Results 71 to 80 of about 1,488,769 (288)
Impact of doping on the performance of p-type Be-doped Al0.29 Ga0.71As Schottky diodes [PDF]
The effects of changing the acceptors concentration on the electrical characteristics of Au/Ti on Be-doped Al0.29Ga0.71As Schottky contact have been investigated in the temperature range of 100–400 K.
Henini, M.
core +1 more source
Advanced Materials, EarlyView.Inorganic compound‐modified separators transform lithium–sulfur batteries from passive polysulfide confinement to active reaction‐pathway regulation. A Practical Relevance Index (PRI)‐guided framework bridges interfacial chemistry of inorganic separators with practical constraints, establishing unified design principles for scalable, high‐energy ...
Yuting Qin +7 more
wiley +1 more source
Nanoscale Research Letters, 2019 We studied the reverse current emission mechanism of the Mo/β-Ga2O3 Schottky barrier diode through the temperature-dependent current-voltage (I-V) characteristics from 298 to 423 K.
Zhuangzhuang Hu +10 more
doaj +1 more source
Solution-Processed Multi-Junction Optoelectronic Synapses for Mode-Switchable SWIR Neuromorphic Vision Sensing. [PDF]
Adv Sci (Weinh)A novel bias‐programmable shortwave infrared (SWIR) vision sensor is developed using multi‐junction colloidal quantum dots (QDs). Under varying applied voltage, the back‐to‐back rectifying junctions effectively tune trapping centers to switch the device between high‐speed photodetector and persistent synapse modes.
He Z +6 more
europepmc +2 more sources
Engineering Slow-Carrier Interfacial Recombination Enables Tailored Spectral Response. [PDF]
Adv Sci (Weinh)This work demonstrates that weak‐drift slow carriers are preferentially captured at generic semiconductor surfaces/interfaces and recombine. This process is manipulated to achieve tailored spectral response. A tens of µm‐wide depletion region is created to observe surface collection rates for photocarriers generated at different positions.
Zhang Y +5 more
europepmc +2 more sources
Advanced Materials, EarlyView.Our work introduces a new framework that fundamentally changes how orientation in bismuth oxyhalide systems is approached. Comprehensive experiments, backed by theoretical models, reveal the pivotal role of halide anions to modify the van der Waals stacking energies required to direct orientation. Our method enables the fabrication of near perfect (001)
Gabriel Aygur +10 more
wiley +1 more source
Barrier height inhomogeneities in InN/GaN heterostructure based Schottky junctions
, 2011 The electrical transport properties of InN/GaN heterostructure based Schottky junctions were studied over a wide temperature range of 200-500 K. The barrier height and the ideality factor were calculated from current-voltage (I-V) characteristics based ...
Krupanidhi, SB +13 more
core +1 more source
Volatile Memristive Devices With Tunable Temporal Dynamics For Event‐Based Sensing
Advanced Materials, EarlyView.Tunable volatile memristive devices can serve various neural‐inspired tasks that require different time windows of information retention. The ionic‐based volatility of the presented Pt/a‐STO/TaOx/Ta device stack can be reproducibly and controllably tuned in multiple ways.
Dimitrios Spithouris +7 more
wiley +1 more source
, 2019 Attempts to model the current through Schottky barrier diodes using the two fundamental mechanisms of thermionic emission and tunnelling are adversely impacted by defects and second order effects.
Nicholls, Jordan +3 more
core +1 more source
Computation‐Less, Bias‐Free, and Ultra‐Broadband Photodetector for On‐Chip Edge Extraction
Advanced Materials, EarlyView.A computation‐less, bias‐free, and ultra‐broadband photodetector directly converts local optical‐intensity gradients into signed photocurrents through a position‐dependent bi‐directional photoresponse. This intrinsic physical sensing mechanism enables single‐pixel edge extraction from the near‐infrared to the long‐wave infrared at room temperature ...
Jintao Fu +8 more
wiley +1 more source