Results 101 to 110 of about 5,171 (275)

Exploiting Temperature Effects for Robust Control and Reference Circuits Using Thin‐Film Contact‐Controlled Transistors

Advanced Electronic Materials, EarlyView.
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink, Jean‐Charles Fustec, Olivier de Sagazan, Rogier Fransen, George Bairaktatis, Emmanuel Jacques, Radu A. Sporea   +6 more
wiley   +1 more source

High breakdown voltage of 1.3 kV and low turn-on voltage of 0.48 V β-Ga2O3 heterojunction barrier Schottky diode with tungsten Schottky contact

Applied Physics Express
β-Ga _2 O _3 power diodes were expected to possess low turn-on voltage ( V _on ), low reverse leakage ( J _R ), and high blocking capability for low power losses. In this work, a low V _on (0.48 V) β-Ga _2 O _3 heterojunction barrier Schottky diode (HJBS)
Qiuyan Li, Weibing Hao, Jinyang Liu, Zhao Han, Song He, Xuanze Zhou, Guangwei Xu, Shibing Long   +7 more
doaj   +1 more source

A 5-aminoisophthalic acid low molecular weight gelator based novel semiconducting supramolecular Zn(ii)-metallogel: unlocking an efficient Schottky barrier diode for microelectronics. [PDF]

Nanoscale Adv, 2023
Dhibar S, Pal B, Karmakar K, Roy S, Hafiz SA, Roy A, Bhattacharjee S, Ray SJ, Ray PP, Saha B.   +9 more
europepmc   +1 more source

Electrical properties of Au-Sb/p-GaSe:Gd Schottky barrier diode

, 2009
Experimental results of the fabricated Schottky barrier diode on a GaSe:Gd substrate are presented. The electrical analysis of Au-Sb/p-GaSe:Gd structure has been investigated by means of current-voltage (I-V) and capacitance-voltage (C-V) measurements at
Duman, Songul
core   +1 more source

Molecular Design and Interfacial Functions of Self‐Assembled Monolayers for Perovskite and Tandem Solar Cells

Advanced Energy Materials, EarlyView.
We identify two decisive levers for SAM interfaces: molecular design (carboxylic acid‐based, phosphonic acid, other anchoring chemistries, and polymeric SAMs) and mixing routes (co‐assembly, in situ assembly, pre‐ and post‐treatment). Coordinated tuning of headgroups and assembly pathways optimises energy alignment and film formation, suppresses ...
Jiaxu Zhang, Bochun Kang, Feng Yan
wiley   +1 more source

A method to calculate the voltage-current characteristics of [PDF]

Maejo International Journal of Science and Technology, 2009
The voltage-current characteristics of the Schottky barrier diode defined by the diode equation can be obtained by using iteration method and a C++ program.
Rajneesh Talwar
doaj  

Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode. [PDF]

Micromachines (Basel), 2021
Zhang H, Kang X, Zheng Y, Wu H, Wei K, Liu X, Ye T, Jin Z.   +7 more
europepmc   +1 more source

AlGaN/GaN Field Effect Schottky Barrier Diode for a Low Loss Switching Device

, 2004
ABSTRUCT:We have proposed a novel field effect Schottky barrier diode (FESBD) with a dual Schottky structure combined with an AlGaN/GaN heterostructure in order to obtain a very low on-voltage.
Kohji Hataya, Hironari Takehara, Seikoh Yoshida, Jiang Li, Nariaki Ikeda, Takahiro Wada   +5 more
core   +1 more source

Structure and Spectroscopic Characterisation of Phenanthroline‐Based Iodobismuthate(III) Complexes Utilised for Raw Acoustic Signal Classification

Advanced Intelligent Discovery, EarlyView.
Memristors based on trimethylsulfonium (phenanthroline)tetraiodobismuthate have been utilised as a nonlinear node in a delayed feedback reservoir. This system allowed an efficient classification of acoustic signals, namely differentiation of vocalisation of the brushtail possum (Trichosurus vulpecula).
Ewelina Cechosz, Gisya Abdi, Andrzej Sławek, Marlena Gryl, Konrad Szaciłowski   +4 more
wiley   +1 more source

Physical Operations of a Self-Powered IZTO/β-Ga₂O₃ Schottky Barrier Diode Photodetector. [PDF]

Nanomaterials (Basel), 2022
Labed M, Kim H, Park JH, Labed M, Meftah A, Sengouga N, Rim YS.   +6 more
europepmc   +1 more source