Results 161 to 170 of about 2,560 (228)

Plasmon-Induced Graphene/Silicon Schottky Junctions for Ultrasensitive Gas Sensing. [PDF]

ACS Sens
Drozdowska K, Smulko J, Welearegay T, Österlund L, Rumyantsev S.   +4 more
europepmc   +1 more source

Beyond Point-like Defects in Bulk Semiconductors: Junction Spectroscopy Techniques for Perovskite Solar Cells and 2D Materials. [PDF]

Nanomaterials (Basel)
Capan I.
europepmc   +1 more source

Capacitive piezotronics. [PDF]

Nat Commun
Xu L, Zhang Z, Wang G, He Y, Zhai J, Hu W, Chen L, Wang L, Liu S, Wang ZL.   +9 more
europepmc   +1 more source

The ESD Robustness and Protection Technology of P-GaN HEMT. [PDF]

Micromachines (Basel)
Shi Y, Chen Y, He L, Chen X, Chen Y, Lu G.   +5 more
europepmc   +1 more source

Multiscale Modeling of the RESET Sweep in a Single-Layer MoS₂ Atomristor Using Density Functional Theory. [PDF]

ACS Omega
Turfanda A, Gagliardi A.
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2D Indium Oxide at the Epitaxial Graphene/SIC Interface: Synthesis, Structure, Properties, and Devices. [PDF]

Adv Mater
Turker F, Xu B, Dong C, Labella M, Nayir N, Sheremetyeva N, Trdinich ZJ, Zhang D, Adabasi G, Pourbahari B, Lu LS, Auker WE, Wang K, Baykara M, Meunier V, Bassim N, van Duin ACT, Crespi VH, Robinson JA.   +18 more
europepmc   +1 more source

Modulating Persistent Photoconductivity through Barrier Engineering for High-performance and Multifunctional Two-dimensional Optoelectronic Devices. [PDF]

Adv Sci (Weinh)
Huo P, Zhang X, Cui X, Wang Y, Zhou D, Man B, Jeon I, Yoo WJ, Yang C.   +8 more
europepmc   +1 more source

Ultrafast Self-Driven WSe₂ Photodetectors with Bottom Schottky Contacts. [PDF]

Adv Sci (Weinh)
Li J, Wang Z, Jian J, Weng Z, Wu Q, Zhou X, Lin L, Gu X, Xiao P, Nan H, Xiao S.   +10 more
europepmc   +1 more source

Enabling state-of-the-art sensitivity of patch-antenna-coupled TeraFETs for the >1-THz frequency band using superstrate lenses

Holstein J, But DB, Krysl A, Lisauskas A, Roskos HG.   +4 more
europepmc   +1 more source

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Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes

Journal of Nanoscience and Nanotechnology, 2021
We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a temperature range from 293 K to 573 K. The thermal sensitivity of the devices was calculated from the slope of the forward voltage versus temperature plot.
Seong-Ji, Min, Michael A, Schweitz, Ngoc Thi, Nguyen, Sang-Mo, Koo   +3 more
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