Results 171 to 180 of about 8,512 (209)

A novel Schottky diode with controlled barrier height

IEEE Transactions on Electron Devices, 1979
In x Ga 1-x As Schottky diodes are fabricated, and the current sensitivity and conversion loss are measured. Although the present result is preliminary, it supports the previous theoretical prediction of the optimization of the Schottky barrier height (φ = 0.3 V).
K. Kajiyama, M. Ida, S. Sakata, Y. Mizushima   +3 more
openaire   +1 more source

Optimal barrier height for Schottky diode rectifiers

International Journal of Electronics, 1984
An elementary analysis reveals that an optimal barrier height exits for a Schottky barrier diode used as a rectifier. Techniques available to modify the Schottky barrier can be readily applied to achieve the desired barrier height.
openaire   +1 more source

Schottky Barrier Heights of PT Silicides on SiGe

MRS Proceedings, 1993
ABSTRACTSilicide/SiGe Schottky barriers are of importance for applications in infrared detectors and SiGe contacts, as well as for fundamental studies of metal-semiconductor interfaces. We have fabricated silicide/SiGe Schottky diodes by the reaction of evaporated Pt and Ir films on p-SiGe alloys with a thin Si capping layer.
J.R. Jimenez, X. Xiao, J.C. Sturm, P.W. Pellegrini, M. Chi   +4 more
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Schottky Barrier Heights and the Continuum of Gap States

Physical Review Letters, 1984
Simple physical considerations of local charge neutrality suggest that near a metal-semiconductor interface, the Fermi level in the semiconductor is pinned near an effective gap center, which is simply related to the bulk semiconductor band structure. In this way “canonical” Schottky barrier heights are calculated for several semiconductors.
openaire   +1 more source

On the Schottky barrier height of metal-GaAs systems

Physica Status Solidi (a), 1972
G. B. Seiranyan, Yu. A. Tkhorik
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Barrier height modification in Schottky MIS diodes

Physics Letters A, 1982
Abstract Expressions for the potential barrier height of Schottky MIS diodes having gaussian doping profiles are derived and solved numerically both at thermal equilibrium and in the presence of applied voltages. The possibility of barrier height modification using a thin highly doped surface layer is discussed.
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Schottky Barrier Heights of Refractory Metals on Silicon

MRS Proceedings, 1986
AbstractMeasurements of Schottky-barrier heights in the temperature range 175-295 K for refractory metal-silicon and corresponding silicide-silicon interfaces are presented. Refractory metal silicide formation is shown to have only a small effect on the barrier height.
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Reduction of Fermi-Level Pinning and Controlling of Ni/β-Ga2O3 Schottky Barrier Height Using an Ultrathin HfO2 Interlayer

ACS Applied Electronic Materials, 2023
Madani Labed, Nouredine Sengouga, Chowdam Venkata Prasad   +2 more
exaly  

On the enhancement of effective barrier height in Schottky barrier diodes

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1996
S. Arulkumaran, J. Arokiaraj, N. Dharmarasu, J. Kumar   +3 more
openaire   +1 more source

Comments on "Schottky-barrier devices with low barrier height"

Proceedings of the IEEE, 1975
A.C. MacPherson, H.M. Day, K. Kajiyama, S. Sakata, Y. Mizushima   +4 more
openaire   +1 more source