Results 171 to 180 of about 778,720 (285)

Molecularly Regulated Dynamic Interfaces in 3D/2D Perovskites Enabled by Functional Pyridinium Ionic Liquids

Small, EarlyView.
1‐butyl‐4‐methylpyridinium tetrafluoroborate (BMPyBF4) interacts with excess PbI2 during film formation, driving the formation of a low‐dimensional perovskite phase and enabling the self‐organization of a 3D/2D interfacial structure. This molecularly regulated interface suppresses defect‐mediated recombination and facilitates interfacial charge ...
Bulent Alkan, Faranak Sadegh, Ji‐Youn Seo, Thanh‐Danh Nguyen, Muhittin Unal, Daniel Prochowicz, Pankaj Yadav, Mucahit Yilmaz, Servet Turan, Seckin Akin   +9 more
wiley   +1 more source

Low‐Complexity Phase–Transition‐Based VO2 Transmissive Reconfigurable Intelligent Surface for Indoor Millimeter‐Wave Communications

Nanophotonics, Volume 15, Issue 17, 11 September 2026.
We demonstrate a VO2‐based transmissive reconfigurable intelligent surface for indoor millimeter‐wave communication. The TRIS replaces conventional PIN and varactor diodes with geometrically tailored VO2 switches, enabling transmitted phase control through phase‐transition‐based switching.
Junghyeon Kim, Sumin Bark, Minjae Lee, Sungjoon Lim   +3 more
wiley   +1 more source

Comparison of inhomogeneous Schottky barrier modeling approaches in SiC polytypes. [PDF]

PLoS One
Mekaret F, Rabehi A, Zebentout B, Tizi S, Douara A, Guermoui M, Tibermacine IE, Alharbi AH, El-Kenawy EM, Habib M, Benamara Z.   +10 more
europepmc   +1 more source

Modeling of Diamond Trench Metal Oxide Semiconductor Barrier Schottky Rectifier Based on Dynamic Reverse Bias Simulation Framework

physica status solidi (a), Volume 223, Issue 17, 9 September 2026.
Time‐resolved mixed‐mode technology computer aided design simulations reveal that the transient ionization response of deep boron acceptors fundamentally modifies the charge‐sharing mechanism in diamond TMBS rectifiers. Consequently, the optimum trench geometry under dynamic reverse‐bias conditions differs significantly from conventional quasi‐static ...
Martin Kah, Nazareno Donato, Ethan Gardner, Nicolas Rouger, Rebecca Watkins, Calum Henderson, Jingfan Yang, Richard Jackman, Florin Udrea   +8 more
wiley   +1 more source

Imaging the Thickness‐Dependent Formation of Schottky Barriers in Metal–Semiconductor van der Waals Heterostructures

Advanced Functional Materials, Volume 36, Issue 74, 14 September 2026.
Using nanobeam photoemission, we demonstrate imaging of the in‐plane and out‐of‐plane electric field landscape within a metal–semiconductor van der Waals heterostructure. We provide evidence for Schottky barrier formation that depends on the semiconductor thickness. ABSTRACT Achieving high‐performance optoelectronic devices based on two‐dimensional van
Dario Mastrippolito, Mariarosa Cavallo, Marco Paye, Clement Gureghian, Albin Colle, Jiho Roh, Dipak Maity, Clemence Villefroy, Erwan Dandeu, Herve Cruguel, Stephane Lorcy, Marie Hervé, James K. Utterback, Pavel Dudin, Johan Biscaras, José Avila, Emmanuel Lhuillier, Debora Pierucci   +17 more
wiley   +1 more source

Localized States' Role in MoS₂ Few-Layer Device: A Study by Schottky Capacitance Spectroscopy and Thermally Stimulated Current. [PDF]

ACS Omega
Gouveia RC, Cichetto L, Ferreira de Almeida L, Teodoro MD, Chiquito AJ.   +4 more
europepmc   +1 more source

Electric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and Al_xO_x Guard Ring Structure. [PDF]

Materials (Basel), 2018
Li CY, Cheng MY, Houng MP, Yang CF, Liu J.   +4 more
europepmc   +1 more source

Chemical Control of Space Charge Barriers and Grain Boundary Resistances in Polycrystalline Ionic Conductors

Advanced Functional Materials, Volume 36, Issue 74, 14 September 2026.
Grain boundaries (GBs) in polycrystalline materials often block charge transport and drive degradation. Using Gd‐doped CeO2 as a model electrolyte used in fuel/electrolysis cells, we developed a core‐shell infiltration method to selectively modify GB chemistry and space charge potential, achieving orders‐of‐magnitude ionic conductivity changes.
Z. Sha, T. Defferriere, C. Gilgenbach, J. M. LeBeau, I. Lubomirsky, H. L. Tuller   +5 more
wiley   +1 more source

TCAD investigation of β-Ga₂O₃ junction barrier Schottky diode with p-Cr₂O₃ heterojunction wells. [PDF]

RSC Adv
Than PH, Than TQ, Takaki Y.
europepmc   +1 more source

Multi‐Level Saturation Current Encoding in Two‐Dimensional Ferroelectric Source‐Gated Transistors

Advanced Functional Materials, Volume 36, Issue 76, 21 September 2026.
A 2D ferroelectric source‐gated transistor (SGT) operates with a non‐volatile, multi‐level saturation current controlled by ferroelectric polarization. Operando electrostatic and photocurrent imaging link the current limitation to source‐side depletion, identifying saturation current as a programmable, read‐bias‐tolerant device parameter toward low ...
Joon‐Seok Kim, Ting‐Ching Chu, Zhehao Zhu, Lincoln J. Lauhon   +3 more
wiley   +1 more source