Results 151 to 160 of about 5,171 (275)

Characteristics of Aluminum-silicon Schottky Barrier Diode

, 1970
Aluminumn-type silicon Schottky barrier diodes with near-ideal characteristics have recently been developed. In this paper the characteristics of such a Schottky barrier are discussed.
Yu, A. Y. C., Mead, C. A.
core  

Achievement of low turn-on voltage in Ga2O3 Schottky and heterojunction hybrid rectifiers using W/Au anode contact

AIP Advances
The use of the low work function (4.5 eV) tungsten (W) as a rectifying contact was studied to obtain low on-voltages in W/Ga2O3 Schottky rectifiers and NiO/Ga2O3 heterojunction rectifiers that were simultaneously fabricated on a single wafer. The devices
Chao-Ching Chiang, Jian-Sian Li, Hsiao-Hsuan Wan, Fan Ren, Stephen J. Pearton   +4 more
doaj   +1 more source

Simulation Insights Into Enhanced Emitter Contact Passivation via LECO on Industrial TOPCon Solar Cells

Progress in Photovoltaics: Research and Applications, EarlyView.
Numerical simulations were employed to boost industrial TOPCon cells from 25.5% to 26.07% by suppressing J0e,metal,eff without compromising ρc with a dual optimization strategy: (1) engineering the selective emitter sheet resistance (Rsh_SE) to 117 Ω/□ and (2) reducing the LECO‐induced partial metal contact ratio (fpmc) to 1%.
Jiayu Xu, Yun Qin, Zhiyuan Zhang, Wei Fan, Wu Zhang, Qun Liu, Jiaji Lin, Yuhao Cheng, Ning Song, Bram Hoex, Lang Zhou, Fa‐Jun Ma   +11 more
wiley   +1 more source

Wet‐Transferred MoS2 on Passivated InP: A Van der Waals Heterostructure for Advanced Optoelectronic Applications

physica status solidi (RRL) – Rapid Research Letters, Volume 19, Issue 5, May 2025.
This study presents a photodetector based on atomically thin MoS2 on an InP substrate, forming an n‐MoS2/p‐InP type‐II staggered heterojunction. The device exhibits excellent rectifying properties with an ideality factor of 1.57 and achieves a peak photoresponsivity of 960 mA W−1, while MoS2 provides stable passivation for InP. III–V semiconductors are
Dong Hwi Choi, Jae Hyeop Lee, Min Su Kim, Jaeseo Park, Jun Oh Kim, Teli Aviraj Mahadev, Beknalkar Sonali Ajay, Hong Hyuk Kim, Jae Cheol Shin   +8 more
wiley   +1 more source

Interface Engineering of Chemical Vapor‐Deposited 2D MoSe2

physica status solidi (RRL) – Rapid Research Letters, EarlyView.
Fluorine exposure and nitrogen ion implantation are employed as interface engineering strategies to modulate the near‐surface electronic structure of chemical vapor deposition‐grown MoSe2. Spectroscopic analysis reveals that fluorination induces mild lattice modifications and p‐type doping, while nitrogen implantation introduces defects and n‐type ...
Guilherme Araújo, Valerio C. A. Ficca, Vicente Lopes, Ernesto Placidi, Andrea Capasso   +4 more
wiley   +1 more source

Unipolar β-Ga2O3 Pseudo-junction barrier Schottky diodes via Low-Cost magnesium diffusion process

Beta Gallium Oxide (β-Ga2O3) Junction Barrier Schottky diodes possess excellent breakdown characteristics and efficiency, but the lack of p-type β-Ga2O3 has led to the use of alternative materials, such as NiOx, which pose challenges regarding lattice ...
Ganesh Mainali, Mainali, Ganesh, Li, Xiaohang, Khandelwal, Vishal, Glen Isaac Maciel García, Taboada Vasquez, Jose, Biplab Sarkar, Jose Manuel Taboada Vasquez, Yuvaraja, Saravanan, Xiaohang Li, Sarkar, Biplab, Xiao Tang, Tang, Xiao, Garcia, Glen Isaac I. Maciel, Vishal Khandelwal, Saravanan Yuvaraja   +15 more
core   +1 more source

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

Small, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong, Maheswari Sivan, Jieming Pan, Zihang Fang, Jianan Li, Zefeng Xu, Shi Zhao, Quanzhen Wan, Evgeny Zamburg, Aaron Voon‐Yew Thean   +9 more
wiley   +1 more source

Electrically Tunable Tunneling and Spectral Response in WSe2/h‐BN/CdSe/Graphene Heterostructure

Small, EarlyView.
In the WSe2/h‐BN/CdSe quantum dot/graphene heterostructure, the graphene voltage dynamically tunes the tunneling barrier and energy alignment across the h‐BN layer. The bias‐dependent Fermi‐level alignment enhances the tunneling density of states, leading to efficient extraction of photo‐excited electrons from QDs into WSe2 and graphene.
Sang‐Hyeon Lee, Justice Agbeshie Teku, Min‐Hye Jeong, Jae‐Hyeon Ahn, Weon‐Sik Chae, Dohyun Kwak, Jong‐Soo Lee   +6 more
wiley   +1 more source

Bright Self‐Trapped Exciton Emission of CsPbBr3@CsPb2Br5 Nanostructures Created by Dissolution and Recrystallization of Hydrophilic Cu:CsPbBr3

Small, EarlyView.
This work reports a differentiated ion‐doping strategy to engineer the self‐trapped exciton emission of CsPbBr3@CsPb2Br5 nanostructures, in which bright orange emission is obtained by the dissolution and recrystallization of Cu:CsPbBr3 in water. Lattice‐incorporated Cu components create self‐trapped exciton centers because of bright green emission ...
Wenbin Shi, Xiao Zhang, Hsueh Shih Chen, San Ping Jiang, Ping Yang   +4 more
wiley   +1 more source

A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer. [PDF]

Micromachines (Basel), 2019
Sun Y, Wang Y, Tang J, Wang W, Huang Y, Kuang X.   +5 more
europepmc   +1 more source