Results 141 to 150 of about 1,488,769 (288)

Highly Stable and Non‐Volatile Optoelectronic Synapses for Sensing, Memory, and Computing Enabled by a Deep‐Potential Floating Gate

Advanced Science, EarlyView.
A deep‐potential metal floating gate integrates electrical programming, optical partial erasure, and synaptic weight modulation in a MoS2/h‐BN/Au transistor. The device provides a 97.6 V memory window, retention beyond 3000 s, endurance over 1600 cycles, and reproducible operation after 200 days of ambient storage.
Shuo Lei, Shichen Zhang, Zhipeng Zheng, Miao Cai, Shun Tang, Xuguang Guo, Yiming Zhu   +6 more
wiley   +1 more source

Dual Randomness From Spatial and Temporal Variations in Stochastic Zinc Gallate Nanoclusters for PUF and TRNG Co‐Driven Image Generation

Advanced Science, EarlyView.
A dual‐randomness hardware platform is demonstrated by integrating PUF and TRNG functionalities into mixed‐ZGO nanoclusters. By leveraging spatial and temporal stochasticity, the mixed‐ZGO NCs device enables both unique identification and random signal generation.
Seungme Kang, Wangmyung Choi, Jueun Lee, Yeong Kwon Kim, Byung Chul Jang, Wonjun Shin, Hocheon Yoo   +6 more
wiley   +1 more source

Opposite Trap‐State Evolution Pathways Govern Endurance and Retention Failure in Amorphous Chalcogenide Memory

Advanced Science, EarlyView.
GeSbSe selector‐only memory devices are investigated through physical and electrical analyses to reveal opposite trap‐state evolution pathways governing reliability degradation. Endurance cycling drives Se migration, transitioning traps from deep to shallow states.
Byung Jun Lee, Won Hee Jeong, Min Kyu Yang, Gun Hwan Kim   +3 more
wiley   +1 more source

Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer

Advanced Electronic Materials, Volume 11, Issue 6, May 2025.
A versatile strategy is reported for fabricating multi‐dimensional heterojunctions with significantly improved charge transfer capability. By integrating Ag nanowires with a MoS2/ZnO heterojunction, a fourfold increase in surface photovoltage is achieved, reaching 200 mV under visible light illumination.
Anh Thi Nguyen, Jungyoon Cho, Malkeshkumar Patel, Duc Anh Vu, Jungeun Song, Dongseok Suh, Ambrose Seo, Joondong Kim, Dong‐Wook Kim   +8 more
wiley   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

Advanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj, Richard Schroedter, Thomas Mikolajick, André Heinzig   +3 more
wiley   +1 more source

Novel Optical Functionalities in Memristors

Advanced Electronic Materials, EarlyView.
We present a tunnel junction memristor with expanded optical functionalities enabled by the integration of an ultra‐thin CdS barrier and a top ITO electrode. UV illumination triggers a photovoltaic response that can sense the memristor state. At very low temperatures, the UV light generates a high injection of photocarriers and produces a volatile ...
Isabel Tenreiro, Víctor Rouco, Mariona Cabero, Henry Navarro, Javier del Valle, Iván K. Schuller, Alberto Rivera‐Calzada   +6 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Monolayer MoS₂ field effect transistor with low Schottky barrier height with ferromagnetic metal contacts. [PDF]

Sci Rep, 2019
Gupta S, Rortais F, Ohshima R, Ando Y, Endo T, Miyata Y, Shiraishi M.   +6 more
europepmc   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

Advanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

Exploiting Temperature Effects for Robust Control and Reference Circuits Using Thin‐Film Contact‐Controlled Transistors

Advanced Electronic Materials, EarlyView.
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink, Jean‐Charles Fustec, Olivier de Sagazan, Rogier Fransen, George Bairaktatis, Emmanuel Jacques, Radu A. Sporea   +6 more
wiley   +1 more source