Results 31 to 40 of about 778,720 (285)

Schottky Contact of Gallium on p-Type Silicon [PDF]

Журнал нано- та електронної фізики, 2011
The evolution of barrier at Schottky contact and its stabilization to value characterized by the barrier height and unambiguous measurement is still being curiously perused as they hold the key control and manufacture of tailor made Schottky devices for ...
B.P. Modi, K.D. Patel
doaj  

High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications

Applied Sciences, 2019
Graphene’s superior electronic and thermal properties have gained extensive attention from research and industrial sectors to study and develop the material for various applications such as in sensors and diodes.
Rahimah Mohd Saman, Sharaifah Kamariah Wan Sabli, Mohd Rofei Mat Hussin, Muhammad Hilmi Othman, Muhammad Aniq Shazni Mohammad Haniff, Mohd Ismahadi Syono   +5 more
doaj   +1 more source

Electrodeposition of Ni-Si Schottky barriers [PDF]

, 2005
Electrodeposition is being used to fabricate magnetic microstructures directly on patterned n-type Si wafers of various substrate resistivities.
P.A.J. de Groot, Kiziroglou, M.E., Li, X.L., M. Abdelsalam, Bartlett, P.N., Abdelsalam, M., Xiaoli Li, de Groot, C.H., N. Bartlett, A.A. Zhukov, C.H. de Groot, Zhukov, A.A., de Groot, P., M.E. Kiziroglou   +13 more
core   +1 more source

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

Beilstein Journal of Nanotechnology, 2016
A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere.
Ivan Shtepliuk, Jens Eriksson, Volodymyr Khranovskyy, Tihomir Iakimov, Anita Lloyd Spetz, Rositsa Yakimova   +5 more
doaj   +1 more source

Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation

Walailak Journal of Science and Technology, 2018
Herein, boron implantation technique was employed to engineer the Schottky barrier height (SBH) of Ti/n-type silicon junction (Ti/n-Si). The Ti/n-Si Schottky diodes with boron doses of 4, 5.4 and 6.6´1012 cm-2 at the energy of 25 keV were fabricated with
Doldet TANTRAVIWAT, Wittawat YAMWONG, Udom TECHAKIJKAJORN, Kazuo IMAI, Burapat INCEESUNGVORN   +4 more
doaj   +1 more source

GaN Nanowire Schottky Barrier Diodes

IEEE Transactions on Electron Devices, 2017
A new concept of vertical gallium nitride (GaN) Schottky barrier diode based on nanowire (NW) structures and the principle of dielectric REduced SURface Field (RESURF) is proposed in this paper. High-threading dislocation density in GaN epitaxy grown on foreign substrates has hindered the development and commercialization of vertical GaN power devices.
Gourab Sabui, Vitaly Z. Zubialevich, Mary White, Pietro Pampili, Peter J. Parbrook, Mathew McLaren, Miryam Arredondo-Arechavala, Z. John Shen   +7 more
openaire   +4 more sources

Light‐Induced Field‐Tunneling Synapses in Solution‐Processed Van Der Waals Heterostructures for Scalable, Retina‐Inspired Optical Sensing

Advanced Functional Materials, EarlyView.
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam, Jihyun Kim, Soobeen Ji, In Soo Kim, Sejin Kim, Eungseon Yeon, Do Kyung Hwang, Iva Plutnarová, Zdeněk Sofer, Sang Min Won, Joohoon Kang   +10 more
wiley   +1 more source

Extraction of the electrical parameters of the Au/InSb/InP Schottky diode in the temperature range (300 K- 425 K)

International Journal of Energetica, 2020
In this work, we have presented a theoretical study of  Au/InSb/InP Schottky diode based on current-voltage (I-V) measurement in the temperature range ( 300 K- 425 K).
Ali Sadoun, Imad Kemerchou
doaj  

Impact of the Semiconductor Defect Density on Solution-Processed Flexible Schottky Barrier Diodes

Micromachines, 2022
Schottky barrier diodes, developed by low-cost techniques and low temperature processes (LTP-SBD), have gained attention for different kinds of novel applications, including flexible electronic fabrication.
Julio C. Tinoco, Samuel A. Hernandez, María de la Luz Olvera, Magali Estrada, Rodolfo García, Andrea G. Martinez-Lopez   +5 more
doaj   +1 more source

Schottky barrier light emitting diode in standard CMOS technology

, 2011
Schottky barrier light emitting diode is designed and fabricated in CMOS technology. Stable Electro-luminescent emission is observed. The emission exhibits widespread spectral characteristics with nearly flatten peak in visible light range from673nm ...
Beiju Huang, Zan Dong, Wang, Wei, Guo, Weilian, Zanyun Zhang, Chen, Hongda, Weilian Guo, Hongda Chen, Dong, Zan, Wei Wang, Huang, B.(bjhuang@semi.ac.cn), Huang, Beiju, Zhang, Zanyun   +12 more
core   +1 more source