Results 141 to 150 of about 778,720 (285)

Low‐Dimensional Materials and Van Der Waals Heterostructures for Energy Application: A Comprehensive Review

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam, Sajjad Ali, Pir Muhammad Ismail, ABM Sharif Hossain   +3 more
wiley   +1 more source

Gas–Solid Interface‐Assisted Growth of Organic Semiconductor Single Crystals: Dimensions, Structures, Mechanisms, and Applications

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Gas–solid interface‐assisted growth strategies have unlocked precise control over crystal structure, morphology, dimension, and molecular packing. The obtained organic semiconductor single crystals represent the ideal candidates for high‐performance organic optoelectronic devices.
Tingyi Yan, Qing Tian, Jinwen Wang, Ke Jiang, Yage Han, Yuanzhuang Ren, Lingyun Li, Xiujuan Zhang, Jiansheng Jie   +8 more
wiley   +1 more source

Transparent and Photovoltaic Water–Semiconductor Interface for Ultra‐Low‐Light Omnidirectional Photodetection

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
A self‐powered photodetector using a static water–ZnO interface forms a Schottky‐like photovoltaic junction for ultra‐low‐light sensing. It delivers strong photoresponse, 360° detection, and flexibility, advancing transparent and sustainable water‐based optoelectronics.
Sanh Vo Thi, Malkeshkumar Patel, Sourov Hossain, Md Arifur Rahman Barno, Ngoc Le Trinh, Han‐Bo‐Ram Lee, Yu Kwon Kim, Joondong Kim   +7 more
wiley   +1 more source

Achievement of low turn-on voltage in Ga2O3 Schottky and heterojunction hybrid rectifiers using W/Au anode contact

AIP Advances
The use of the low work function (4.5 eV) tungsten (W) as a rectifying contact was studied to obtain low on-voltages in W/Ga2O3 Schottky rectifiers and NiO/Ga2O3 heterojunction rectifiers that were simultaneously fabricated on a single wafer. The devices
Chao-Ching Chiang, Jian-Sian Li, Hsiao-Hsuan Wan, Fan Ren, Stephen J. Pearton   +4 more
doaj   +1 more source

Influence of the semi-insulating GaAs Schottky pad on the Schottky barrier in the active layer

, 1996
The influence of the sidegate voltage on the Schottky barrier in the ion-implanted active layer via the Schottky pad on the semi-insulating GaAs substrate was observed, and the mechanism for such an influence was proposed.
Wu J, Wu J CHINESE ACAD SCIINST SEMICONDSEMICOND MAT SCI LABPOB 912BEIJING 100083PEOPLES R CHINA., Lin LY, Zhang M, Wang ZG, Han CB, Bai SW   +6 more
core  

Recent Progress of Metal Halide Perovskite‐Based S‐Scheme Heterojunction for Solar Energy Conversion

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Recent advances in metal halide perovskite‐based S‐scheme photocatalytic heterojunctions are systematically reviewed in this work. Synthetic protocols, state‐of‐the‐art characterizations for tracking interfacial charge transfer, and their diverse photocatalytic applications are thoroughly explored.
Xinhe Wu, Shujie Yin, Jiachao Xu, Lihong Tan, Guohong Wang   +4 more
wiley   +1 more source

ZnO Nanowires by Chemical Bath Deposition: A Review on Doping and Functional Devices

Electron, EarlyView.
This review reports the most recent and well‐established state‐of‐the‐art and scientific challenges related to the doping of ZnO nanowires by chemical bath deposition, encompassing native point and hydrogen‐related defects, as well as extrinsic dopants.
Clément Lausecker, Adrien Baillard, Estelle Appert, Vincent Consonni   +3 more
wiley   +1 more source

Light‐Modulated Exchange Bias in Multiferroic Heterostructures

Electron, EarlyView.
In this article, exchange bias and magnetization are modulated with visible light at room temperature in PMN‐PZT/FeGa/IrMn multiferroic heterostructures. Photostrictive effect is the main mechanism leading to the modulation of magnetic anisotropy and interfacial exchange bias coupling between the ferromagnetic and antiferromagnetic layers.
Huan Tan, Zheng Ma, Cynthia Bou Karroum, Matthieu Liparo, Jean‐Philippe Jay, David Spenato, David T. Dekadjevi, Luís Martínez Armesto, Alberto Quintana, Jordi Sort   +9 more
wiley   +1 more source

Reconfigurable Logic Operation of MoTe2 Homojunction Enabled by Staggered Double‐Sided Contacts

Electron, EarlyView.
A gap adjacent to an electrode in the MoTe2 SDC transistor enables polarity reconfiguration, switching between p‐type and n‐type depending on bias polarity. This reconfiguration is ensured when the absolute bias voltage is less than the gate voltage, yielding a near‐ideal subthreshold swing of 67.6 mV/dec and on/off ratios of 104–106.
Jun‐Qiang Zhang, Jia‐Yi Zhang, Jiong‐Tao Zhang, Xu Zeng, Yuntian Wu, Lili He, Xiangyu Hou, Xiaoguang Luo   +7 more
wiley   +1 more source

Borophene‐based sensing platforms: Pioneering ultrasensitive detection

FlexMat, EarlyView.
Schematic Diagram of Performance Optimization Strategies and Sensing Application Characteristics of Two‐Dimensional Boron‐Based Materials in Novel Sensors. Abstract Borophene is an emerging two‐dimensional (2D) material. Since significant breakthroughs were achieved in the experimental synthesis of borophene, the exploration and development of ...
Chi Yuan, Yanpeng Ji, Yi Liu, Guoan Tai
wiley   +1 more source