Results 71 to 80 of about 8,512 (209)

An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors

, 2009
The gain mechanism in GaN Schottky barrier ultraviolet photodetectors is investigated by focused light beam. When the incident light illuminates the central region of the Schottky contact electrode, the responsivity changes very little with the increase ...
Yang H, Zhao DG, Zhu JJ, Wang H, Zhang SM, Jiang DS, Liu ZS, Zhao DG Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn   +7 more
core  

Effect of Schottky barrier height on EL2 measurement by deep-level transient spectroscopy

, 1988
A systematic study of EL2 midgap trap in GaAs using deep-level transient spectroscopy (DLTS) is reported for contacts having a large range of Schottky barrier height. The results show that the DLTS signal of EL2 increases as the barrier height rises from
Ma, QY, E. S. Yang, X. Wu, Q. Y. Ma, Wu, X, Yang, ES, H. L. Evans, Evans, HL, M. T. Schmidt, Schmidt, MT   +9 more
core   +1 more source

Schottky infrared detectors with optically tunable barriers beyond the internal photoemission limit

The Innovation
Internal photoemission is a prominent branch of the photoelectric effect and has emerged as a viable method for detecting photons with energies below the semiconductor bandgap.
Jintao Fu, Zhongmin Guo, Changbin Nie, Feiying Sun, Genglin Li, Shuanglong Feng, Xingzhan Wei   +6 more
doaj   +1 more source

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

Beilstein Journal of Nanotechnology, 2016
A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere.
Ivan Shtepliuk, Jens Eriksson, Volodymyr Khranovskyy, Tihomir Iakimov, Anita Lloyd Spetz, Rositsa Yakimova   +5 more
doaj   +1 more source

Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019
In order to determine the temperature dependence of the reverse transition voltage between thermionic emission and tunneling mechanisms, a numerical method has been applied for β-Ga2O3 Schottky barrier diodes. The main idea of this method is based on the
A. Latreche
doaj   +1 more source

A Novel 183GHz Subharmonic Schottky Diode Mixer

, 1992
PhDThe technique of microwave . limb sounding -from space represents a very powerful tool for determining the atmospheric processes involved in ozone depletion, the greenhouse effect, acid rain, etc..
Mann, Christopher Mark
core  

Schottky barrier height engineering on MoS₂ field-effect transistors using a polymer surface modifier on a contact electrode. [PDF]

Discov Nano, 2023
Choi D, Jeon J, Park TE, Ju BK, Lee KY.
europepmc   +1 more source

Study of Schottky Barrier Height of Metals/Indium Selenide interface

, 2019
Metal-semiconductor contact is a key factor which affects the performance and stability of devices. Thus, improvement of metal contact is imperative in semiconductor devices design and fabrication.
Peng , Yu-Ting
core  

Schottky-barrier height tuning using dopant segregation in Schottky-barrier MOSFETs on fully-depleted SOI

, 2006
In this paper we demonstrate the use of dopant segregation during silicidation for decreasing the effective potential barrier height in Schottky-barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs). N-type as well as p-type devices are
Min Zhang, Siegfried Mantl, Joachim Knoch, Knoch, J., Zhao, Q. T., Qing-Tai Zhao, Zhang, M., Mantl, S., Zhao, Q.-T.   +8 more
core   +1 more source

Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes

AIP Advances, 2015
This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode characteristics by the introduction of a layer of HfO2 (5 nm) between the metal and semiconductor interface.
Arjun Shetty, Basanta Roul, Shruti Mukundan, Lokesh Mohan, Greeshma Chandan, K. J. Vinoy, S. B. Krupanidhi   +6 more
doaj   +1 more source