Results 181 to 190 of about 1,488,769 (288)
Janus VSSi as an efficient 2D electrode for Sb<sub>2</sub>C<sub>3</sub> with tunable Schottky contact: a first-principles study. [PDF]
Dan HK +5 more
europepmc +1 more source
Centered on the multiscale meniscus, this review dissects mass transport in meniscus‐guided coating into parallel and lateral components. By analyzing the balance of multiple factors during crystallization, it establishes a clear morphology‐performance relationship.
Yumeng Wang +7 more
wiley +1 more source
A robust high-performance H<sub>2</sub>S sensor enabling real-world wireless monitoring. [PDF]
Wang W +16 more
europepmc +1 more source
A Schottky photodiode based on (Al0.14Ga0.86)2O3 was developed, in which the sensing and processing functions were temporally decoupled through bias voltage modulation. By integrating single‐pixel imaging with a reservoir computing architecture, a comprehensive intelligent vision system was constructed.
Hongbin Wang +10 more
wiley +1 more source
Effect of Exchange-Correlation Functionals on Schottky Barriers at Si/Metal Interfaces. [PDF]
Dovale-Farelo V, Choudhary K.
europepmc +1 more source
Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing. [PDF]
Fu C +8 more
europepmc +1 more source
This review provides a comprehensive perspective on p‐doping in two‐dimensional transition metal dichalcogenides, linking the origins of carrier polarity, doping mechanisms, verification methodologies, and device‐level impacts. By establishing correlations among atomic‐scale doping, carrier modulation, and device functionality, it offers practical ...
Seo Yeon Han +4 more
wiley +1 more source
Deep Learning to Automate Parameter Extraction and Model Fitting of Two-Dimensional Transistors. [PDF]
Bennett RKA +10 more
europepmc +1 more source
This study presents a photodetector based on atomically thin MoS2 on an InP substrate, forming an n‐MoS2/p‐InP type‐II staggered heterojunction. The device exhibits excellent rectifying properties with an ideality factor of 1.57 and achieves a peak photoresponsivity of 960 mA W−1, while MoS2 provides stable passivation for InP. III–V semiconductors are
Dong Hwi Choi +8 more
wiley +1 more source
Schottky Barrier as Photodetector Based on Nanostructured Cd <sub><i>x</i></sub> Zn<sub>1-<i>x</i></sub> S along with Switchable Photocurrent Generation. [PDF]
Das P, Saha S, Bhunia AK.
europepmc +1 more source

