Results 81 to 90 of about 5,171 (275)
Impact of Annealing on CuInSe2 Thin Films and Its Schottky Interface [PDF]
Журнал нано- та електронної фізики, 2011 The room temperature current–voltage (I-V) characteristics of the Al/p-CuInSe2 Schottky Diodes fabricated on thermally evaporated CIS thin films, before and after annealing, were studied. Prior to their diode formation, the undertaken CIS thin films were
U. Parihar +5 more
doaj
Silicon Carbide Schottky Barrier Diode
, 2004 This chapter reviews the status of SiC Schottky barrier diode development. The fundamental of Schottky barrier diodes is first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes, and merged-pin ...
Sheng, Kuang +2 more
core
The Surge Current Failure and Thermal Analysis of 4H-SiC Schottky Barrier Diode
The surge current capability is one of the key parameters for the application of silicon carbide (SiC) Schottky barrier diode (SBD) in power converters. In this study, the surge current failure mechanism of a 650 V 4H-SiC SBD during non-repetitive surge ...
Cui, P +6 more
core +1 more source
Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode
, 2016 Temperature-dependent electrical transport characteristics of exfoliated graphene/GaN Schottky diodes are investigated and compared with conventional Ni/GaN Schottky diodes.
Ranjit Kashid (2564395) +4 more
core +1 more source
Junction Physics and Architectural Paradigms in Optoelectronic Semiconductor Fibers
Advanced Science, EarlyView.Optoelectronic fibers are emerging as a key platform for distributed sensing, energy harvesting, and optical communication in deformable systems. Their performance is fundamentally governed by junction formation under confined, dynamic processing conditions.
Hailiang Wang +4 more
wiley +1 more source
Optimum Barrier Height for SiC Schottky Barrier Diode
ISRN Electronics, 2013 The study of barrier height control and optimization for Schottky barrier diode (SBD) from its physical parameters have been introduced using particle swarm optimization (PSO) algorithm. SBD is the rectifying barrier for electrical conduction across the metal semiconductor (MS) junction and, therefore, is of vital importance to the successful operation
Alaa El-Din Sayed Hafez +1 more
openaire +1 more source
Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer
Advanced Electronic Materials, Volume 11, Issue 6, May 2025.A versatile strategy is reported for fabricating multi‐dimensional heterojunctions with significantly improved charge transfer capability. By integrating Ag nanowires with a MoS2/ZnO heterojunction, a fourfold increase in surface photovoltage is achieved, reaching 200 mV under visible light illumination.
Anh Thi Nguyen +8 more
wiley +1 more source
Angewandte Chemie, EarlyView.A vapor‐phase molecular toughening strategy is developed for pilot‐scale roll‐to‐roll (R2R) ‐compatible fabrication of flexible perovskite solar modules. Thiol vapor selectively regulates crystallization and anchors at grain boundaries, reducing defects while enhancing mechanical resilience.
Lirong Dong +18 more
wiley +2 more sources
Photoresponse Properties of Ambipolar Transport in WSe2 Field‐Effect Transistors
Advanced Electronic Materials, EarlyView.This study explores the photoresponse of WSe2 ambipolar field‐effect transistors, which exhibit unipolar, saturation, and ambipolar transport regions. Light illumination induces a shift of critical voltage with enhanced photocurrent generation driven by the photogating effect without the material degradation seen in avalanche photodetectors. This study
Jongeun Yoo +11 more
wiley +1 more source
Single nanowire-based UV photodetectors for fast switching
Nanoscale Research Letters, 2011 Relatively long (30 µm) high quality ZnO nanowires (NWs) were grown by the vapor-liquid-solid (VLS) technique. Schottky diodes of single NW were fabricated by putting single ZnO NW across Au and Pt electrodes.
Lu Jun +4 more
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