Results 171 to 180 of about 1,488,769 (288)

Gas–Solid Interface‐Assisted Growth of Organic Semiconductor Single Crystals: Dimensions, Structures, Mechanisms, and Applications

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Gas–solid interface‐assisted growth strategies have unlocked precise control over crystal structure, morphology, dimension, and molecular packing. The obtained organic semiconductor single crystals represent the ideal candidates for high‐performance organic optoelectronic devices.
Tingyi Yan, Qing Tian, Jinwen Wang, Ke Jiang, Yage Han, Yuanzhuang Ren, Lingyun Li, Xiujuan Zhang, Jiansheng Jie   +8 more
wiley   +1 more source

Comparison of inhomogeneous Schottky barrier modeling approaches in SiC polytypes. [PDF]

PLoS One
Mekaret F, Rabehi A, Zebentout B, Tizi S, Douara A, Guermoui M, Tibermacine IE, Alharbi AH, El-Kenawy EM, Habib M, Benamara Z.   +10 more
europepmc   +1 more source

Transparent and Photovoltaic Water–Semiconductor Interface for Ultra‐Low‐Light Omnidirectional Photodetection

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
A self‐powered photodetector using a static water–ZnO interface forms a Schottky‐like photovoltaic junction for ultra‐low‐light sensing. It delivers strong photoresponse, 360° detection, and flexibility, advancing transparent and sustainable water‐based optoelectronics.
Sanh Vo Thi, Malkeshkumar Patel, Sourov Hossain, Md Arifur Rahman Barno, Ngoc Le Trinh, Han‐Bo‐Ram Lee, Yu Kwon Kim, Joondong Kim   +7 more
wiley   +1 more source

Dynamically manipulated interface polarization via symmetry engineering for self-gated electronics. [PDF]

Sci Adv
Zhang Z, Xu L, Wang G, He Y, Liu S, An C, Chen L, Wang L, Wang ZL.   +8 more
europepmc   +1 more source

ZnO Nanowires by Chemical Bath Deposition: A Review on Doping and Functional Devices

Electron, EarlyView.
This review reports the most recent and well‐established state‐of‐the‐art and scientific challenges related to the doping of ZnO nanowires by chemical bath deposition, encompassing native point and hydrogen‐related defects, as well as extrinsic dopants.
Clément Lausecker, Adrien Baillard, Estelle Appert, Vincent Consonni   +3 more
wiley   +1 more source

Localized States' Role in MoS₂ Few-Layer Device: A Study by Schottky Capacitance Spectroscopy and Thermally Stimulated Current. [PDF]

ACS Omega
Gouveia RC, Cichetto L, Ferreira de Almeida L, Teodoro MD, Chiquito AJ.   +4 more
europepmc   +1 more source

Reconfigurable Logic Operation of MoTe2 Homojunction Enabled by Staggered Double‐Sided Contacts

Electron, EarlyView.
A gap adjacent to an electrode in the MoTe2 SDC transistor enables polarity reconfiguration, switching between p‐type and n‐type depending on bias polarity. This reconfiguration is ensured when the absolute bias voltage is less than the gate voltage, yielding a near‐ideal subthreshold swing of 67.6 mV/dec and on/off ratios of 104–106.
Jun‐Qiang Zhang, Jia‐Yi Zhang, Jiong‐Tao Zhang, Xu Zeng, Yuntian Wu, Lili He, Xiangyu Hou, Xiaoguang Luo   +7 more
wiley   +1 more source

Borophene‐based sensing platforms: Pioneering ultrasensitive detection

FlexMat, EarlyView.
Schematic Diagram of Performance Optimization Strategies and Sensing Application Characteristics of Two‐Dimensional Boron‐Based Materials in Novel Sensors. Abstract Borophene is an emerging two‐dimensional (2D) material. Since significant breakthroughs were achieved in the experimental synthesis of borophene, the exploration and development of ...
Chi Yuan, Yanpeng Ji, Yi Liu, Guoan Tai
wiley   +1 more source

Improved DC Characteristic Modeling and Small-Signal Investigation of GaN Schottky Barrier Diodes. [PDF]

Micromachines (Basel)
Wang C, Tang L, Zhang A, Cheng J, Li C, Mao S, Xu Y, He Q, Guo T, Wang K, Wu C.   +10 more
europepmc   +1 more source

PbS colloidal quantum dots imagers: From single devices to arrays, flexible platforms, and CMOS‐integrated systems

FlexMat, EarlyView.
Abstract Imagers operating in the visible to near‐infrared (NIR) range play an important role in applications such as industrial sorting, security surveillance, and autonomous driving. However, conventional imaging technologies based on silicon and III–V semiconductors suffer from several limits, including restricted spectral range, high fabrication ...
Xin Hong, Songdi Zhang, Runtian Han, Peng Wang, Wenjie Deng   +4 more
wiley   +1 more source