Results 151 to 160 of about 778,720 (285)
Abstract Imagers operating in the visible to near‐infrared (NIR) range play an important role in applications such as industrial sorting, security surveillance, and autonomous driving. However, conventional imaging technologies based on silicon and III–V semiconductors suffer from several limits, including restricted spectral range, high fabrication ...
Xin Hong +4 more
wiley +1 more source
Effect of CO on characteristics of AlGaN/GaN Schottky diode
Pt Schottky diode gas sensors for CO are fabricated using AlGaN/ GaN high electron mobility transistor ( HEMTs) structure. The diodes show a remarkable sensor signal (3 mA, in N-2; 2mA in air ambient) biased 2V after 1% CO is introduced at 50 degrees C ...
Hu, GX +10 more
core
Centered on the multiscale meniscus, this review dissects mass transport in meniscus‐guided coating into parallel and lateral components. By analyzing the balance of multiple factors during crystallization, it establishes a clear morphology‐performance relationship.
Yumeng Wang +7 more
wiley +1 more source
Photoconductive Gain Behavior of Ni/β-Ga2O3 Schottky Barrier Diode-Based UV Detectors. [PDF]
Kopyev VV +4 more
europepmc +1 more source
This review explores recent progress in printing strategies such as inkjet, screen, liquid metal, and roll to roll (R2R) methods and their roles in fabricating flexible TFTs. Device architectures are examined with emphasis on printed components and their influence on performance and stability.
Xia Zhao +6 more
wiley +1 more source
Supramolecular Ni(II)-Selective Gel Assembly toward Construction of a Schottky Barrier Diode. [PDF]
Singh V, Chauhan DK, Pandey R.
europepmc +1 more source
Ferroelectricity and Ferroionic Dynamics in Two‐Dimensional CuInP2S6
The coupled dynamics of ferroelectric polarization and Cu‐ion migration endow CuInP2S6 with unique ferroionic functionalities. This review connects structure, switching mechanisms, and device applications to provide a unified perspective on two‐dimensional ferroionic materials.
Shangsheng Li +7 more
wiley +1 more source
A Novel 4H-SiC SGT MOSFET with Improved P+ Shielding Region and Integrated Schottky Barrier Diode. [PDF]
Cao X, Liu J, An Y, Ren X, Yin Z.
europepmc +1 more source
A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer. [PDF]
Sun Y +5 more
europepmc +1 more source
Overcoming spectral limits of perovskite photodetectors for the infrared region
Infrared (IR) photodetectors are vital for modern optoelectronics, but traditional inorganic semiconductors face limitations in cost, processing, and bandgap tunability. This review provides a summary of advanced strategies to extend metal halide perovskites into the IR region, categorizing approaches into intrinsic material engineering, physical ...
Jiean Li +4 more
wiley +1 more source

