Results 161 to 170 of about 5,171 (275)

Analysis of Punch-Through Breakdown Voltages in 3C-SiC Schottky Barrier Diode Using Gaussian Profile for 200µm Thick Wafers

, 2014
ME, ECEDNormally Schottky Barrier diodes are designed by using a uniform doping profile of the semiconductor material used. However, the higher breakdown voltage can be achieved by using non-uniform doping profiles, namely, linearly graded profile ...
Nishad, Pratibha
core  

Efficient and Durable Semitransparent Perovskite Solar Cells for the Application in 4T Perovskite/c‐Si Tandem Devices

Progress in Photovoltaics: Research and Applications, Volume 34, Issue 7, Page 887-905, July 2026.
We present an optimized fabrication strategy incorporating a solution‐processed SnO2 buffer layer that prevents sputter‐induced damage during TCO deposition, enabling semitransparent perovskite solar cells with 21.87% efficiency, 27.15% in tandem, and exceptional long‐term stability under continuous illumination and outdoor conditions.
Satish Bykkam, Katarzyna Cudo, Kamil Trocki, Shih‐Han Huang, Chia‐Feng Li, Łukasz Haryński, Sudip Malick, Beata Bochentyn, Jędrzej Szmytkowski, Stanislaw Czapp, Katarzyna Grochowska, Katarzyna Siuzdak, Damian Glowienka   +12 more
wiley   +1 more source

An Overview of the Ultrawide Bandgap Ga₂O₃ Semiconductor-Based Schottky Barrier Diode for Power Electronics Application. [PDF]

Nanoscale Res Lett, 2018
Xue H, He Q, Jian G, Long S, Pang T, Liu M.   +5 more
europepmc   +1 more source

Cross‐Layer Molecular Design for Coherent Interface Passivation in Rigid and Flexible Perovskite Solar Cells

Advanced Functional Materials, Volume 36, Issue 44, 1 June 2026.
A cross‐layer passivation strategy employing molecularly designed thiazol‐5‐ylmethanamine hydrochloride (TMACl) enables coherent defect regulation at the SnO2/perovskite interface, stabilizes both layers, promotes phase‐pure α‐FAPbI3 formation, and enhances charge extraction, delivering PCEs of 26.44% in rigid and 24.72% in flexible perovskite solar ...
Fan Shen, Chenxu Zhao, Lianghui Li, Jia Xu, Jiale Chen, Xunhui Wang, Huijing Liu, Pengchen Zou, Xuewei Liu, Yao Fu, Huifang Han, Kun Lang, Yijun Wang, Yahan Wu, Xu Pan, Zhaofu Fei, Jianxi Yao   +16 more
wiley   +1 more source

Photoconductive Gain Behavior of Ni/β-Ga₂O₃ Schottky Barrier Diode-Based UV Detectors. [PDF]

Micromachines (Basel)
Kopyev VV, Yakovlev NN, Tsymbalov AV, Almaev DA, Kosmachev PV.   +4 more
europepmc   +1 more source

Impact of Oxygen Plasma Pre‐Treatment on Thermal Oxidation and Reliability of SiO2 on 4H‐SiC

Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.
We investigate how oxygen plasma pre‐treatment affects the thermal oxidation of silicon carbide. While plasma modification increases growth rates by 84%, it reduces dielectric breakdown strength by 18%. Our findings reveal that although plasma improves the interface state density, it introduces structural damage, highlighting a critical trade‐off ...
Chezhiyan Nanjappan, Michael Stöger‐Pollach, Georg Pfusterschmied, Ulrich Schmid   +3 more
wiley   +1 more source

Supramolecular Ni(II)-Selective Gel Assembly toward Construction of a Schottky Barrier Diode. [PDF]

ACS Omega
Singh V, Chauhan DK, Pandey R.
europepmc   +1 more source

Enhancing Stability of Few‐Layer Black Phosphorus (FLBP) Through Nitrocellulose Coating: A Robust Defense Mechanism Against Degradation

Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.
In this research, a simple and scalable strategy for protection of a few‐layer black phosphorus (FLBP) with a cellulose nitrate‐based material is presented. The FLBP is structurally and morphologically characterized. The FLBP stability with and without nitrocellulose protection is monitored by interferometric method, surface profile examination, and ...
Paweł Jakóbczyk, Michał Suplewski, Jacek Łubiński, Jakub Gierowski, Monika Kosowska, Mirosław Sawczak, Mattia Pierpaoli, Filip Janiak, Małgorzata Szczerska   +8 more
wiley   +1 more source

A Novel 4H-SiC SGT MOSFET with Improved P+ Shielding Region and Integrated Schottky Barrier Diode. [PDF]

Micromachines (Basel)
Cao X, Liu J, An Y, Ren X, Yin Z.
europepmc   +1 more source

Schottky Barrier Engineering in n‐Type Organic Source‐Gated Transistors Enabling High Conductance

Advanced Materials Technologies, Volume 11, Issue 11, 5 June 2026.
This study introduces a modified source electrode architecture for n‐type organic source‐gated transistors (OSGTs). By integrating Schottky and Ohmic contact regions, the design achieves a thinner depletion envelope, enhancing mobility nearly tenfold and reducing threshold voltage.
Yonghee Kim, Jae Won Lee, Wonbeen Jeong, Eun Kwang Lee, Jiyoul Lee   +4 more
wiley   +1 more source