Results 101 to 110 of about 1,488,769 (288)

Author Correction: The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS₂ heterojunction: a first-principles study. [PDF]

Sci Rep, 2022
Sorkin V, Zhou H, Yu ZG, Ang KW, Zhang YW.   +4 more
europepmc   +1 more source

The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS₂ heterojunction: a first-principles study. [PDF]

Sci Rep, 2022
Sorkin V, Zhou H, Yu ZG, Ang KW, Zhang YW.   +4 more
europepmc   +1 more source

Harmonizing Rigidity and Flexibility: Embedding COF Quantum Dots Into Extracellular Matrix Gel as Carbon Monoxide Depot for Acoustically Triggered Time‐Programmable Anti‐Infective Therapy

Advanced Science, EarlyView.
A rigid‑flexible integrated CO depot is engineered by embedding rigid COFQDs into a flexible ECM gel network. The rigid framework enables high‑capacity CO storage and sonodynamic bacterial killing, while the flexible ECM gel controls sustained CO release, collectively eradicating multidrug‑resistant infection and promoting scarless healing.
Baohong Sun, Fang Han, Chunxiao Zhu, Zhiyuan Yang, Haoru Wang, Jinpei Mei, Jie Chen, Jingwen Zhu, Zihan Bo, Taju Wu, Xiaogang Zhou, Tao Ma, Yutian Su, Youhui Lin   +13 more
wiley   +1 more source

Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes

AIP Advances, 2015
This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode characteristics by the introduction of a layer of HfO2 (5 nm) between the metal and semiconductor interface.
Arjun Shetty, Basanta Roul, Shruti Mukundan, Lokesh Mohan, Greeshma Chandan, K. J. Vinoy, S. B. Krupanidhi   +6 more
doaj   +1 more source

Bias-Modified Schottky Barrier Height-Dependent Graphene/ReSe₂ van der Waals Heterostructures for Excellent Photodetector and NO₂ Gas Sensing Applications. [PDF]

Nanomaterials (Basel), 2022
Nazir G, Rehman A, Hussain S, Hakami O, Heo K, Amin MA, Ikram M, Patil SA, Din MAU.   +8 more
europepmc   +1 more source

Schottky barrier height at the Au/porous silicon interface

, 1998
The Schottky barrier height at the Au/porous silicon interface has been studied with ballistic electron emission microscopy (BEEM). The porous silicon thin films were prepared by laser ablation.
Ke, M., Laiho, R., Matthai, Clarence Cherian, Pavlov, A.   +3 more
core   +1 more source

Single‐Atom‐Enhanced Fully Inkjet‐Printed Electrochemical Sensor for Dopamine Detection

Advanced Science, EarlyView.
Fully inkjet‐printed paper‐based dopamine sensors are fabricated using nitrogen‐doped graphene acid functionalized with copper single atoms. The copper sites uniquely enhance dopamine oxidation through strong molecular adsorption, as verified by electrochemical measurements and DFT calculations. The approach highlights the potential of single‐atom inks
Martin‐Alex Nalepa, David Panáček, Vítězslav Hrubý, Matěj Jendrišák, Rostislav Langer, Michal Langer, Petr Jakubec, Ivan Dědek, Vojtěch Kupka, Michal Mazur, Radek Zbořil, Michal Otyepka   +11 more
wiley   +1 more source

Spectral‐Kinetic Synergy in Au‐Network Engineered FeTiO3: A Multi‐Field Coupling Strategy for Lunar In Situ Resource Utilization

Advanced Science, EarlyView.
How can humanity achieve lunar self‐sufficiency? We utilize Au topology networks to modify the abundant lunar ilmenite. This catalyst, under sunlight, can convert waste carbon dioxide into space fuel. This design leverages the moon's natural vacuum for green manufacturing, avoiding the waste of gold and serving as “artificial chloroplasts” to sustain ...
Yahang Wang, Quanxin Wang, Pakkin Leong, Shi Feng, Meng Wang, Runyang Mo, Xianjin Shi, Xiaohui Li, Gangqiang Zhu, Chipui Tang   +9 more
wiley   +1 more source

Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility Transistors. [PDF]

Micromachines (Basel), 2022
Chakraborty S, Kim TW.
europepmc   +1 more source

Determination of the laterally homogeneous barrier height of metal/p-InP Schottky barrier diodes

, 2009
We have reported a study of a number of metal/p-type InP (Cu, Au, Al, Sn, Pb, Ti, Zn) Schottky barrier diodes (SBDs). Each one diode has been identically prepared on p-InP under vacuum conditions with metal deposition.
Turut, A., Asubay, S., Gullu, O.
core   +1 more source