Results 41 to 50 of about 2,560 (228)
Grafted Low‐Leakage Si/AlN p‐n Diodes Enabled by Fluorinated AlN Interface
Advanced Materials Interfaces, EarlyView.This work demonstrates a fluorination‐based interface engineering strategy that transforms oxygen‐terminated AlN surfaces into fluorine‐terminated interfaces for grafted p‐Si/n‐AlN diodes. By combining pseudo‐ALE oxide removal, XeF2 fluorination, and ultrathin SiNx stabilization, the engineered interface suppresses defect‐assisted reverse leakage by ...
Yi Lu +21 more
wiley +1 more source
Investigation on a novel SiC Schottky barrier diode hydrogen sensor with trench-insulator structure
Materials Research Express, 2021 A novel SiC Schottky barrier diode (SBD) hydrogen gas sensor with trench-insulator structure was proposed in this paper. A physical model is built for this hydrogen sensor based on 4H-SiC SBD thermionic emission theory, tunneling effect of carriers ...
Yonglan Qi +4 more
doaj +1 more source
Low‐Temperature Gold Deposition Improves CdTe Back Contacts
Advanced Materials Interfaces, EarlyView.Cd(Se,Te) samples are cooled during the evaporation of Au back contacts to thermally quench CdTe degradation. Reduced temperature during Au evaporation boosts PV efficiency, open‐circuit voltage, and fill factor. XPS associates these improvements with less chemical perturbation of the CdTe surface during metallization.
Christopher P. Muzzillo +5 more
wiley +1 more source
Hot-Carriers’ Effect on the Performance of Organic Schottky Diodes
IEEE Access, 2020 Because thermionic emission or tunneling occurs when carriers overcome or tunneling through the barrier for any Schottky diode, hot carriers caused by the applied electric field can enhance carrier thermionic emission or carrier tunneling.
Ling-Feng Mao
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Advances in Halide Perovskites for Photon Radiation Detectors
Advanced Materials Technologies, EarlyView.This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang +3 more
wiley +1 more source
A Study of Schottky Barrier Height Inhomogeneity on In/P-Silicon [PDF]
Журнал нано- та електронної фізики, 2011 The current-voltage characteristics of In/p-Si Schottky diode measured over a temperature range of 120-360 K have been interpreted on the basis of thermionic emission across an inhomogenous Schottky contact. The experiment shows that the apparent barrier
B.P. Modi
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Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics
Advanced Materials Technologies, EarlyView.In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald +3 more
wiley +1 more source
Discover ElectronicsSchottky Barrier diode (SBD) with Metal- Insulator- Semiconductor (MIS) structure is an important functional part for a broad spectrum of optoelectronic applications. This review paper illustrates the developments in the field of MIS structured SBDs that
K. U. Aiswarya +3 more
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Ferroelectric Devices for In‐Memory and In‐Sensor Computing
Advanced Science, EarlyView.Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang +5 more
wiley +1 more source
Temperature Dependent I-V Characteristics of Ag/P-Sn0.2Se0.8 Thin Film Schottky Barrier Diode [PDF]
Журнал нано- та електронної фізики, 2011 Ag/p-Sn0.2Se0.8 Schottky barrier diodes have been fabricated and characterized by the current-voltage (I-V) technique as a function of temperature in the range of 303 K to 403 K.
K.K. Patel +5 more
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