Results 161 to 170 of about 8,512 (209)
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Fluctuations of the Au-Si(100) Schottky barrier height
Physical Review Letters, 1993Schottky barrier height fluctuations of Au films on Si(100) are directly imaged with nm-scale resolution by ballistic electron emission. Fluctuations are made visible by using a highly doped (N d ≃10 17 cm -3 ) substrate. Randomly distributed (approximately 10 -3 cm -2 ) spots (about 2 nm in diameter) of reduced barrier height (typical ΔΦ=20-50 meV ...
, Palm, , Arbes, , Schulz
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Microstructure and Schottky-barrier height of the Yb/GaAs interface
Physical Review B, 1989Different interfacial structures are found for Yb/GaAs(001) contacts with different Yb thicknesses, namely 3 and 20 A\r{}, by grazing-incidence x-ray diffraction with the use of synchrotron radiation. Different Schottky-barrier height values are also found for these samples.
, Hirose +5 more
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Schottky barrier height enhancement on n-In0.53Ga0.47As
Journal of Applied Physics, 1992Schottky barrier height enhancement on n-InGaAs is studied on structures with thin surface layers of different compositions. Counter-doped p+-InGaAs layers, as well as layers of n- and p-InP, n-GaAs, and n-InGaP of different thicknesses and dopant densities, respectively, were used to enhance the barrier. Titanium was used as a barrier metal to prepare
Kordoš, P. +3 more
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Schottky barrier height modulation using dopant segregation in schottky-barrier SOI-MOSFETs
Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005., 2005The effect of dopant segregation (DS) on the electrical behavior of silicon-on-insulator Schottky barrier MOSFETs (SB-MOSFETs) is investigated. Ion implantation with arsenic and boron and subsequent silicidation is used to create highly n- and p-doped interface layers at the silicide-silicon interface.
M. Zhang +5 more
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Barrier Height of Titanium Silicide Schottky Barrier Diodes
Japanese Journal of Applied Physics, 1986Schottky barrier diodes were fabricated on n-type Si surfaces with high resistivity. Barriers were produced by TiSi or TiSi2. Barrier height and resistivity of titanium silicide were examined in relation to phase differences identified by X-ray diffraction analysis. Barrier height was found to be unaffected by silicide phase.
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Schottky Barrier Height in Fe/GaAs Films
IEEE Transactions on Magnetics, 2010We discuss the effect of annealing on the interfacial structure of Fe/GaAs films, with 2 × 4 surface reconstructions, and the subsequent effect on the Schottky barrier height. Images of the interfaces indicate that the annealing process can greatly reduce the level of atomic mixing. A study of the I-V characteristics of Fe/GaAs Schottky barrier diodes,
L. R. Fleet +7 more
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Metal/n-GaP Schottky barrier heights
Solid-State Electronics, 1979Abstract A systematic study, which aims to extend the existing metal/n-Gap Schottky barrier height data, is made. Schottky diodes of various barriers, which included Pt/n-GaP, Au/n-GaP, Ni/n-GaP, Mo/n-Gap, Al/n-GaP, Cr/n-GaP, Ag/n-GaP and Cu/n-GaP, were fabricated and their I-V and C-V characteristics were measured.
Tan F. Lei, Chung L. Lee, Chun Y. Chang
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Interface states and the barrier height of Schottky diodes
Physics Letters A, 1993Abstract The interface states at metal-semiconductor junctions are still a matter of debate. We present a novel approach to this issue that uses state-of-the-art techniques to prepare silicon surfaces with different surface terminations and employs non-interacting Schottky contacts to measure the barrier height.
M. Wittmer, J.L. Freeouf
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Temperature dependence of Schottky barrier heights on silicon
Journal of Applied Physics, 1993We investigate the temperature dependence of Schottky barrier heights on silicon. The analysis of a large variety of polycrystalline diodes shows that the temperature coefficient of the barrier height depends on the chemical nature of the metal. This observation is in contradiction with models suggesting Fermi-level pinning at the center of the ...
Jürgen H. Werner, Herbert H. Güttler
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A reliable Schottky barrier height extraction procedure
2016 International Conference on Microelectronic Test Structures (ICMTS), 2016This work proposes a Schottky barrier extraction procedure which considers the thermionic field emission (TFE) model, image-force induced barrier lowering effect, and parasitic resistance. The accuracy of the Schottky barrier height extracted by the field emission (FE) model at forward bias and the TFE model at reverse bias is evaluated.
Bing-Yue Tsui, Tze-Yu Fu
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