Fabrication of Ga2O3 Schottky Barrier Diode and Heterojunction Diode by MOCVD. [PDF]
Materials (Basel), 2022 In this article, we reported on a Ga2O3-based Schottky barrier diode and heterojunction diode from MOCVD. The Si-doped n-type Ga2O3 drift layer, grown by MOCVD, exhibited high crystal quality, flat surfaces, and uniform doping.
Jiao T +8 more
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Metal-semiconductor Schottky diode with Landauer’s formalism
Nano ExpressThe Schottky barrier diode is a unipolar electronic device formed by the heterojunction of a metal and a semiconductor, widely used in various electronic and optoelectronic applications.
Antonio Di Bartolomeo +8 more
doaj +2 more sources
A Novel 183GHz Subharmonic Schottky Diode Mixer [PDF]
, 1992 PhDThe technique of microwave . limb sounding -from space represents a very powerful tool for determining the atmospheric processes involved in ozone depletion, the greenhouse effect, acid rain, etc..
Mann, Christopher Mark
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Optically Tunable Threshold Switching and Thermally Activated Transport in Planar Ag/MAPbI<sub>3</sub> Thin Single-Crystal Devices. [PDF]
Adv Sci (Weinh)Planar Ag/MAPbI3 thin single‐crystal halide perovskite devices show ultralow dark current and optically tunable threshold switching. Illumination enhances the polarity‐dependent hysteresis and shifts the switching voltage, whereas temperature‐dependent measurements reveal thermally activated, contact‐limited transport, underscoring the central role of ...
Durante O +16 more
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Printed Silver Electrode for Silicon-based Schottky Barrier Diode: High Rectification Ratio Enabled by Ag/p-Si Interface Exceeds Theoretical Barrier Height [PDF]
, 2020 The printed electronics enables the fabrication of a variety of devices and is becoming important as critical techniques for some applications in diverse areas.
Toshiyuki, Tamai, Masashi, Saitoh
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High quality Schottky contacts for limiting leakage currents in Ge-based Schottky barrier MOSFETs [PDF]
, 2009 Schottky barrier (SB) Ge channel MOSFETs suffer from high drain-body leakage at the required elevated substrate doping concentrations to suppress source-drain leakage.
Husain, M.K., Li, X., de Groot, C.H.
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A generalized drift-diffusion model for rectifying Schottky contact simulation [PDF]
, 2010 We present a discussion on the modeling of Schottky barrier rectifying contacts (diodes) within the framework of partial-differential-equation-based physical simulations.
Bonani, Fabrizio +11 more
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Image Force Corrections to Tung's Inhomogeneous Schottky Barrier Model
, 2021 The popular Tung model for Schottky barrier inhomogeneity considers how low-barrier patches (embedded in a high barrier background) impact the diode current. However, Tung's model fails to account for the image-force effect.
Dimitrijev, Sima, Nicholls, Jordan R
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High-frequency performance of Schottky source/drain silicon pMOS devices [PDF]
, 2008 A radio-frequency performance of 85-nm gate-length p-type Schottky barrier (SB) with PtSi source/drain materials is investigated. The impact of silicidation annealing temperature on the high-frequency behavior of SB MOSFETs is analyzed using an extrinsic
Snyder, J. +6 more
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Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]
, 2008 Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio +3 more
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