Results 111 to 120 of about 2,560 (228)

Unlocking Ferroelectricity in Hafnia: From Phase Origins to Device Integration

Interdisciplinary Materials, EarlyView.
This review provides a systematic overview of the critical factors for inducing ferroelectricity in hafnia‐based systems, covering multiple dimensions such as physical origin mechanisms, materials research, integration strategies, and emerging application areas.
Jiangzhen Niu, Xichen Tang, Wenhui Shi, Yunrui Xiu, Huimin Mao, Ye Tao, Xiaoning Zhao, Ya Lin, Zhongqiang Wang, Haiyang Xu, Yichun Liu   +10 more
wiley   +1 more source

Ferroelectricity and Ferroionic Dynamics in Two‐Dimensional CuInP2S6

Information &Functional Materials, EarlyView.
The coupled dynamics of ferroelectric polarization and Cu‐ion migration endow CuInP2S6 with unique ferroionic functionalities. This review connects structure, switching mechanisms, and device applications to provide a unified perspective on two‐dimensional ferroionic materials.
Shangsheng Li, Shiyu Wang, Xiongfeng Wang, Qinglin Du, Ruochen Shangguan, Guoqiang Xi, Lin Wang, Wugang Liao   +7 more
wiley   +1 more source

Achievement of low turn-on voltage in Ga2O3 Schottky and heterojunction hybrid rectifiers using W/Au anode contact

AIP Advances
The use of the low work function (4.5 eV) tungsten (W) as a rectifying contact was studied to obtain low on-voltages in W/Ga2O3 Schottky rectifiers and NiO/Ga2O3 heterojunction rectifiers that were simultaneously fabricated on a single wafer. The devices
Chao-Ching Chiang, Jian-Sian Li, Hsiao-Hsuan Wan, Fan Ren, Stephen J. Pearton   +4 more
doaj   +1 more source

Overcoming spectral limits of perovskite photodetectors for the infrared region

InfoScience, EarlyView.
Infrared (IR) photodetectors are vital for modern optoelectronics, but traditional inorganic semiconductors face limitations in cost, processing, and bandgap tunability. This review provides a summary of advanced strategies to extend metal halide perovskites into the IR region, categorizing approaches into intrinsic material engineering, physical ...
Jiean Li, Bobo Li, Mingxia Qiu, Wang Zhang, Xuan Fang   +4 more
wiley   +1 more source

MXenes in Next‐Generation Light‐Emitting Diodes: Innovations, Challenges, and Future Prospects

Laser &Photonics Reviews, EarlyView.
This review provides a systematic and critical overview of MXene integration in LEDs from their synthesis strategies and electronic characteristics to their roles as electrodes, interlayers, and emissive materials. It also explores the emerging prospects and challenges for MXene‐enabled flexible, transparent, and intelligent display technologies that ...
Awais Ali, Muhammad Ahsan Saeed, Waqas Ahmad, Hanseok Seo, Junhyeok Park, Seongkeun Oh, Hyung Jin Choi, Muhammad Junaid Sultan, Rana Mujahid, Soong Ju Oh   +9 more
wiley   +1 more source

Discovering Shared Design Heritage for Semiconductor‐Based Gamma‐Ray Spectrometers: From CdTe to Metal Halide Perovskites

Laser &Photonics Reviews, EarlyView.
Decades of CdTe and CdZnTe gamma‐ray spectrometer development define core design principles for room‐temperature semiconductor detectors. This Review highlights how metal halide perovskites rapidly assimilate these principles, particularly through defect and compositional engineering strategies that establish favorable spectroscopic conditions for ...
Younghak Kim, Jiwon Seo, Jihwan Boo, Jaehyeon Seo, Chanho Kim, Geehyun Kim, Jung‐Yeol Yeom, Beomjun Park   +7 more
wiley   +1 more source

Wet‐Transferred MoS2 on Passivated InP: A Van der Waals Heterostructure for Advanced Optoelectronic Applications

physica status solidi (RRL) – Rapid Research Letters, Volume 19, Issue 5, May 2025.
This study presents a photodetector based on atomically thin MoS2 on an InP substrate, forming an n‐MoS2/p‐InP type‐II staggered heterojunction. The device exhibits excellent rectifying properties with an ideality factor of 1.57 and achieves a peak photoresponsivity of 960 mA W−1, while MoS2 provides stable passivation for InP. III–V semiconductors are
Dong Hwi Choi, Jae Hyeop Lee, Min Su Kim, Jaeseo Park, Jun Oh Kim, Teli Aviraj Mahadev, Beknalkar Sonali Ajay, Hong Hyuk Kim, Jae Cheol Shin   +8 more
wiley   +1 more source

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

Small, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong, Maheswari Sivan, Jieming Pan, Zihang Fang, Jianan Li, Zefeng Xu, Shi Zhao, Quanzhen Wan, Evgeny Zamburg, Aaron Voon‐Yew Thean   +9 more
wiley   +1 more source

Improved Charge Transport and Device Performance in p‐i‐n Carbon Electrode Perovskite Solar Cells Using SiC‐APTES Additive

Small, EarlyView.
Modification of carbon electrode by mixing silicon carbide nanoparticles functionalized with 3‐aminopropyltriethoxysilane improves the charge transport and device performance of p‐i‐n perovskite solar cells over 18% along with the decreased hysteresis and extended stability.
Mikhail Pylnev, Ryosuke Nishikubo, Tomoya Nakamura, Ryoji Shimomura, Atsushi Wakamiya, Akinori Saeki   +5 more
wiley   +1 more source

A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer. [PDF]

Micromachines (Basel), 2019
Sun Y, Wang Y, Tang J, Wang W, Huang Y, Kuang X.   +5 more
europepmc   +1 more source