First-Principles Study of Biaxial Strain Effects on Schottky Barrier Modulation in Graphene/ZnSe Heterostructures. [PDF]
Pang G, Wen X, Zhang L, Huang Y.
europepmc +1 more source
Multiscale Modeling of the RESET Sweep in a Single-Layer MoS<sub>2</sub> Atomristor Using Density Functional Theory. [PDF]
Turfanda A, Gagliardi A.
europepmc +1 more source
Investigation of Electrical Behavior of Au/Ti/AlN/Si Schottky Diode via Gaussian Distribution Barrier Modeling. [PDF]
Karaca A, Yıldız DE, Tataroğlu A.
europepmc +1 more source
Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. [PDF]
Pu T, Li X, Li L, Ao JP.
europepmc +1 more source
MXene alloy-based metal-semiconductor contact for low-resistive field-effect transistors. [PDF]
Bera S, Kaushik D, Kumar H.
europepmc +1 more source
Thermionic emission conduction in Mo AlGaN/GaN diodes in the presence of Schottky barrier inhomogeneities. [PDF]
Milazzo S +4 more
europepmc +1 more source
Electrical Properties of ZnO Nanoparticle-Embedded/Polyethylenimine-Functionalized Nitrogen-Doped Graphene Quantum Dot Nanocomposites. [PDF]
Yıldız İ.
europepmc +1 more source
Electrical Contacts to MoS<sub>2</sub> with Covellite (CuS): The Contact Type and Schottky Barrier Modulation. [PDF]
Huai MJ +5 more
europepmc +1 more source
A high-frequency silicon-graphene-germanium barristor. [PDF]
Wang X +20 more
europepmc +1 more source
Silicon Nanowire-Based Schottky Diodes for Enhanced Temperature Sensing and Extended Operable Range. [PDF]
Pristavu G +7 more
europepmc +1 more source

