Results 161 to 170 of about 778,720 (285)
An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application. [PDF]
Xue H +5 more
europepmc +1 more source
A Schottky photodiode based on (Al0.14Ga0.86)2O3 was developed, in which the sensing and processing functions were temporally decoupled through bias voltage modulation. By integrating single‐pixel imaging with a reservoir computing architecture, a comprehensive intelligent vision system was constructed.
Hongbin Wang +10 more
wiley +1 more source
A multistimuli responsive and self-healing Zn(ii)-inosine supramolecular metal-organic gel: phase selective gelation and application as a light-responsive Schottky barrier diode. [PDF]
Singh S +4 more
europepmc +1 more source
This review provides a comprehensive perspective on p‐doping in two‐dimensional transition metal dichalcogenides, linking the origins of carrier polarity, doping mechanisms, verification methodologies, and device‐level impacts. By establishing correlations among atomic‐scale doping, carrier modulation, and device functionality, it offers practical ...
Seo Yeon Han +4 more
wiley +1 more source
A 1.6 kV Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10-5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination. [PDF]
Zhou X +5 more
europepmc +1 more source
Impacts of Fermi Level Pinning at Hole‐Selective Contacts in CdSeTe/CdTe Solar Cells
Experimental measurements and SCAPS simulations consistently demonstrate dark–light J–V non‐superposition in CdSeTe/CdTe solar cells. The results indicate that donor‐like interface states at the ZnTe/CdTe contact pin the Fermi level, thereby producing a parasitic built‐in voltage that accounts for the observed non‐superposition (take‐off) behavior ...
Ariful Islam +5 more
wiley +1 more source
This study presents a photodetector based on atomically thin MoS2 on an InP substrate, forming an n‐MoS2/p‐InP type‐II staggered heterojunction. The device exhibits excellent rectifying properties with an ideality factor of 1.57 and achieves a peak photoresponsivity of 960 mA W−1, while MoS2 provides stable passivation for InP. III–V semiconductors are
Dong Hwi Choi +8 more
wiley +1 more source
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong +9 more
wiley +1 more source
Contactless Detection of Giant Helicity‐Dependent Photovoltage in Chiral 2D Perovskites
A novel contactless probe—circularly polarized time‐resolved surface photovoltage spectroscopy is demonstrated to evaluate helicity‐dependent charge separation dynamics without the need for electrical contacts. Application of this novel methodology to chiral 2D perovskites reveals giant transient surface photovoltage anisotropy.
Joanna Dehnel +4 more
wiley +1 more source
Real‐world graph data are directly mapped onto an mCBA, enabling node similarity to be computed through a single current readout. Strongly nonlinear devices suppress long‐range multi‐hop contributions while preserving local connectivity, whereas weakly nonlinear devices allow excessive signal propagation.
Jae‐Hyun Lee +7 more
wiley +1 more source

