Results 171 to 180 of about 5,171 (275)

A multistimuli responsive and self-healing Zn(ii)-inosine supramolecular metal-organic gel: phase selective gelation and application as a light-responsive Schottky barrier diode. [PDF]

Nanoscale Adv
Singh S, Sharma AK, Rohilla K, Verma N, Sharma B.   +4 more
europepmc   +1 more source

Diffusion‐Driven Targeted Passivation of Selenium Vacancies via an I‐Doped CdS Buffer Layer for Efficient Sb2Se3 Solar Cells

Advanced Science, Volume 13, Issue 31, 4 June 2026.
Iodine incorporation into the CdS buffer layer induces spontaneous anion diffusion and selectively passivates selenium vacancies in Sb2Se3 absorbers. The formation of low‐energy, charge‐neutral ISe defects effectively suppresses non‐radiative recombination, resulting in a substantially enhanced open‐circuit voltage and boosting the device efficiency to
Luyan Shen, Deyang Qin, Er Nie, Jiahua Tao, Hidefumi Akiyama, Junhao Chu, Shaoqiang Chen   +6 more
wiley   +1 more source

Atomically Thin Sn:GaN‐GaN Homojunction for High‐Sensitivity β‐Ray Detection

Rare Metals, Volume 45, Issue 6, June 2026.
ABSTRACT Gallium nitride (GaN), a third‐generation wide‐bandgap semiconductor renowned for its superior radiation tolerance, holds promise for advanced β‐ray detection. Herein, a scalable liquid metal‐assisted in situ synthesis method is presented to fabricate Sn‐doped GaN homojunctions via gallium oxide printing followed by ammonolysis, enabling ...
Weiqing Liu, Wenrong Fan, Zhangwei Xue, Mingyu Li, Yong Shi, Xiaowei Li, Lu Zhang, Chen Su, Jianxiong Shao   +8 more
wiley   +1 more source

Giant Bulk Photovoltaic Effect in Crystal Orientation Restructured Quasi‐Epitaxial BaTiO3 Films on Silicon Substrates

Small, Volume 22, Issue 31, 2 June 2026.
ABSTRACT The bulk photovoltaic (BPV) effect in ferroelectric (FE) materials enables the direct conversion and exchange of information between the optical and electrical domains in applications such as photonic computing and photodetection. Although the above‐bandgap open‐circuit voltage in the FE BPV effect permits a much higher photovoltage in ...
Wenzhong Ji, Teng Lu, Richard F. Webster, David L. Cortie, Felipe Kremer, Li Li, Hua Chen, Terry J. Frankcombe, Robert G. Elliman, Qian Li, Richard D. Tilley, Yun Liu   +11 more
wiley   +1 more source

Anodic TiO2 as a Memristive pH‐Sensing Material

physica status solidi (a), Volume 223, Issue 10, 22 May 2026.
TiO2 is investigated as an interface‐dominated memristive material for novel liquid‐phase pH sensing performed using a crossbar architecture. The devices exhibit electroforming‐free and diode‐like switching behaviour over a broad pH range. With increasing alkalinity, a progressive opening of the hysteresis can be noted in the I‐U response.
Elena Atanasova, Simona Nemeckova, Bhola Nath Pal, Achim Walter Hassel, Andrei Ionut Mardare   +4 more
wiley   +1 more source

The Effect of Transient Ionizing Radiation upon Schottky Barrier Diodes

, 1968
The theory of operation of the Schottky barrier diode was reviewed. The complications caused by a more accurate space charge formulation were discussed.
Schnurr, Robert H.
core  

Prediction of barrier inhomogeneities and carrier transport in Ni-silicided Schottky diode

Based on Quantum Mechanical (QM) carrier transport and the effects of interface states, a theoretical model has been developed to predict the anomalous current-voltage (I-V) characteristics of a non-ideal Ni-silicided Schottky diode at low temperatures ...
Dimitriu CB, Wright NG, O'Neill AG, Chattopadhyay S, Maiti CK, Saha AR, Horsfall AB   +6 more
core  

Fabrication and characterisation of Silicon-Germanium Schottky diode

, 2003
In this project, both the silicon and silicon germanium schottky barrier diode were fabricated and studied. Pt, Ti and W metal were investigated as schottky materials.
Tan, Oscar Aik Poh.
core  

Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. [PDF]

Materials (Basel)
Pu T, Li X, Li L, Ao JP.
europepmc   +1 more source

Electric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and Al_xO_x Guard Ring Structure. [PDF]

Materials (Basel), 2018
Li CY, Cheng MY, Houng MP, Yang CF, Liu J.   +4 more
europepmc   +1 more source