Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction. [PDF]
Nanoscale Res Lett, 2020 Sun T, Luo X, Wei J, Yang C, Zhang B.
europepmc +1 more source
Current-voltage modeling of bilayer graphene nanoribbon Schottky diode
, 2011 This paper is all about the current-voltage modeling of Bilayer Graphene Nanoribbons (BGNRs) Schottky Diode. The metal semiconductor devices were used in the beginning of the year 1900s. We can make a point contact diode by touching a metallic whisker to
Mohammad Taghi Ahmadi +12 more
core +1 more source
Borophene‐based sensing platforms: Pioneering ultrasensitive detection
FlexMat, EarlyView.Schematic Diagram of Performance Optimization Strategies and Sensing Application Characteristics of Two‐Dimensional Boron‐Based Materials in Novel Sensors. Abstract Borophene is an emerging two‐dimensional (2D) material. Since significant breakthroughs were achieved in the experimental synthesis of borophene, the exploration and development of ...
Chi Yuan, Yanpeng Ji, Yi Liu, Guoan Tai
wiley +1 more source
Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics. [PDF]
Nanomaterials (Basel), 2020 Sun Y +7 more
europepmc +1 more source
Impact of Nickel Diffusion on Leakage Current Degradation in β‐Ga2O3 Schottky Barrier Diodes
Information &Functional Materials, EarlyView.The diffusion of Ni atoms during Schottky electrode fabrication induces localized stress defects in β‐Ga₂O₃ substrates, which act as primary reverse leakage pathways in SBDs. Elucidating this mechanism provides critical guidance for optimizing electrode composition in high‐performance β‐Ga₂O₃ electronics.
Ziyi Wang +9 more
wiley +1 more source
CVD diamond Schottky barrier diode, carrying out and characterization
, 2010 International audienceA p-type diamond Schottky barrier diode (SBD) on homoepitaxial CVD diamond is presented.The technologic steps required to carry out the experimental device are described in this paper.
Issaoui, R. +6 more
core +1 more source
Wide‐Bandgap Semiconductor‐Based Neuromorphic Computing
Information &Functional Materials, EarlyView.Wide‐bandgap semiconductors enable robust, low‐power neuromorphic devices for extreme environments. This review outlines material advantages, device physics, integration, and future directions for next‐generation brain‐inspired computing. ABSTRACT Neuromorphic computing has emerged as a promising paradigm to overcome the energy inefficiency and data ...
Hongyu Tang +6 more
wiley +1 more source
PtTe2 interface engineering for enhanced near‐infrared photoresponse in black silicon photodetectors
InfoMat, EarlyView.Highly responsive near‐infrared (NIR) photodetectors are essential for advanced photoelectric systems. In this work, a high‐responsivity NIR photodetector is developed by integrating a PtTe2/black silicon (B‐Si) heterostructure into a Si p‐i‐n diode, where B‐Si introduces sub‐bandgap defect states to enhance NIR absorption and the PtTe2 layer induces ...
Guanyu Mi +12 more
wiley +1 more source
Fabrication of a Schottky diode
The Schottky diode is a circuit component with exhaustive applications in microwaves, GPS tracking, and solar panels. Unlike rectifying diodes formed by a PN junction, a Schottky diode is established when a metal is joined to a doped semiconductor.
Wang, Leonardo
core
MXenes in Next‐Generation Light‐Emitting Diodes: Innovations, Challenges, and Future Prospects
Laser &Photonics Reviews, EarlyView.This review provides a systematic and critical overview of MXene integration in LEDs from their synthesis strategies and electronic characteristics to their roles as electrodes, interlayers, and emissive materials. It also explores the emerging prospects and challenges for MXene‐enabled flexible, transparent, and intelligent display technologies that ...
Awais Ali +9 more
wiley +1 more source