Results 131 to 140 of about 1,488,769 (288)
The External Electric Field-Induced Tunability of the Schottky Barrier Height in Graphene/AlN Interface: A Study by First-Principles. [PDF]
Nanomaterials (Basel), 2020 Liu X, Zhang Z, Lv B, Ding Z, Luo Z.
europepmc +1 more source
Advanced Science, EarlyView.In this work, we present a bile‐based memristor hardware framework that enables direct, label‐free identification of cholelithiasis and gallbladder cancer at the device level. The Ag/bile/FTO memristor features stable resistive switching and disease‐specific electrical responses, providing a conceptual foundation for circuits and an integrated ERCP ...
Junming Zhu +17 more
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IEEE Journal of the Electron Devices SocietyThe ballistic transport behaviors of SOI nMOSFETs with NiSi metal source/drain (S/D) have been investigated. It is found that the suppression of Schottky barrier height for holes results in an improvement of carrier injection velocity (vinj ...
Rui Su +9 more
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Analysis of barrier height inhomogeneities in Al-pSnSe Schottky diode
, 2012 The fabrication of Al-pSnSe Schottky diodes and the temperature dependence of I-V characteristics in the temperature range 60
K.D. Patel, C.K. Sumesh
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Advanced Science, EarlyView.We develop a ligand engineering strategy to construct Ni‐diketimine‐linked COFs with precisely tuned Ni electronic states. By varying the coordinated diketone units, we achieve an optimal electronic configuration that enhances O2 adsorption and lowers the energy barrier for •O2− generation.
Guihong Wu +5 more
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Influence of the semi-insulating GaAs Schottky pad on the Schottky barrier in the active layer
, 1996 The influence of the sidegate voltage on the Schottky barrier in the ion-implanted active layer via the Schottky pad on the semi-insulating GaAs substrate was observed, and the mechanism for such an influence was proposed.
Wu J +6 more
core
Two‐Dimensional Flash Memory: Materials, Interfaces, and Storage–Computing Convergence
Advanced Science, EarlyView.We systematically summarize recent advances in 2D flash memory, highlighting how interface and material engineering can overcome the conventional trade‐offs among speed, power consumption, and reliability in silicon‐based flash, and outlining its potential for high‐performance memory and in‐memory computing applications.
Zhiyuan Wang +10 more
wiley +1 more source
Gaussian distribution of inhomogeneous barrier height in Au/n-GaP (100) Schottky barrier diodes
, 2014 The current voltage (I-V) measurements of Au/n-GaP Schottky barrier diodes (SBD) were carried out in the temperature range of 80-375 K. The values of zero-bias barrier height (phi(B0)) and ideality factor (n) ranged from 0.29 eV and 3.85 (80K) to 0.82 eV
Özer, Metin, Güzel, Tamer
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IEEE Photonics JournalDetection of photons with energy below the bandgap or Schottky barrier height of silicon has been limited in the past. Here, we reveal an approach that harnesses hot carriers through diffusion over a very thin metal to achieve silicon-based mid-infrared ...
Zih-Chun Su, Yao-Han Dong, Ching-Fuh Lin
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Acoustically Activatable Drug‐Loaded Nanodroplets for Mechanochemical Therapy in Solid Tumors
Advanced Science, EarlyView.Microfluidically fabricated drug‐loaded nanodroplets are sequentially activated by dual‐frequency ultrasound through acoustic droplet vaporization followed by bubble collapse, enabling spatially controlled drug release and mechanical tumor fractionation, resulting in synergistic mechanochemotherapy and prolonged survival.
Tiran Bercovici +4 more
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