Results 61 to 70 of about 5,171 (275)

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

Development of photocatalysis‐membrane separation reactor systems for aqueous pollutant removal

PhotoMat, EarlyView., 2023
Abstract Background In our rapidly expanding society, the demand for clean water has steadily emerged as one of the most critical issues, promoting the development of numerous water treatment strategies. Aims Coupling photocatalysis and membrane separation technology provides an energy saving and environment‐friendly as well as sustainable method for ...
Junyang Zhang, Yingchun Miao, Yuning Huo, Hexing Li   +3 more
wiley   +1 more source

A Study of Schottky Barrier Height Inhomogeneity on In/P-Silicon [PDF]

Журнал нано- та електронної фізики, 2011
The current-voltage characteristics of In/p-Si Schottky diode measured over a temperature range of 120-360 K have been interpreted on the basis of thermionic emission across an inhomogenous Schottky contact. The experiment shows that the apparent barrier
B.P. Modi
doaj  

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source

A comprehensive review of suitable interfacial insulating layer selection, I-V characteristics and working parameters in MIS structured Schottky diodes for multifunctional optoelectronic applications

Discover Electronics
Schottky Barrier diode (SBD) with Metal- Insulator- Semiconductor (MIS) structure is an important functional part for a broad spectrum of optoelectronic applications. This review paper illustrates the developments in the field of MIS structured SBDs that
K. U. Aiswarya, K. J. Arun, M. D. Aggarwal, Padmaja Guggilla   +3 more
doaj   +1 more source

Hot-Carriers’ Effect on the Performance of Organic Schottky Diodes

IEEE Access, 2020
Because thermionic emission or tunneling occurs when carriers overcome or tunneling through the barrier for any Schottky diode, hot carriers caused by the applied electric field can enhance carrier thermionic emission or carrier tunneling.
Ling-Feng Mao
doaj   +1 more source

Enhanced thermionic emission and low 1/f noise in exfoliated graphene/GaN Schottky barrier diode

, 2016
Temperature-dependent electrical transport characteristics of exfoliated graphene/GaN Schottky diodes are investigated and compared with conventional Ni/GaN Schottky diodes.
Kashid, Ranjit, Ghosh, Arindam, Singh, Rajendra, Kumar, Vikram, Kumar, Ashutosh   +4 more
core   +1 more source

Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing

Advanced Science, EarlyView.
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo, Seokjin Oh, Minah Park, Jong Min Song, Hongseung Lee, Seohyeon Park, Sojin Jung, Seongbin Lim, Soohyun Lim, Dongsun Shin, Ji Won Heo, TaeWan Kim, Hagyoul Bae   +12 more
wiley   +1 more source

Temperature Dependent I-V Characteristics of Ag/P-Sn0.2Se0.8 Thin Film Schottky Barrier Diode [PDF]

Журнал нано- та електронної фізики, 2011
Ag/p-Sn0.2Se0.8 Schottky barrier diodes have been fabricated and characterized by the current-voltage (I-V) technique as a function of temperature in the range of 303 K to 403 K.
K.K. Patel, M. Patel, K.D. Patel, G.K. Solanki, V.M. Pathak, R. Srivastava   +5 more
doaj  

Giant Conductivity Modulation and Chemical Neuromodulation via Proton‐Electron Coupling in a Hydrogen‐Bonded Coordination Polymer

Advanced Science, EarlyView.
A “de‐doping” strategy positions mixed protonic–electronic conductors (MPECs) as adaptive neuromorphic platforms with dynamically tunable transport. Co‐BAND achieves giant conductivity modulation (>106) and chemically tunable synaptic plasticity. Analogous to biological neuromodulation, solvent vapors dynamically reprogram the device's learning rules ...
Kwangmin Park, Jumin Park, Huiyeong Ju, Nasim Arafat, Byoung Gwan Lee, Joohee Oh, Eejin Jang, Hyunseob Lim, Seok Min Yoon, Dae‐Woon Lim, Intek Song   +10 more
wiley   +1 more source