Results 81 to 90 of about 778,720 (285)

Enhanced thermionic emission and low 1/f noise in exfoliated graphene/GaN Schottky barrier diode

, 2016
Temperature-dependent electrical transport characteristics of exfoliated graphene/GaN Schottky diodes are investigated and compared with conventional Ni/GaN Schottky diodes.
Kashid, Ranjit, Ghosh, Arindam, Singh, Rajendra, Kumar, Vikram, Kumar, Ashutosh   +4 more
core   +1 more source

Engineering Slow‐Carrier Interfacial Recombination Enables Tailored Spectral Response

Advanced Science, EarlyView.
This work demonstrates that weak‐drift slow carriers are preferentially captured at generic semiconductor surfaces/interfaces and recombine. This process is manipulated to achieve tailored spectral response. A tens of µm‐wide depletion region is created to observe surface collection rates for photocarriers generated at different positions.
Yibo Zhang, Haozhe Wang, Zeke Liu, Yun Zhong, Zheng‐Hong Lu, Nazir P. Kherani   +5 more
wiley   +1 more source

Single nanowire-based UV photodetectors for fast switching

Nanoscale Research Letters, 2011
Relatively long (30 µm) high quality ZnO nanowires (NWs) were grown by the vapor-liquid-solid (VLS) technique. Schottky diodes of single NW were fabricated by putting single ZnO NW across Au and Pt electrodes.
Lu Jun, ul Hasan Kamran, Alvi N H, Nur O, Willander Magnus   +4 more
doaj  

Polarity Control of GaN and Realization of GaN Schottky Barrier Diode Based on Lateral Polarity Structure

, 2017
This paper reports investigation on a polarity control scheme of GaN thin films and realization of Schottky barrier diode (SBD) fabricated on a lateral-polarity-structure (LPS) GaN without intentionally doping. Specifically, Ga-polar and N-polar GaN were
Fanping Meng, Sheikhi, Moheb, Hongwei Li, Shiping Guo, Jichun Ye, Lingyan Liang, Cao, Hongtao, Pingqi Gao, Moheb Sheikhi, Junmei Li, Wei Guo, Gao, Pingqi, Guo, Wei, Guo, Shiping, Meng, Fanping, Li, Junmei, Liang, Lingyan, Li, Hongwei, Hongtao Cao, Ye, Jichun   +19 more
core   +1 more source

High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment

AIP Advances, 2019
This paper reports on a high-voltage vertical GaN Schottky barrier diode (SBD) using fluorine (F) ion implantation treatment. Compared with the GaN SBD without F implantation, this SBD effectively enhanced the breakdown voltage from 155V to 775V and ...
Zirui Liu, Jianfeng Wang, Hong Gu, Yumin Zhang, Weifan Wang, Rui Xiong, Ke Xu   +6 more
doaj   +1 more source

Engineering Large‐Grain Metal Halide Perovskite Films via Chemical Vapor Deposition for High‐Performance, Ultralow‐Noise Perovskite Photodetectors

Advanced Science, EarlyView.
Chemical vapor deposition produces large‐grain, phase‐pure CsPbBr3 films (grains up to 35 µm) with Drude‐like terahertz photoconductivity and twofold higher carrier mobility versus spin‐coated references. These microstructural advances translate into photodetectors with a detectivity of 8.4 × 1012 Jones, dark current below 1 pA cm−2, X‐ray sensitivity ...
Roel Vanden Brande, Sudipta Seth, Lei Gao, Bapi Pradhan, Dilkhush Khicher, Anastasiia Bazylevska, Wei Qu, Christian Sternemann, Hai Wang, Steven De Feyter, Weidong Xu, Fei Zhang, Mischa Bonn, Johan Hofkens, Elke Debroye   +14 more
wiley   +1 more source

The electrical characteristics and conduction mechanisms of Zn doped silicon-based Schottky barrier diode. [PDF]

Heliyon, 2023
Oeba DA, Bodunrin JO, Moloi SJ.
europepmc   +1 more source

Silicon Carbide Schottky Barrier Diode

, 2004
This chapter reviews the status of SiC Schottky barrier diode development. The fundamental of Schottky barrier diodes is first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes, and merged-pin ...
Sheng, Kuang, Zhao, Jian H., Lebron-Velilla, Ramon C.   +2 more
core  

Van der Waals Heterostructures for Next‐Generation Spintronics: Multiferroic‐Mediated Magnetoelectric Properties

Advanced Science, EarlyView.
As CMOS technology approaches fundamental energy limits, new paradigms for low‐power information processing are required. Magnetic systems are attractive for their spin transport, yet current‐induced magnetization control is energy inefficient. Multiferroic heterostructures enable energy‐efficient electric field manipulation of magnetism.
Donghyeon Lee, Jiwoong Yang, Inhyeok Oh, Sanghan Lee   +3 more
wiley   +1 more source

Cross‐scale Material‐Structure Synergy for 2D Metamaterials: Toward Customizable Intelligent Electromagnetic Manipulation in Multiphysics Fields

Advanced Science, EarlyView.
Recent advances in metasurface‐enabled low‐observable technologies are reviewed from the perspective of cross‐scale material–structure synergy. Electromagnetic, thermal, optical, and acoustic stealth are highlighted together with dynamic tuning, programmable coding, data‐driven inverse design, artificial intelligence, multispectral compatibility, and ...
Shuhao Wang, Xing Yang, Liping Liu, Yang Peng, Yangyang Wang, Hualiang Lv   +5 more
wiley   +1 more source