Results 41 to 50 of about 5,171 (275)
Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities
Advanced Materials, EarlyView.This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen +7 more
wiley +1 more source
Schottky-Barrier FET Ultra-Low-Power Diode
, 2020 In this paper, for the first time, we apply the ultra-low-power (ULP) diode concept with Schottky Barrier (SB) transistors and analyze the performance in comparison to standard CMOS, using calibrated TCAD mixed-mode simulations.
Koes, Alexander +3 more
core +1 more source
In Situ Regenerative Adduct Assisted p‐Type Doping of Organic Semiconductor
Advanced Materials, EarlyView.An in situ regenerative adduct‐assisted (IRAA) doping strategy is introduced for p‐type doping of organic semiconductors. A regenerating adduct serves as the dopant, enabling highly efficient doping with a choice of counterions. The generality of this approach provides a scalable route to dope a wide range of hole‐transport materials with high thermal ...
Brijesh K. Patel +8 more
wiley +1 more source
Analysis of Punch-Through Breakdown Voltages in 3C-Sic Schottky Barrier Diode Using Gaussian Profile for 200µm Thick Wafer [PDF]
, 2020 : The punch through breakdown voltage of 3C-SiC Schottky Barrier Diode has been analysed in this paper using Gaussian profile. It is observed that 3C-SiC Schottky barrier diode yield high punch through breakdown voltage with higher values of peak doping ...
A K Chatterjee, Pratibha Nishad
core +1 more source
Advanced Materials Interfaces, EarlyView.Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci +12 more
wiley +1 more source
Graphenic Carbon: A Novel Material to Improve the Reliability of Metal-Silicon Contacts
IEEE Journal of the Electron Devices Society, 2017 Contact resistance and thermal degradation of metal-silicon contacts are major challenges in nanoscale CMOS as well as in power device applications. Titanium silicide (TiSi) is commonly used to establish low-barrier height contacts to silicon, in state ...
Max Stelzer, Moritz Jung, Franz Kreupl
doaj +1 more source
High barrier Schottky diode with organic interlayer
, 2012 A new Cu/n-InP Schottky junction with organic dye (PSP) interlayer has been formed by using a solution cast process. An effective barrier height as high as 0.82 eV has been achieved for Cu/PSP/n-InP Schottky diodes, which have good current-voltage (I-V ...
AYDOĞAN, Şakir +5 more
core +1 more source
Advances in Halide Perovskites for Photon Radiation Detectors
Advanced Materials Technologies, EarlyView.This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang +3 more
wiley +1 more source
Record Performance in Vertically Stacked, Solution‐Processed ZTO Schottky Diodes
Advanced Materials Technologies, EarlyView.Schottky diodes based on solution processed sustainable zinc—tin–oxide thin films present an eco‐friendly and versatile alternative to conventional CMOS based technologies. Beyond state‐of‐the‐art performance for vertically stacked solution‐based oxide diodes was achieved, including rectification ratios exceeding nine orders of magnitude, and intrinsic
Carlos Silva +10 more
wiley +1 more source
Reciprocity in silicon Schottky-barrier diodes
Electronics Letters, 1967 Reciprocity has been examined at X band for low-noise silicon Schottky-barrier diodes by measuring the forward (r.f. to i.f.) and reverse (i.f. to r.f.) conversion losses by the heterodyne method. Reciprocity held for the silicon Schottky-barrier diodes, proving that their low conversion-loss behaviour is due to the nonlinear barrier resistance and not
Y. Anand, W.E. Doherty
openaire +1 more source