Results 171 to 180 of about 2,560 (228)
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Carbon–Silicon Schottky Barrier Diodes
Small, 2012The simple fabrication of high-performance Schottky barrier diodes between silicon and conductive carbon films (C-Films) is reported. By optimizing the interface, ideality factors as low as n = 1.22 for pyrolytic photoresist films (PPF) have been obtained.
Chanyoung, Yim +4 more
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1998
A Schottky barrier diode consists of a rectifying metal-semiconductor contact with a N-drift region, designed to support the required reverse voltage as shown in Fig. 3.1. Forward conduction in the Schottky diode occurs by the transport of majority carriers (electrons) across the metal-semiconductor barrier Baliga, 1996.
Ranbir Singh, B. Jayant Baliga
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A Schottky barrier diode consists of a rectifying metal-semiconductor contact with a N-drift region, designed to support the required reverse voltage as shown in Fig. 3.1. Forward conduction in the Schottky diode occurs by the transport of majority carriers (electrons) across the metal-semiconductor barrier Baliga, 1996.
Ranbir Singh, B. Jayant Baliga
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Journal of Physics E: Scientific Instruments, 1972
The experiment described was performed by an undergraduate in his final term at the University. A Schottky diode prepared by the evaporation of Au on to n type GaAs was used to measure the donor density profile in the semiconductor and to demonstrate the effects of deeper levels.
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The experiment described was performed by an undergraduate in his final term at the University. A Schottky diode prepared by the evaporation of Au on to n type GaAs was used to measure the donor density profile in the semiconductor and to demonstrate the effects of deeper levels.
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Compact modeling of SiC Schottky barrier diode and its extension to junction barrier Schottky diode
Japanese Journal of Applied Physics, 2018Abstract A compact model applicable for both Schottky barrier diode (SBD) and junction barrier Schottky diode (JBS) structures is developed. The SBD model considers the current due to thermionic emission in the metal/semiconductor junction together with the resistance of the lightly doped drift layer. Extension of the SBD model to JBS
Dondee Navarro +8 more
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A Multifunctional Porous Organic Schottky Barrier Diode
Angewandte Chemie, 2012Mesoporous materials: A multifunctional porous organic material (ANPPIT; see picture) has been synthesized and characterized. Multifunctionality of the compound has been determined from nitrogen adsorption, guest-dependent luminescence, and electrical conductivity measurements.
Sasanka, Dalapati +6 more
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Characteristics of aluminum-silicon schottky barrier diode
Solid-State Electronics, 1970Abstract Aluminum n -type silicon Schottky barrier diodes with near-ideal characteristics have recently been developed. In this paper the characteristics of such a Schottky barrier are discussed. The I–V characteristics agree well with the theoretical thermionic emission model.
Yu, A. Y. C., Mead, C. A.
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Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights
Journal of Applied Physics, 1987A technique for fabricating controlled Schottky barrier heights to GaAs over the entire band gap is demonstrated. Thin, highly doped semiconductor layers at the metal-semiconductor interface allowed the reproducible control of the effective barrier height on n-type GaAs from near zero (i.e., ohmic behavior at 300 K) to 1.33 eV (the band gap equals 1.43
S. J. Eglash +7 more
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1992
Schottky barriers and pn-junctions are the simplest active solid state devices. Their rectifying characteristics as well as the ability to expand or contract their space charge layer with bias is useful in many applications. With appropriate material and doping design, a wide variety of desirable operating characteristics can be obtained.
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Schottky barriers and pn-junctions are the simplest active solid state devices. Their rectifying characteristics as well as the ability to expand or contract their space charge layer with bias is useful in many applications. With appropriate material and doping design, a wide variety of desirable operating characteristics can be obtained.
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Photocurrents in P3MeT Schottky barrier diodes
Synthetic Metals, 1999Abstract The photocurrent action spectrum of a Schottky diode formed from electrodeposited poly(3-methylthiophene) is shown to follow closely the UV-visible absorption spectrum. At low forward bias, the peak photocurrent asymptotes to the expected square-root dependence on total potential, Vt, across the depletion region.
Jones, G. W. +2 more
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Planar Mesa Schottky Barrier Diode
IBM Journal of Research and Development, 1971Planar silicon technology has been used to fabricate mesa Schottky barrier diodesh with high breakdown voltages. This method proves to be superior to alternate methods used to increase the breakdown voltage of Schottky diodes. The processing techniques and characteristics of mesa Schottky diodes are described in this paper.
N. G. Anantha, K. G. Ashar
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