Results 101 to 110 of about 8,512 (209)
Modification of Al/Si interface and Schottky barrier height with chemical treatment
, 2002 The influence of different chemical treatments on the electrical behaviour of n- and p-type Al/Si Schottky junctions was studied. A Schottky barrier height of 0.91 eV was achieved on p-type Si probably due to the unpinning of the Fermi-level at the Al ...
Vo Van, Tuyen +4 more
core
Lognormal Lateral Distribution of Barrier Height in Au/n-GaAs Schottky Junctions?
, 1992 Experimental capacitance-voltage (C-V) characteristics are presented for Au/n-GaAs Schottky contacts. The deviation of the obtained C-V characteristics from the theoretical one including the linear regions of the 1/Ca-V plot may be explained by either ...
ZS. J. Horváth
core +1 more source
IEEE Journal of the Electron Devices SocietyThe ballistic transport behaviors of SOI nMOSFETs with NiSi metal source/drain (S/D) have been investigated. It is found that the suppression of Schottky barrier height for holes results in an improvement of carrier injection velocity (vinj ...
Rui Su +9 more
doaj +1 more source
Modification of Schottky barrier height by surface grain boundaries of polycrystalline silicon
, 1980 It is found that the Schottky barrier height φBn depends on the grain-boundary surface state density DBS and the boundary density dB, which is defined as the length of grain boundary on the surface per unit area (inversely proportional to the average ...
E. S. Yang, C. M. Wu, Wu, CM, Yang, ES
core +1 more source
The External Electric Field-Induced Tunability of the Schottky Barrier Height in Graphene/AlN Interface: A Study by First-Principles. [PDF]
Nanomaterials (Basel), 2020 Liu X, Zhang Z, Lv B, Ding Z, Luo Z.
europepmc +1 more source
Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing
, 2018 The effect of preannealing of AlGaN under an oxygen ambient on the improvement of the Schottky barrier height on an AlGaN/GaN heterostructure was studied using synchrotron radiation photoemission spectroscopy.
Jeon, CM, Lee, JL
core +1 more source
IEEE Photonics JournalDetection of photons with energy below the bandgap or Schottky barrier height of silicon has been limited in the past. Here, we reveal an approach that harnesses hot carriers through diffusion over a very thin metal to achieve silicon-based mid-infrared ...
Zih-Chun Su, Yao-Han Dong, Ching-Fuh Lin
doaj +1 more source
A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector
, 2008 A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector is proposed. In comparision with conventional i-CaN/n(+)-GaN structure, an additional thin p-GaN cap layer is introduced on the i-GaN(n(-)-GaN) in the new ...
Zhou M +3 more
core
, 2020 In this work, Cross-Sectional Ballistic Electron Emission Microscopy (= "XBEEM") is introduced to determine a Schottky barrier height profile of a GaAs-AlGaAs multi heterostructure in cross-sectional geometry.
G Strasser, J Smoliner, D Rakoczy
core
, 2010 The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a ...
Zhao DG (Zhao De-Gang) +11 more
core