Results 61 to 70 of about 2,560 (228)

Electrically Tunable Piezotronic Transistor by Coupling Interface Polar Symmetry and Strain Gradient

Advanced Science, EarlyView.
A macroscale tip‐induced strain gradient generates bulk piezo‐charges in GaN, enabling bias‐controlled shielding and selective Schottky barrier modulation. This strain‐gradient piezotronic transistor exhibits electrically switchable high‐ and low‐sensitivity states, providing ultrahigh strain sensitivity and wide tunability for adaptive mechanical ...
Gongwei Hu, Xiaoming Dong, Yihan Zhang, Yong Chao, Menglu Li, Min Liu, Liqing Pan, Lijie Li, Wei Huang, Fobao Huang   +9 more
wiley   +1 more source

Anisotropic Memristive Switching in NbOCl2 Enabled by Directional Oxygen Ion Migration

Advanced Science, EarlyView.
This study investigates strongly orientation‐dependent memristive switching in anisotropic NbOCl2, observed exclusively along the in‐plane c‐axis. The switching originates from direction‐selective oxygen‐ion migration and vacancy propagation that modulate the Pd/NbOCl2 Schottky barrier, enabling short‐term plasticity.
Caokun Wang, Yun Ji, Sanchali Mitra, Yufei Shi, Haofei Zheng, Yee Sin Ang, Kah‐Wee Ang   +6 more
wiley   +1 more source

Flanking‐Group Engineering Unlocks Emerging Functionalities in Diketopyrrolopyrrole Semiconductors

Advanced Science, EarlyView.
This review presents a comprehensive and unified perspective of flanking‐group engineering in Diketopyrrolopyrrole (DPP) based organic semiconductors that connects molecular‐level design with cross‐device functionalities. By integrating insights from molecular design, solid‐state packing, and device physics, this review seeks to establish general ...
Xiaoyun Wu, Shanshan Zhou, Meng Li, Aung Ko Ko Kyaw, Xiao‐Lei Shi, Qian Liu   +5 more
wiley   +1 more source

Single nanowire-based UV photodetectors for fast switching

Nanoscale Research Letters, 2011
Relatively long (30 µm) high quality ZnO nanowires (NWs) were grown by the vapor-liquid-solid (VLS) technique. Schottky diodes of single NW were fabricated by putting single ZnO NW across Au and Pt electrodes.
Lu Jun, ul Hasan Kamran, Alvi N H, Nur O, Willander Magnus   +4 more
doaj  

Engineering Slow‐Carrier Interfacial Recombination Enables Tailored Spectral Response

Advanced Science, EarlyView.
This work demonstrates that weak‐drift slow carriers are preferentially captured at generic semiconductor surfaces/interfaces and recombine. This process is manipulated to achieve tailored spectral response. A tens of µm‐wide depletion region is created to observe surface collection rates for photocarriers generated at different positions.
Yibo Zhang, Haozhe Wang, Zeke Liu, Yun Zhong, Zheng‐Hong Lu, Nazir P. Kherani   +5 more
wiley   +1 more source

Optically Tunable Threshold Switching and Thermally Activated Transport in Planar Ag/MAPbI3 Thin Single‐Crystal Devices

Advanced Science, EarlyView.
Planar Ag/MAPbI3 thin single‐crystal halide perovskite devices show ultralow dark current and optically tunable threshold switching. Illumination enhances the polarity‐dependent hysteresis and shifts the switching voltage, whereas temperature‐dependent measurements reveal thermally activated, contact‐limited transport, underscoring the central role of ...
Ofelia Durante, Valeria Demontis, Sebastiano De Stefano, Selene Matta, Adolfo Mazzotti, Daniela Marongiu, Emanuele Meloni, Elisa Pili, Fang Liu, Nicola Sestu, Angelica Simbula, Mauro Carta, Michele Saba, Andrea Mura, Massimiliano Di Ventra, Giovanni Bongiovanni, Antonio Di Bartolomeo   +16 more
wiley   +1 more source

High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment

AIP Advances, 2019
This paper reports on a high-voltage vertical GaN Schottky barrier diode (SBD) using fluorine (F) ion implantation treatment. Compared with the GaN SBD without F implantation, this SBD effectively enhanced the breakdown voltage from 155V to 775V and ...
Zirui Liu, Jianfeng Wang, Hong Gu, Yumin Zhang, Weifan Wang, Rui Xiong, Ke Xu   +6 more
doaj   +1 more source

The electrical characteristics and conduction mechanisms of Zn doped silicon-based Schottky barrier diode. [PDF]

Heliyon, 2023
Oeba DA, Bodunrin JO, Moloi SJ.
europepmc   +1 more source

Engineering Large‐Grain Metal Halide Perovskite Films via Chemical Vapor Deposition for High‐Performance, Ultralow‐Noise Perovskite Photodetectors

Advanced Science, EarlyView.
Chemical vapor deposition produces large‐grain, phase‐pure CsPbBr3 films (grains up to 35 µm) with Drude‐like terahertz photoconductivity and twofold higher carrier mobility versus spin‐coated references. These microstructural advances translate into photodetectors with a detectivity of 8.4 × 1012 Jones, dark current below 1 pA cm−2, X‐ray sensitivity ...
Roel Vanden Brande, Sudipta Seth, Lei Gao, Bapi Pradhan, Dilkhush Khicher, Anastasiia Bazylevska, Wei Qu, Christian Sternemann, Hai Wang, Steven De Feyter, Weidong Xu, Fei Zhang, Mischa Bonn, Johan Hofkens, Elke Debroye   +14 more
wiley   +1 more source

Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer

Advanced Electronic Materials, Volume 11, Issue 6, May 2025.
A versatile strategy is reported for fabricating multi‐dimensional heterojunctions with significantly improved charge transfer capability. By integrating Ag nanowires with a MoS2/ZnO heterojunction, a fourfold increase in surface photovoltage is achieved, reaching 200 mV under visible light illumination.
Anh Thi Nguyen, Jungyoon Cho, Malkeshkumar Patel, Duc Anh Vu, Jungeun Song, Dongseok Suh, Ambrose Seo, Joondong Kim, Dong‐Wook Kim   +8 more
wiley   +1 more source