Results 61 to 70 of about 778,720 (285)

Electrically Reconfigurable Optical Initialization of Spin Valley Polarization in Monolayer WS2 Enabled by Switchable Dual‐Mode Liquid Crystal Lasers

Advanced Optical Materials, EarlyView.
This work presents an electrically controllable approach to spin–valley polarization in monolayer WS2 by integrating it with a dual‐mode liquid crystal laser. Applying an external field triggers phase transitions that switch the laser emission between helicity‐defined band‐edge lasing and unpolarized random lasing.
Yu‐Chuan Tsao, Ya‐Ping Hsieh, Yang‐Fang Chen, Hui‐Yu Chen   +3 more
wiley   +1 more source

A comprehensive review of suitable interfacial insulating layer selection, I-V characteristics and working parameters in MIS structured Schottky diodes for multifunctional optoelectronic applications

Discover Electronics
Schottky Barrier diode (SBD) with Metal- Insulator- Semiconductor (MIS) structure is an important functional part for a broad spectrum of optoelectronic applications. This review paper illustrates the developments in the field of MIS structured SBDs that
K. U. Aiswarya, K. J. Arun, M. D. Aggarwal, Padmaja Guggilla   +3 more
doaj   +1 more source

Hot-Carriers’ Effect on the Performance of Organic Schottky Diodes

IEEE Access, 2020
Because thermionic emission or tunneling occurs when carriers overcome or tunneling through the barrier for any Schottky diode, hot carriers caused by the applied electric field can enhance carrier thermionic emission or carrier tunneling.
Ling-Feng Mao
doaj   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

Temperature Dependent I-V Characteristics of Ag/P-Sn0.2Se0.8 Thin Film Schottky Barrier Diode [PDF]

Журнал нано- та електронної фізики, 2011
Ag/p-Sn0.2Se0.8 Schottky barrier diodes have been fabricated and characterized by the current-voltage (I-V) technique as a function of temperature in the range of 303 K to 403 K.
K.K. Patel, M. Patel, K.D. Patel, G.K. Solanki, V.M. Pathak, R. Srivastava   +5 more
doaj  

Schottky-Barrier FET Ultra-Low-Power Diode

, 2020
In this paper, for the first time, we apply the ultra-low-power (ULP) diode concept with Schottky Barrier (SB) transistors and analyze the performance in comparison to standard CMOS, using calibrated TCAD mixed-mode simulations.
Koes, Alexander, Flandre, Denis, 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Schwarz, Mike   +3 more
core   +1 more source

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source

Effect of Heating of Charge Carriers and Phonons on The Contact Resistance of Rectifying Metal-Semiconductor Structures

East European Journal of Physics
The dependence of the temperature of charge carriers and phonons on the contact resistance of the Schottky diode is calculated. It is shown that the increase in contact resistance depends on the current passing through the diode, the surface and volume ...
Gafur Gulyamov, K.B. Umarov, Alisher Z. Soliyev   +2 more
doaj   +1 more source

Influence of Cr doping on Schottky barrier height and visible light detection of ZnO thin films deposited by magnetron sputtering

Micro and Nano Engineering, 2019
A comparative study of the electrical and photodetection properties of ZnO and Cr doped ZnO thin films are being reported here. The films were deposited using magnetron sputtering. X-ray diffraction (XRD) revealed hexagonal crystal structure of the films
S. Fareed, Arifa Jamil, N. Tiwari, M.A. Rafiq   +3 more
doaj   +1 more source

High barrier Schottky diode with organic interlayer

, 2012
A new Cu/n-InP Schottky junction with organic dye (PSP) interlayer has been formed by using a solution cast process. An effective barrier height as high as 0.82 eV has been achieved for Cu/PSP/n-InP Schottky diodes, which have good current-voltage (I-V ...
AYDOĞAN, Şakir, A. Türüt, TURUT, Abdulmecit, Ş. Aydoğan, Ö. Güllü, Gullu, O.   +5 more
core   +1 more source