Results 81 to 90 of about 2,560 (228)

Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode. [PDF]

Micromachines (Basel), 2021
Zhang H, Kang X, Zheng Y, Wu H, Wei K, Liu X, Ye T, Jin Z.   +7 more
europepmc   +1 more source

Exploiting Temperature Effects for Robust Control and Reference Circuits Using Thin‐Film Contact‐Controlled Transistors

Advanced Electronic Materials, EarlyView.
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink, Jean‐Charles Fustec, Olivier de Sagazan, Rogier Fransen, George Bairaktatis, Emmanuel Jacques, Radu A. Sporea   +6 more
wiley   +1 more source

The influence of tunnel effect on the current injection of spin light-emitting diodes with InGaAs/GaAs quantum wells

Физика волновых процессов и радиотехнические системы, 2015
By using current-voltage characteristic and electro-photo luminescence measurements, the efficiency of spin electronic injection was investigated in the Co/Al_2 O_3 tunnel barrier/GaAs based structure, where spin current was generated by electric ...
S. Saeid
doaj  

Diamond Schottky barrier diodes

, 2008
Research on wide band gap semiconductors suitable for power electronic devices has spread rapidly in the last decade. The remarkable results exhibited by silicon carbide (SiC) Schottky batTier diodes (SBDs), commercially available since 2001, showed the potential of wide band gap semiconductors for replacing silicon (Si) in the range of medium to high ...
openaire   +2 more sources

Physical Operations of a Self-Powered IZTO/β-Ga₂O₃ Schottky Barrier Diode Photodetector. [PDF]

Nanomaterials (Basel), 2022
Labed M, Kim H, Park JH, Labed M, Meftah A, Sengouga N, Rim YS.   +6 more
europepmc   +1 more source

High‐Performance Solar‐Blind Photodetectors Enabled by Post‐Annealing Optimization of Solution‐Processed Ga2O3 Films

Advanced Electronic Materials, EarlyView.
Post‐annealing atmosphere and temperature are optimized to regulate oxygen‐related defect states in solution‐processed Ga2O3 films. The optimized H2/N2 annealing enables enhanced photoconductive gain while maintaining low dark current, leading to high‐performance solar‐blind photodetectors with a responsivity of 7.5 × 102 A W−1 under 254 nm ...
Shiqi Yan, Dingding Ni, Yaqi Zhou, Zijian Ding, Zhanjun Shi, Jingrui Ma, Baoqing Zhang, Jiawei Zhang, Xiao Wei Sun, Qian Xin, Aimin Song   +10 more
wiley   +1 more source

Schottky infrared detectors with optically tunable barriers beyond the internal photoemission limit

The Innovation
Internal photoemission is a prominent branch of the photoelectric effect and has emerged as a viable method for detecting photons with energies below the semiconductor bandgap.
Jintao Fu, Zhongmin Guo, Changbin Nie, Feiying Sun, Genglin Li, Shuanglong Feng, Xingzhan Wei   +6 more
doaj   +1 more source

Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode. [PDF]

Micromachines (Basel), 2022
Zhang H, Kang X, Zheng Y, Wei K, Wu H, Liu X, Ye T, Jin Z.   +7 more
europepmc   +1 more source

A Dual‐Branch Flux‐Based Extended Memristor Model With Machine‐Learning‐Assisted Calibration

Advanced Electronic Materials, EarlyView.
Multilayer oxide memristors integrated in crossbar arrays are described through a dual‐branch, flux‐controlled compact model. A three‐stage calibration workflow combining Latin hypercube sampling, Bayesian optimization, and gradient‐based refinement extracts device parameters from experimental data.
Davide Rossetti, K. Nikiruy, A.S. Demirkol, Alon Ascoli, M. Ziegler, R. Tetzlaff, Fernando Corinto   +6 more
wiley   +1 more source

Green‐Synthesized Bi‐Doped PEI N‐GQDs Enabling Long‐Term Stable Silicon Heterojunction Photodetectors

Advanced Electronic Materials, EarlyView.
Green‐engineered BiNPs&PEI N‐GQDs enable dual‐emission p‐Si Schottky photodetectors with strong photoresponse, long‐term stability, and a simple scalable fabrication strategy, offering a promising route for sustainable optoelectronic and photosensing applications.
Zeynep Berktaş, Arun Kumar, Salar H. Sedani, Mustafa Yıldız, İlker Yıdız, Antonio Di Bartolomeo, Elif Orhan   +6 more
wiley   +1 more source