Results 21 to 30 of about 2,560 (228)
Applied Sciences, 2019 Graphene’s superior electronic and thermal properties have gained extensive attention from research and industrial sectors to study and develop the material for various applications such as in sensors and diodes.
Rahimah Mohd Saman +5 more
doaj +1 more source
Beilstein Journal of Nanotechnology, 2016 A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere.
Ivan Shtepliuk +5 more
doaj +1 more source
Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation
Walailak Journal of Science and Technology, 2018 Herein, boron implantation technique was employed to engineer the Schottky barrier height (SBH) of Ti/n-type silicon junction (Ti/n-Si). The Ti/n-Si Schottky diodes with boron doses of 4, 5.4 and 6.6´1012 cm-2 at the energy of 25 keV were fabricated with
Doldet TANTRAVIWAT +4 more
doaj +1 more source
GaN Nanowire Schottky Barrier Diodes
IEEE Transactions on Electron Devices, 2017 A new concept of vertical gallium nitride (GaN) Schottky barrier diode based on nanowire (NW) structures and the principle of dielectric REduced SURface Field (RESURF) is proposed in this paper. High-threading dislocation density in GaN epitaxy grown on foreign substrates has hindered the development and commercialization of vertical GaN power devices.
Gourab Sabui +7 more
openaire +4 more sources
Metal-semiconductor Schottky diode with Landauer’s formalism
Nano ExpressThe Schottky barrier diode is a unipolar electronic device formed by the heterojunction of a metal and a semiconductor, widely used in various electronic and optoelectronic applications.
Antonio Di Bartolomeo +8 more
doaj +1 more source
International Journal of Energetica, 2020 In this work, we have presented a theoretical study of Au/InSb/InP Schottky diode based on current-voltage (I-V) measurement in the temperature range ( 300 K- 425 K).
Ali Sadoun, Imad Kemerchou
doaj
Impact of the Semiconductor Defect Density on Solution-Processed Flexible Schottky Barrier Diodes
Micromachines, 2022 Schottky barrier diodes, developed by low-cost techniques and low temperature processes (LTP-SBD), have gained attention for different kinds of novel applications, including flexible electronic fabrication.
Julio C. Tinoco +5 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Grain boundaries (GBs) in polycrystalline materials often block charge transport and drive degradation. Using Gd‐doped CeO2 as a model electrolyte used in fuel/electrolysis cells, we developed a core‐shell infiltration method to selectively modify GB chemistry and space charge potential, achieving orders‐of‐magnitude ionic conductivity changes.
Z. Sha +5 more
wiley +1 more source
Advanced Functional Materials, EarlyView.A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam +10 more
wiley +1 more source
n‐Type Polymer Radio Frequency Rectifiers Operating at 18.5 GHz
Advanced Materials, EarlyView.Combining an n‐doped polymer semiconductor with wafer‐scale asymmetric planar electrodes featuring work function‐engineered contacts yields radio‐frequency diodes and rectifying circuits operating at up to 18.5 GHz. The devices combine scalable manufacturing with an operating frequency previously unattainable by large‐area organic electronics ...
Lazaros Panagiotidis +19 more
wiley +1 more source