Results 121 to 130 of about 1,488,769 (288)

High Barrier Height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal

, 1999
Copper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system.
C. Y. Chang, J. D. Guo, W. C. Lai, M. Yokoyama, S. H. Chan, J. S. Tsang, S. M. Sze   +6 more
core   +1 more source

Bioinspired Porphyrin‐Based Catalysts From Temporospatial Confined Frameworks for Ultrafast Removal of Sulfaclozine

Advanced Science, EarlyView.
We report the rational design of artificial photocatalysts with asymmetrically coordinated dual‐metal centers and a tailored microenvironment, broadly applicable strategy is established for the synthesis of multivariate zirconium‐based metal–organic frameworks, offering a platform for precisely tuning active‐site configurations to optimize ...
Yuxin Lu, Yu‐Hang Li, Zhiyi Sun, Fanke Tong, Zelin Li, Sheng Wang, Shangkun Pei, Yi Li, Xiyan Xu, Chong‐Chen Wang, Bo Wang, Xiang Li   +11 more
wiley   +1 more source

SCHOTTKY-BARRIER HEIGHT OF CRSI2-SI JUNCTIONS

, 1993
The Schottky barrier height of Cr-Si and CrSi2-Si junctions for both n-and p-type samples has been measured by using I-V, C-V and activation energy techniques in a temperature range of 170-300 K.
AKMAN, N, TURAN, R, Turan, Raşit
core   +1 more source

NbN Broadband Plasmonic Absorbers for Efficient Hot‐Carrier Injection Toward Improved Solar‐to‐Hydrogen Conversion

Advanced Science, EarlyView.
Niobium nitride (NbN) broadband plasmonic metasurface absorbers provide an efficient platform for solar‐energy conversion through hot‐carrier injection. Quasi‐epitaxial NbN features a low work function of 4.0 eV, reducing the interfacial injection barrier and facilitating charge transfer into adjacent photocatalysts.
Tzu‐Yu Peng, Tse‐Fu Huang, Takeshi Yamaguchi, Jia‐Wern Chen, Hsing‐Yu Kuo, Ying‐Rang Zhuang, Hung Wei Shiu, Seongmin Im, Yang Zhao, Takuo Tanaka, Ho‐Hsiu Chou, Yu‐Jung Lu   +11 more
wiley   +1 more source

Spintronic and plasmonic applications of electrodeposition on semiconductors

, 2009
In this thesis, metal electrodeposition on semiconductor substrates is investigated. We show that electrodeposition of metals on n-type Si and Ge is an excellent method to create Schottky barriers and that this method has a number of unique advantages ...
Li, X.
core   +1 more source

High‐Performance Violet Phosphorene‐Based Device via Tellurium Doping‐Induced Contact Resistance Reduction

Advanced Science, EarlyView.
Tellurium substitution for phosphorus in violet phosphorus significantly reduces contact resistance, enhancing FET performance under ambient conditions. ABSTRACT Two‐dimensional materials have attracted much attention in various research fields. The phosphorene structures with various allotropes, another type of elemental 2D materials after graphene ...
Zhuorui Wen, Xuewen Zhao, Wenju Zhou, Wenqi Mu, Rui Zhai, Jiazheng Lin, Xin Liu, Kerui Hu, Zhiqi Zhang, Guodong Meng, Yonghong Cheng, Huiyang Gou, Jinying Zhang   +12 more
wiley   +1 more source

Study of Schottky Barrier Height of Metals/Indium Selenide interface

, 2019
Metal-semiconductor contact is a key factor which affects the performance and stability of devices. Thus, improvement of metal contact is imperative in semiconductor devices design and fabrication.
Peng , Yu-Ting
core  

Gate Field‐Induced Dynamic Schottky Barrier Height Reduction in Bilayer MoS2 for Sub‐60 mV/dec Schottky Barrier FETs

Advanced Electronic Materials
Bilayer MoS2 exhibits bandgap narrowing under a vertical electric field due to inversion symmetry breaking, with the extent of reduction scaling proportionally with field strength. Leveraging this intrinsic property, this study investigates its impact on
Gyeong Min Seo, Jeong Wook Kim, Byoung Don Kong   +2 more
doaj   +1 more source

Cross‐scale Material‐Structure Synergy for 2D Metamaterials: Toward Customizable Intelligent Electromagnetic Manipulation in Multiphysics Fields

Advanced Science, EarlyView.
Recent advances in metasurface‐enabled low‐observable technologies are reviewed from the perspective of cross‐scale material–structure synergy. Electromagnetic, thermal, optical, and acoustic stealth are highlighted together with dynamic tuning, programmable coding, data‐driven inverse design, artificial intelligence, multispectral compatibility, and ...
Shuhao Wang, Xing Yang, Liping Liu, Yang Peng, Yangyang Wang, Hualiang Lv   +5 more
wiley   +1 more source

Grain‐Boundary‐Enriched Cocatalyst Coupled With CuSCN Hole Transport Layer for Efficient Solar Water Oxidation in BiVO4 Photoanode

Advanced Science, EarlyView.
A grain‐boundary‐enriched NiFe cocatalyst is coupled with a CuSCN hole transport layer on BiVO4 photoanodes. The integrated architecture promotes hole extraction, interfacial charge transfer, and surface OER kinetics, highlighting cocatalyst microstructure regulation as a complementary strategy to hole transport layer engineering. ABSTRACT Solar‐driven
Wei Zhao, Yaorong He, Xiao Wang, Lin Zhu, Tong Su, Yujie Zhou, Xiang Li, Peiyao Du, Xiaoquan Lu   +8 more
wiley   +1 more source