Results 11 to 20 of about 5,171 (275)
Reversible Barrier Switching of ZnO/RuO2 Schottky Diodes [PDF]
Materials, 2021 The current-voltage characteristics of ZnO/RuO2 Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling.
Philipp Wendel +3 more
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SILICON CARBIDE SCHOTTKY BARRIER DIODE [PDF]
International Journal of High Speed Electronics and Systems, 2005 This chapter reviews the status of SiC Schottky barrier diode development. The fundamentals of Schottky barrier diodes are first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes and merged-pin-Schottky diodes.
Jian H. Zhao +2 more
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A generalized drift-diffusion model for rectifying Schottky contact simulation [PDF]
, 2010 We present a discussion on the modeling of Schottky barrier rectifying contacts (diodes) within the framework of partial-differential-equation-based physical simulations.
Bonani, Fabrizio +11 more
core +1 more source
Sensors, 2011 A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au ...
Abdul Manaf Hashim +3 more
doaj +1 more source
Journal of Materials Research and Technology, 2022 A 3-terminal device with a tunable Schottky barrier controls the charge transport across a vertically stacked structure named “barristor”- one composed of a graphene/rhenium diselenide (ReSe2) p-n heterojunction to exploit the advantages of the high ...
Thi Phuong-Anh Bach +7 more
doaj +1 more source
GaN Nanowire Schottky Barrier Diodes
IEEE Transactions on Electron Devices, 2017 A new concept of vertical gallium nitride (GaN) Schottky barrier diode based on nanowire (NW) structures and the principle of dielectric REduced SURface Field (RESURF) is proposed in this paper. High-threading dislocation density in GaN epitaxy grown on foreign substrates has hindered the development and commercialization of vertical GaN power devices.
Gourab Sabui +7 more
openaire +4 more sources
Metal oxide semiconductor-based Schottky diodes: a review of recent advances
Materials Research Express, 2020 Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky ...
Noorah A Al-Ahmadi
doaj +1 more source
Energies, 2021 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with embedded Schottky barrier diodes are widely known to improve switching energy loss by reducing reverse recovery characteristics.
Kyuhyun Cha, Kwangsoo Kim
doaj +1 more source
Current – voltage measurements of Al/a-Se/Au Schottky diode solar cells
Kuwait Journal of Science, 2022 Schottky diode Al/a-Se/Au as solar cells (SC) were made up by thermal evaporation technique (TET) on glass thin slide at a substrate under vacuum (vacuum value equal to mbar).
Mayyada Fdhala +4 more
doaj +1 more source
, 2020 The printed electronics enables the fabrication of a variety of devices and is becoming important as critical techniques for some applications in diverse areas.
Toshiyuki, Tamai, Masashi, Saitoh
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