basel), 2021
Kaufmann IR, Zerey O, Meyers T, Reker J, Vidor F, Hilleringmann U.   +5 more
europepmc   +1 more source

The Schottky barrier height at the CoSi2/Si(111) interface

, 1988
The Schottky barrier height for the CoSi2/Si(111) interface is calculated using a tight-binding theory. It is found that the barrier height is 0.55 eV for the model with fivefold-coordinated Co atoms at the interface and 0.13 eV for the model with ...
Matthai, Clarence Cherian, Rees, N. V.
core   +1 more source

Coexisting Volatile and Nonvolatile Switching in 3D ALD‐IGZO Vertical RRAM for Fully Hardware‐Based Wide Reservoir Computing

Advanced Science, EarlyView.
A conformal ALD‐IGZO vertical RRAM integrates volatile and nonvolatile switching within a compact 2F architecture. Before forming, tunable volatile dynamics provide fading‐memory reservoir states, while after forming, stable multilevel conductance modulation enables hardware readout.
Seeun Lee, Jaewon Park, Nawoon Kim, Seohyeon Ju, Seong‐Cheol Jang, Hyun‐Suk Kim, Sungjun Kim   +6 more
wiley   +1 more source

An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors

, 2009
The gain mechanism in GaN Schottky barrier ultraviolet photodetectors is investigated by focused light beam. When the incident light illuminates the central region of the Schottky contact electrode, the responsivity changes very little with the increase ...
Yang H, Zhao DG, Zhu JJ, Wang H, Zhang SM, Jiang DS, Liu ZS, Zhao DG Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn   +7 more
core  

Smart Way to Adjust Schottky Barrier Height in 130 nm BiCMOS Process for sub-THz Applications

, 2020
International audienceIn this paper, an innovative Schottky diode architecture is proposed and implemented in 130 nm BiCMOS technology. A state-of-the-art 1 THz cut-off frequency is measured and an innovative way to modify the height of the Schottky ...
Frederic Gianesello, Ducournau, Guillaume, Gidel, Vincent, Guitard, Nicolas, Nicolas Guitard, Cyril Luxey, Avenier, Gregory, Chevalier, Pascal, Michel Buczko, Guillaume Ducournau, Gianesello, Frederic, Gregory Avenier, Vincent Gidel, Luxey, Cyril, Pascal Chevalier, Buczko, Michel   +15 more
core   +1 more source

Learning Work Function via Implicit Reasoning on Electrostatic Potential Landscapes

Advanced Science, EarlyView.
StructPot‐CLR establishes a cross‐modal contrastive learning framework that aligns the crystal structures of 2D materials with plane‐averaged electrostatic potential landscapes for physically informed work‐function prediction. The model achieves an MAE of 0.265 eV and an R2 of 0.902 on the held‐out test set while accurately preserving key morphological
Haoyu Wan, Yue Wu, Tianhao Su, Deng Pan
wiley   +1 more source

Monolithic InSb nanostructure photodetectors on Si using rapid melt growth. [PDF]

Nanoscale Adv, 2023
Menon H, Jeddi H, Morgan NP, Fontcuberta I Morral A, Pettersson H, Borg M.   +5 more
europepmc   +1 more source