Results 31 to 40 of about 5,171 (275)

Schottky Contact of Gallium on p-Type Silicon [PDF]

Журнал нано- та електронної фізики, 2011
The evolution of barrier at Schottky contact and its stabilization to value characterized by the barrier height and unambiguous measurement is still being curiously perused as they hold the key control and manufacture of tailor made Schottky devices for ...
B.P. Modi, K.D. Patel
doaj  

Schottky barrier light emitting diode in standard CMOS technology

, 2011
Schottky barrier light emitting diode is designed and fabricated in CMOS technology. Stable Electro-luminescent emission is observed. The emission exhibits widespread spectral characteristics with nearly flatten peak in visible light range from673nm ...
Beiju Huang, Zan Dong, Wang, Wei, Guo, Weilian, Zanyun Zhang, Chen, Hongda, Weilian Guo, Hongda Chen, Dong, Zan, Wei Wang, Huang, B.(bjhuang@semi.ac.cn), Huang, Beiju, Zhang, Zanyun   +12 more
core   +1 more source

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

Beilstein Journal of Nanotechnology, 2016
A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere.
Ivan Shtepliuk, Jens Eriksson, Volodymyr Khranovskyy, Tihomir Iakimov, Anita Lloyd Spetz, Rositsa Yakimova   +5 more
doaj   +1 more source

Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation

Walailak Journal of Science and Technology, 2018
Herein, boron implantation technique was employed to engineer the Schottky barrier height (SBH) of Ti/n-type silicon junction (Ti/n-Si). The Ti/n-Si Schottky diodes with boron doses of 4, 5.4 and 6.6´1012 cm-2 at the energy of 25 keV were fabricated with
Doldet TANTRAVIWAT, Wittawat YAMWONG, Udom TECHAKIJKAJORN, Kazuo IMAI, Burapat INCEESUNGVORN   +4 more
doaj   +1 more source

Impact of the Semiconductor Defect Density on Solution-Processed Flexible Schottky Barrier Diodes

Micromachines, 2022
Schottky barrier diodes, developed by low-cost techniques and low temperature processes (LTP-SBD), have gained attention for different kinds of novel applications, including flexible electronic fabrication.
Julio C. Tinoco, Samuel A. Hernandez, María de la Luz Olvera, Magali Estrada, Rodolfo García, Andrea G. Martinez-Lopez   +5 more
doaj   +1 more source

Extraction of the electrical parameters of the Au/InSb/InP Schottky diode in the temperature range (300 K- 425 K)

International Journal of Energetica, 2020
In this work, we have presented a theoretical study of  Au/InSb/InP Schottky diode based on current-voltage (I-V) measurement in the temperature range ( 300 K- 425 K).
Ali Sadoun, Imad Kemerchou
doaj  

Powering Nanocrystal‐Based Heat Engines With Light‐Emitting Metasurfaces That Influence Their Temperature

Advanced Functional Materials, EarlyView.
Metasurfaces and other structured photonic environments can dramatically modify the absorption and/or light emission of semiconductors. However, the consequences of these changes on the temperature of the system are not well understood. The authors address this problem for colloidal nanocrystals and leverage their findings to convert light into ...
Hugo Kowalczyk, Yihao Yuan, Augustin Caillas, Amel Saidoun, Roméo Bonnet, Pascal Filloux, Emmanuel Lhuillier, Aloyse Degiron   +7 more
wiley   +1 more source

n‐Type Polymer Radio Frequency Rectifiers Operating at 18.5 GHz

Advanced Materials, EarlyView.
Combining an n‐doped polymer semiconductor with wafer‐scale asymmetric planar electrodes featuring work function‐engineered contacts yields radio‐frequency diodes and rectifying circuits operating at up to 18.5 GHz. The devices combine scalable manufacturing with an operating frequency previously unattainable by large‐area organic electronics ...
Lazaros Panagiotidis, Filip Aniés, Yiyang Yu, Mohammed Ghadiyali, Hendrik Faber, Zhanibek Bizak, Youssef Kabri, Pavlos Tzourmpakis, Suman Mandal, Linqu Luo, Temur Maksudov, Mohamad Insan Nugraha, Harold F. Mazo‐Mantilla, Patrice Vanelle, Julie Broggi, Khaled N. Salama, Udo Schwingenschlögl, Martin Heeney, Atif Shamim, Thomas D. Anthopoulos   +19 more
wiley   +1 more source

Comprehensive Design and Numerical Study of GaN Vertical MPS Diodes Towards Alleviated Electric Field Crowding and Efficient Carrier Injection

IEEE Journal of the Electron Devices Society, 2022
In recent years, gallium nitride (GaN) has exhibited tremendous potential for power electronic devices owing to its wider energy band gap, higher breakdown electric field, and higher carrier mobility [1]–[4].
Heng Wang, Sihao Chen, Hang Chen, Chao Liu   +3 more
doaj   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source