Results 131 to 140 of about 5,171 (275)
Contact effect on the current-voltage characteristic of graphene nanoribbon based schottky diode
, 2015 This paper presents the study of the current-voltage characteristic of graphene nanoribbon based Schottky diode using analytical method. The work presents a simple model to analyse the current-voltage characteristic in the function of Schottky barrier ...
Ahmadi, M. Taghi +2 more
core +1 more source
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.Gas–solid interface‐assisted growth strategies have unlocked precise control over crystal structure, morphology, dimension, and molecular packing. The obtained organic semiconductor single crystals represent the ideal candidates for high‐performance organic optoelectronic devices.
Tingyi Yan +8 more
wiley +1 more source
Fabrication and Characterization of Al/p-CuInAlSe2 Thin Film Schottky Diodes [PDF]
Журнал нано- та електронної фізики, 2013 Al/p-CuInAlSe2 polycrystalline schottky diodes fabricated by flash evaporation method were undertaken for their electrical analysis at room temperature. Diode parameters of the undertaken diodes were then derived from the current-voltage (I-V) as well as
Usha Parihar, N. Padha, C.J. Panchal
doaj
, 2009 A hydrogen gas sensor based on Pt/nanostructured ZnO Schottky diode has been developed. Our proposed theoretical model allows for the explanation of superior dynamic performance of the reverse biased diode when compared to the forward bias operation. The
Yu, J. +4 more
core +1 more source
ZnO Nanowires by Chemical Bath Deposition: A Review on Doping and Functional Devices
Electron, EarlyView.This review reports the most recent and well‐established state‐of‐the‐art and scientific challenges related to the doping of ZnO nanowires by chemical bath deposition, encompassing native point and hydrogen‐related defects, as well as extrinsic dopants.
Clément Lausecker +3 more
wiley +1 more source
STRUCTURE AND techological improvments of tmbs diodes
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019 An improved structure and technological process of trench MOS barrier Schottky (TMBS) diodes are developed and studied by 2D-simulation. The experiments performed demonstrated simplification of the technology by elimination of one photolithography and ...
V. S. Kotov +2 more
doaj
Improving the reliability of Schottky diodes under the influence of electrostatic discharges [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2012 Experimental studies of Schottky diodes with molybdenum barrier structure showed that resistance of the structures to electrostatic discharge depends on the design parameters, as well as on guard ring diffusion depth.
Sоlоdukha V. A. +4 more
doaj
Light‐Modulated Exchange Bias in Multiferroic Heterostructures
Electron, EarlyView.In this article, exchange bias and magnetization are modulated with visible light at room temperature in PMN‐PZT/FeGa/IrMn multiferroic heterostructures. Photostrictive effect is the main mechanism leading to the modulation of magnetic anisotropy and interfacial exchange bias coupling between the ferromagnetic and antiferromagnetic layers.
Huan Tan +9 more
wiley +1 more source
Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode
, 2015 © 2015 AIP Publishing LLC. This paper presents a combined technique of high voltage off-state stress and current transient measurements to investigate the trapping/de-trapping characteristics of Au-free AlGaN/GaN Schottky barrier diodes.
Groeseneken, G +16 more
core +1 more source
Quasi‐digital memristor with self‐rectifying and synaptic functions in crossbar array architectures
FlexMat, EarlyView.The text should be different from the abstract text. A self‐rectifying quasi‐digital memristor (QDM) featuring a well‐defined p‐AgI/n‐PbI2 heterojunction is developed. It monolithically integrate diode‐like rectification, digital switching, and analog plasticity.
Tianyu Liu +11 more
wiley +1 more source