Results 151 to 160 of about 8,512 (209)

Reduction of the Schottky barrier height on silicon carbide using Au nano-particles

Solid-State Electronics, 2002
By the incorporation of size-selected Au nano-particles in Ti Schottky contacts on silicon carbide, we could observe considerably lower the barrier height of the contacts.
Carl Mikael Zetterling, Mikael Östling, Martin H Magnússon   +2 more
exaly   +3 more sources

Schottky-barrier devices with low barrier height

Proceedings of the IEEE, 1974
It is calculated that the barrier height of the Schottky diode has an optimum value of ∼0.3 V for the detector, the harmonic generator, and the frequency converter at high frequency. The low barrier height can be realized by the mixed crystal (n-type) composed of InAs (i.e., In x Ga 1-x As,InAs y P 1-y , and In x Ga 1-x As y P 1-y ).
K. Kajiyama, S. Sakata, Y. Mizushima
openaire   +1 more source

Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights

Journal of Applied Physics, 1987
A technique for fabricating controlled Schottky barrier heights to GaAs over the entire band gap is demonstrated. Thin, highly doped semiconductor layers at the metal-semiconductor interface allowed the reproducible control of the effective barrier height on n-type GaAs from near zero (i.e., ohmic behavior at 300 K) to 1.33 eV (the band gap equals 1.43
S. J. Eglash, N. Newman, S. Pan, D. Mo, K. Shenai, W. E. Spicer, F. A. Ponce, D. M. Collins   +7 more
openaire   +1 more source

Natural nonuniformities in the height of a Schottky barrier

Semiconductors, 1998
This paper discusses natural nonuniformities in the height of a Schottky barrier caused by the discreteness of impurity charges randomly distributed in the depletion region. The parallel-diode model is used to show that these natural fluctuations in the effective barrier height at a metal-semiconductor junction, on the average, do not exceed kT at room
V. B. Bondarenko, Yu. A. Kudinov, S. G. Ershov, V. V. Korablev   +3 more
openaire   +1 more source

Schottky Barrier Height of Phosphidized InGaAs

Japanese Journal of Applied Physics, 1993
The Schottky barrier height of phosphidized InGaAs has been studied. The surface of InGaAs (In 53%) lattice-matched to InP is treated with gentle phosphine plasma. Schottky junctions are then formed on phosphidized InGaAs by evaporating various metals such as Au, Cu, Ti and Ag.
Takashi Sugino, Yoshifumi Sakamoto Yoshifumi Sakamoto, Junji Shirafuji Junji Shirafuji   +2 more
openaire   +1 more source

CESIUM-GaAs SCHOTTKY BARRIER HEIGHT

Applied Physics Letters, 1967
The Schottky barrier height at the interface of cesium metal and vacuum-cleaved p-type GaAs has been found to be 0.63 ± 0.03 eV. These measurements were made photovoltaically at 80°K and indicate that a heavy coverage of cesium leaves the surface roughly intrinsic.
John J. Uebbing, Ronald L. Bell
openaire   +1 more source

Fluctuations in Schottky barrier heights

Journal of Applied Physics, 1984
A double Schottky barrier is often formed at the grain boundary in polycrystalline semiconductors. The barrier height is shown to fluctuate in value due to the random nature of the impurity positions. The magnitude of the fluctuations is 0.1 eV, and the fluctuations cause the barrier height measured by capacitance to differ from the one measured by ...
openaire   +1 more source

Barrier heights of GaN Schottky contacts

Applied Surface Science, 1997
Abstract Silver and lead contacts prepared by evaporation onto clean n-GaN(0001) surfaces are rectifying. Their zero-bias barrier heights and ideality factors were determined from the current-voltage characteristics. The observed linear correlation between the barrier heights and the ideality factors is attributed to nonuniform distributions of ...
Thorsten U. Kampen, Winfried Mönch
openaire   +1 more source

Schottky-barrier height of iridium silicide

Applied Physics Letters, 1978
Iridium silicides have been prepared by annealing Ir films on (100) - and (111) -oriented Si from 300 to 500 °C. Phase identification was performed by both x-ray and electron diffractions, and Schottky-barrier height by current-voltage measurements. The silicide IrSi has been found to have a barrier height of 0.93 eV, which is the highest among all the
I. Ohdomari, K. N. Tu, F. M. d’Heurle, T. S. Kuan, S. Petersson   +4 more
openaire   +1 more source

Optimum barrier height for Schottky-barrier detectors

Journal of Physics D: Applied Physics, 1982
Performance characteristics of Schottky-barrier detectors are investigated in terms of their physical parameters. It is shown that the detector cut-off frequency and responsivity-bandwidth product can be maximised while the level of minimum detectable power can be minimised by the proper choice of detector parameters.
openaire   +1 more source