Results 131 to 140 of about 778,720 (285)
Surface‐Functionalized MXene for Enhanced Photocatalytic CO2 Reduction
Poly(catechol/p‐cresol)‐functionalized MXene (f‐MXene) enhances oxidation stability while preserving conductivity, enabling efficient interfacial electron transfer in a Cu/f‐MXene/reduced TiO2 photocatalyst. Strong Cu–f‐MXene synergy promotes CO2 activation and selective CH4 production, achieving a CH4 yield of 18.1 µmol g−1 (>200 × vs.
Dongyun Kim +18 more
wiley +1 more source
Electrical Properties of a Ga0.952In0.048N0.016As0.984 p-i-n Schottky Barrier Diode
The electrical characteristic of a Ga 0.952 In 0.048 N0.016 As 0.984 p-i-n diode with quantum wells was characterized by current-voltage (I-V) measurement at room temperature.
Nafarizal Nayan +7 more
core
Memristors based on trimethylsulfonium (phenanthroline)tetraiodobismuthate have been utilised as a nonlinear node in a delayed feedback reservoir. This system allowed an efficient classification of acoustic signals, namely differentiation of vocalisation of the brushtail possum (Trichosurus vulpecula).
Ewelina Cechosz +4 more
wiley +1 more source
A visible‐light‐driven ambient photocatalytic method in‐situ fabricates Co/CoP‐x and Co/CoP@rGO heterojunction with enhanced charge separation, enabling highly efficient relayed electrocatalytic NOx− reduction to NH3 with outstanding Faraday efficiency and ammonia productivity.
Xin Zhao +7 more
wiley +1 more source
Effect of deep impurity levels on Schottky barrier diode characteristics
In the presence of an arbitrary number of deep donor levels volt-ampere and volt-farad characteristics are obtained for the Schottky barrier diode which contains a thin dielectric layer between the metal and the ...
Sheka, D. +3 more
core +1 more source
Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction. [PDF]
Sun T, Luo X, Wei J, Yang C, Zhang B.
europepmc +1 more source
Chalcogen‐based compounds are explored as versatile tools to enhance the stability and performance of halide perovskites. Their roles in defect passivation, ion migration suppression, and interface engineering are analyzed, along with impacts on device efficiency.
Atanu Jana +4 more
wiley +1 more source
Optimized ITO back contact with pre‐Ga supply growth and Ag incorporation suppresses GaOx formation and interface recombination in bifacial CIGS solar cells. The devices achieve 17.25% front and 5.77% rear efficiency, delivering record bifacial power density up to 32.26 mW cm−2 in 4T perovskite/CIGS tandem architectures under enhanced albedo ...
Amanat Ali +13 more
wiley +1 more source
Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics. [PDF]
Sun Y +7 more
europepmc +1 more source
The sequential formation of Ag2Se and AgSbSe2 phases at the Sb2Se3/Mo interface upon Ag incorporation in co‐evaporated Sb2Se3 solar cells promotes grain growth and defect passivation. These newly formed intermediate phases enhance crystallinity and suppress recombination, leading to significant improvements in open‐circuit voltage, fill factor, and ...
Van‐Quy Hoang +16 more
wiley +1 more source

