Results 141 to 150 of about 8,512 (209)

Recent Developments and Challenges of Edge Termination Techniques for Vertical Diamond Schottky Barrier Diodes. [PDF]

Sensors (Basel)
Li G, Lin W, Liu S, Aileplanm Y, Du A, Li L.   +5 more
europepmc   +1 more source

Nanoscale Control of Carrier Transport in Monolayer Transition-Metal Dichalcogenide Double Heterostructures. [PDF]

Nano Lett
Tian J, Cheng G, Tan J, Butler S, Liang Y, Mao H, Ji J, Kim J, Yao N, Xie S.   +9 more
europepmc   +1 more source

Design and Optimization of AlGaN/AlN/GaN L‑SBD for Radiofrequency Applications. [PDF]

ACS Omega
Dudekula S, Jaiswal NK, Ebel T, Chowdam VP, Koo SM, Dhanaraj K.   +5 more
europepmc   +1 more source

Band Engineering and Structural-Geometrical Engineering in 2D/3D van der Waals Heterostructures for Advanced Photodetection and Intelligent Sensing. [PDF]

Nanomicro Lett
Yang M, Gong K, Cui Y, Liu S, Li G, Lin S.   +5 more
europepmc   +1 more source

Investigation of electrical transport mechanisms in an n-CdIn₂Se₄/Pt thin film Schottky diode fabricated by pulsed laser deposition. [PDF]

RSC Adv
Dhruv SD, Dudharejiya T, Sharko SA, Serokurova AI, Novitskii NN, Goroshko DL, Rayani P, Jangale J, Markna JH, Kataria B, Dhruv DK.   +10 more
europepmc   +1 more source

Bi₂Se₃/n-Si Schottky Junctions for Near-Infrared Photodetectors. [PDF]

Nanomaterials (Basel)
Salvato M, Ciciotti R, Pierucci F, Scagliotti M, Rapisarda M, Vecchione A, Guarino A, Crivellari M, Castrucci P.   +8 more
europepmc   +1 more source

ZnO Doping-Induced Performance Boost in Co₂TiO₄/n-Si Schottky Self-Powered Photodetectors. [PDF]

ACS Omega
Hussaini AA, Sarilmaz A, Ozel F, Erdal MO, Yildirim M.   +4 more
europepmc   +1 more source

Sustainable Manufacturing of Fully Printed Zn/ZnO/CNT Schottky Diodes on Kraft Paper. [PDF]

ACS Appl Electron Mater
Bertoldo LHT, Ozório M, Vieira DH, Morais RM, Rollo A, Kettle J, Alves N.   +6 more
europepmc   +1 more source

Enabling state-of-the-art sensitivity of patch-antenna-coupled TeraFETs for the >1-THz frequency band using superstrate lenses

Holstein J, But DB, Krysl A, Lisauskas A, Roskos HG.   +4 more
europepmc   +1 more source

Barrier height homogeneity for 4.5 kV 4H-SiC Schottky diodes

Superlattices and Microstructures, 2006
International audience4.5 kV SiC Schottky diodes have been fabricated using Ni as the Schottky contact. A manufacturing yield of 40% is reached for the bigger area diodes (1.6 x 1.6 mm(2)) and of 70% for the smaller ones (0.4 x 0.4 mm(2)).
Jean Marie Bluet, Josep Montserrat, P Godignon   +2 more
exaly   +2 more sources