Results 111 to 120 of about 778,720 (285)

High‐Performance Solar‐Blind Photodetectors Enabled by Post‐Annealing Optimization of Solution‐Processed Ga2O3 Films

Advanced Electronic Materials, EarlyView.
Post‐annealing atmosphere and temperature are optimized to regulate oxygen‐related defect states in solution‐processed Ga2O3 films. The optimized H2/N2 annealing enables enhanced photoconductive gain while maintaining low dark current, leading to high‐performance solar‐blind photodetectors with a responsivity of 7.5 × 102 A W−1 under 254 nm ...
Shiqi Yan, Dingding Ni, Yaqi Zhou, Zijian Ding, Zhanjun Shi, Jingrui Ma, Baoqing Zhang, Jiawei Zhang, Xiao Wei Sun, Qian Xin, Aimin Song   +10 more
wiley   +1 more source

Schottky infrared detectors with optically tunable barriers beyond the internal photoemission limit

The Innovation
Internal photoemission is a prominent branch of the photoelectric effect and has emerged as a viable method for detecting photons with energies below the semiconductor bandgap.
Jintao Fu, Zhongmin Guo, Changbin Nie, Feiying Sun, Genglin Li, Shuanglong Feng, Xingzhan Wei   +6 more
doaj   +1 more source

Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode. [PDF]

Micromachines (Basel), 2022
Zhang H, Kang X, Zheng Y, Wei K, Wu H, Liu X, Ye T, Jin Z.   +7 more
europepmc   +1 more source

A Dual‐Branch Flux‐Based Extended Memristor Model With Machine‐Learning‐Assisted Calibration

Advanced Electronic Materials, EarlyView.
Multilayer oxide memristors integrated in crossbar arrays are described through a dual‐branch, flux‐controlled compact model. A three‐stage calibration workflow combining Latin hypercube sampling, Bayesian optimization, and gradient‐based refinement extracts device parameters from experimental data.
Davide Rossetti, K. Nikiruy, A.S. Demirkol, Alon Ascoli, M. Ziegler, R. Tetzlaff, Fernando Corinto   +6 more
wiley   +1 more source

Diamond Schottky barrier diodes

, 2008
Research on wide band gap semiconductors suitable for power electronic devices has spread rapidly in the last decade. The remarkable results exhibited by silicon carbide (SiC) Schottky batTier diodes (SBDs), commercially available since 2001, showed the potential of wide band gap semiconductors for replacing silicon (Si) in the range of medium to high ...
openaire   +2 more sources

Green‐Synthesized Bi‐Doped PEI N‐GQDs Enabling Long‐Term Stable Silicon Heterojunction Photodetectors

Advanced Electronic Materials, EarlyView.
Green‐engineered BiNPs&PEI N‐GQDs enable dual‐emission p‐Si Schottky photodetectors with strong photoresponse, long‐term stability, and a simple scalable fabrication strategy, offering a promising route for sustainable optoelectronic and photosensing applications.
Zeynep Berktaş, Arun Kumar, Salar H. Sedani, Mustafa Yıldız, İlker Yıdız, Antonio Di Bartolomeo, Elif Orhan   +6 more
wiley   +1 more source

CsSnBr3 and Cs3Bi2Br9: Structural, Optical Characteristics, and Application in a Schottky Barrier Diode

Advanced Photonics Research
The search for alternatives to Pb‐based perovskites, due to concerns about stability and toxicity, has led to the exploration of Pb‐free options.
Olusola Akinbami, Thelma Majola, Grace Nomthandazo Ngubeni, Kalenga Pierre Mubiayi, Nosipho Moloto   +4 more
doaj   +1 more source

Synthesis, Characterization of l,3-di-eicosanyl-2-(p-tolylazo)Imidazolium Bromide and Fabrication of Schottky Diode by Langmuir-Blodgett Technique

ES General
l,3-Di-eicosanyl-2-(p-tolylazo)imidazolium bromide (1) has been organized in Langmuir-Blodgett (LB) films for the development of Schottky Barrier Diode.
Abhisake Karmakar, Soumyajyoti Ghosh, Ujjal Saren, Pradip Maiti, Pabitra Kumar Paul, Gourisankar Roymahapatra, Debashis Mallick, Pradip Kumar Mahapatra, Chittaranjan Sinha   +8 more
doaj   +1 more source

Balancing Injection and Short‐Channel Effects in Organic Permeable Base Transistors via Thickness Scaling

Advanced Electronic Materials, EarlyView.
Organic permeable base transistors are shown to benefit from balanced control of the semiconductor layers above and below the permeable base. Simulations and experiments indicate that the top semiconductor layer affects charge injection and lateral transfer length, while the bottom layer modulates the collector‐induced short‐channel effects.
Sun‐Woo Jo, Songhyun Kim, Sanghoon Park, Hanul Moon, Seunghyup Yoo   +4 more
wiley   +1 more source

Strategies and Challenges in Memristor‐Selector Integration for High‐Density Memory and Compute‐in‐Memory Systems

Advanced Electronic Materials, EarlyView.
Selector integration enables scalable memristor crossbar arrays by suppressing sneak‐path currents and improving array selectivity. This review summarizes integration strategies, device requirements, challenges, and opportunities for high‐density memory, compute‐in‐memory, and neuromorphic computing systems.
Zohreh Hajiabadi, David B. Thomas, Harold M. H. Chong, Firman M. Simanjuntak   +3 more
wiley   +1 more source