Results 51 to 60 of about 5,171 (275)

Controlling Film Formation in Inkjet‐printed MAPbBr3 Through Graphene Incorporation for Enhanced Photodetection

open access: yesAdvanced Materials Technologies, EarlyView.
This work highlights the impact of incorporating graphene nanoflakes into precursor inks of MAPbBr3 for inkjet‐printed optoelectronic device applications. A substantial modification of the crystallization dynamics is reported despite miniscule concentrations.
Kenneth Lobo   +12 more
wiley   +1 more source

Polarity Control of GaN and Realization of GaN Schottky Barrier Diode Based on Lateral Polarity Structure

open access: yes, 2017
This paper reports investigation on a polarity control scheme of GaN thin films and realization of Schottky barrier diode (SBD) fabricated on a lateral-polarity-structure (LPS) GaN without intentionally doping. Specifically, Ga-polar and N-polar GaN were
Fanping Meng   +19 more
core   +1 more source

Minority Carrier Injection in High-Barrier Si-Schottky Diodes [PDF]

open access: yes, 2018
In this paper, we investigate the presence of minority carriers and their role in charge carrier transport in silicon (Si) Schottky diodes with a high potential barrier.
Banerjee, Sourish   +7 more
core   +1 more source

Aluminum Oxynitride‐Engineered Transparent Aluminum Nitride Resistive Memory for Low‐Leakage Multilevel Switching in Micro‐LED Pixels

open access: yesAdvanced Materials Technologies, EarlyView.
An AlON interfacial layer is engineered within an AlN switching layer to enable transparent RRAM with four stable resistance states. The device achieves low‐voltage multilevel switching and a high HRS, allowing precise grayscale modulation and preventing light leakage in micro‐LEDs operated at VDD = 2.7 V.
Sung Keun Choi   +7 more
wiley   +1 more source

Enhanced Non-Uniformity Modeling of 4H-SiC Schottky Diode Characteristics Over Wide High Temperature and Forward Bias Ranges

open access: yesIEEE Journal of the Electron Devices Society, 2020
A practical model, adequate for full reproduction of inhomogeneous Schottky diodes' forward characteristics over wide high-temperature and bias ranges, is proposed.
Gheorghe Brezeanu   +5 more
doaj   +1 more source

Modeling the schottky barrier properties of graphene nanoribbon schottky diode [PDF]

open access: yes, 2014
The increasing demand for small sized, low power consumption and high processing speeds have always been the pillars of transistor development. To meet the demands of the transistor, the current trend is to reduce the size of Metal Oxide Semiconductor ...
Wong, King Kiat
core  

Modeling of Schottky Barrier Diode Millimeter-Wave Multipliers at Cryogenic Temperatures [PDF]

open access: yes, 2015
We report on the evaluation of Schottky barrier diode GaAs multipliers at cryogenic temperatures. A GaAs Schottky barrier diode model is developed for theoretical estimation of doubler performance. The model is used to predict efficiency of doublers from
Ardenkjær-Larsen, Jan Henrik   +11 more
core   +1 more source

Fabrication of High‐Density Multimodal Neural Probes Based on Heterogeneously Integrated CMOS

open access: yesAdvanced Science, EarlyView.
A chiplet‐based methodology democratizes active neural probe development on standard bulk CMOS services. This yields the first probe combining high‐density electrophysiology (416 electrodes) with calcium imaging (832 photodiodes) and complete on‐chip signal processing across 13 shanks.
Ju Hee Mun   +10 more
wiley   +1 more source

Electrical properties inorganic-on-organic hybrid gaas/graphene oxide schottky barrier diode

open access: yes, 2016
The Au88Ge12 alloy/n-type GaAs(100)/Graphene Oxide (GO)/Au Schottky barrier diode has been fabricated. GO has been prepared by Hummers method and deposited on the GaAs substrate by spraying method.
Yakuphanoğlu, Fahrettin   +1 more
core   +2 more sources

Investigation on a novel SiC Schottky barrier diode hydrogen sensor with trench-insulator structure

open access: yesMaterials Research Express, 2021
A novel SiC Schottky barrier diode (SBD) hydrogen gas sensor with trench-insulator structure was proposed in this paper. A physical model is built for this hydrogen sensor based on 4H-SiC SBD thermionic emission theory, tunneling effect of carriers ...
Yonglan Qi   +4 more
doaj   +1 more source

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