Results 51 to 60 of about 778,720 (285)

Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm [PDF]

, 2013
The design, modeling, fabrication, and characterization of single-photon avalanche diode detectors with an epitaxial Ge absorption region grown directly on Si are presented.
Lever, LJM, Paul, D.J., Buller, GS, Ikonic, Zoran, Warburton, Ryan E, Ikonic, Z, Myronov, Maksym, Knights, AP, Leadley, D. R. (David R.), Gallacher, Kevin, Kelsall, Robert W., Pilgrim, Neil J, Pilgrim, NJ, Paul, DJ, Myronov, M., Paul, Douglas J. (Professor of Semiconductor Devices), Allred, P, Intermite, G., Leadley, David R, Huante-Ceron, E, Kelsall, RW, Lever, Leon J M, Pilgrim, Neil J., Kelsall, R.W., Allred, P., Myronov, M, Huante-Ceron, Edgar, Lever, Leon J. M., Lever, L.J.M., Leadley, D.R., Knights, A.P., Knights, Andrew P., Allred, Phil, Ikonic, Z., Huante-Ceron, E., Warburton, RE, Knights, Andrew P, Pilgrim, N.J., Buller, G.S., Intermite, G, Paul, Douglas J, Warburton, Ryan E., Leadley, DR, Intermite, Giuseppe, Gallacher, K, Warburton, R.E., Buller, G. S. (Gerald S.), Kelsall, Robert W, Buller, Gerald Stuart   +48 more
core   +1 more source

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

Electrocatalyst/Semiconductor Interfaces in Photoelectrocatalysts: Mechanistic Analysis of the Impact of Nanoparticle Electrocatalyst Coverage on Performance

Advanced Materials, EarlyView.
Reducing Ni nanoparticle coverage on n‐Si photoanodes enhances photovoltage by promoting thicker interfacial SiOx formation during photoelectrochemical oxygen evolution reaction (OER). Experiments, analytical modeling, and finite‐element simulations reveal that coverage‐dependent chemical interface evolution, rather than geometric effects alone ...
Aarti Mathur, Ahmet Sert, Suljo Linic
wiley   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source

Enhanced Non-Uniformity Modeling of 4H-SiC Schottky Diode Characteristics Over Wide High Temperature and Forward Bias Ranges

IEEE Journal of the Electron Devices Society, 2020
A practical model, adequate for full reproduction of inhomogeneous Schottky diodes' forward characteristics over wide high-temperature and bias ranges, is proposed.
Gheorghe Brezeanu, Gheorghe Pristavu, Florin Draghici, Razvan Pascu, Francesco Della Corte, Simone Rascuna   +5 more
doaj   +1 more source

Advances in Halide Perovskites for Photon Radiation Detectors

Advanced Materials Technologies, EarlyView.
This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang, Jieqi Wang, Xiaojun Cui, Carsten Ronning   +3 more
wiley   +1 more source

Investigation on a novel SiC Schottky barrier diode hydrogen sensor with trench-insulator structure

Materials Research Express, 2021
A novel SiC Schottky barrier diode (SBD) hydrogen gas sensor with trench-insulator structure was proposed in this paper. A physical model is built for this hydrogen sensor based on 4H-SiC SBD thermionic emission theory, tunneling effect of carriers ...
Yonglan Qi, Kaiyuan Lai, Haojie Lv, Bao Qi, Yuheng Zhao   +4 more
doaj   +1 more source

Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics

Advanced Materials Technologies, EarlyView.
In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald, Ali Nawaz, Amandeep Singh, Prashant Sonar   +3 more
wiley   +1 more source

A Study of Schottky Barrier Height Inhomogeneity on In/P-Silicon [PDF]

Журнал нано- та електронної фізики, 2011
The current-voltage characteristics of In/p-Si Schottky diode measured over a temperature range of 120-360 K have been interpreted on the basis of thermionic emission across an inhomogenous Schottky contact. The experiment shows that the apparent barrier
B.P. Modi
doaj  

Schottky-Barrier-Free Contacts with Two-Dimensional Semiconductors by Surface-Engineered MXenes [PDF]

, 2016
Two-dimensional (2D) metal carbides and nitrides, called MXenes, have attracted great interest for applications such as energy storage. We demonstrate their potential as Schottky-barrier-free metal contacts to 2D semiconductors, providing a solution to ...
Yuanyue Liu, Hai Xiao (1235151), William A. Goddard (1235154), Hai Xiao, Yuanyue Liu (1295970), William A. Goddard   +5 more
core   +1 more source