Results 121 to 130 of about 778,720 (285)

Current Transport Behaviour of Au/n-GaAs Schottky Diodes Grown on Ge Substrate With Different Epitaxial Layer Thickness Over a Wide Temperature Range [PDF]

Журнал нано- та електронної фізики, 2011
The work presents temperature dependent forward and reverse current-voltage (I-V) analyses of n-GaAs/Au Schottky Diodes grown on n+ Ge substrate with different epitaxial layer thicknesses.
N. Padha, R. Sachdeva, R. Sihotra, S.B. Krupanidhi   +3 more
doaj  

Selenocyanate Driven Organic Cations Homogenization in Wide‐Bandgap Perovskite

Advanced Energy Materials, EarlyView.
Selenocyanate pseudohalide doping stabilizes 1.66 eV wide‐bandgap formamidinium (FA)‐based perovskite lattices via strong FA+ hydrogen bonding and matched ionic radii. Uniform cation distribution and suppressed ion migration reduces defect losses, delivering >24% single‐junction efficiency and 32.66% perovskite/silicon tandem performance with ...
Zhi‐Wen Gao, Jun Fang, Yehui Wen, Longbin Qiu, Jiajia Zhang, Yong Wang, Wallace C. H. Choy   +6 more
wiley   +1 more source

Experimentally Determined Spatiotemporal Charge Carrier Dynamics for the Development of Particulate Photocatalysts

Advanced Energy Materials, EarlyView.
This review looks at the different experimental techniques that measure spatiotemporal charge carrier dynamics. This information is viewed in the context of particulate photocatalysts, outlining the insights these techniques provide and how they advance our understanding.
Sutripto Khasnabis, Robert Godin
wiley   +1 more source

Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics

Nanomaterials
In this study, a novel silicon carbide (SiC) double-trench MOSFET (DT-MOS) combined Schottky barrier diode (SBD) and MOS-channel diode (MCD) is proposed and investigated using TCAD simulations. The integrated MCD helps inactivate the parasitic body diode
Peiran Wang, Chenglong Li, Chenkai Deng, Qinhan Yang, Shoucheng Xu, Xinyi Tang, Ziyang Wang, Wenchuan Tao, Nick Tao, Qing Wang, Hongyu Yu   +10 more
doaj   +1 more source

Holistic Top‐to‐Bottom Film Restructuring to Achieve Highly Stable Unencapsulated Perovskite Solar Cells

Advanced Energy Materials, EarlyView.
A novel top‐to‐bottom film restructuring strategy is applied to perovskite films, taking advantage of high penetration of vapor‐phase ligand. A gradient‐distributed 2D perovskite structure is built up from top surface to film bulk, meanwhile, inhomogeneity at the buried interface is mitigated, which leads to high quality perovskite films with improved ...
Zhengyan Jiang, Jiayun Sun, Zhixian Zhang, Peide Zhu, Wenjun Liu, Biao Zhou, Hong Zhang, Baomin Xu, Wallace C. H. Choy   +8 more
wiley   +1 more source

Spintronic and plasmonic applications of electrodeposition on semiconductors

, 2009
In this thesis, metal electrodeposition on semiconductor substrates is investigated. We show that electrodeposition of metals on n-type Si and Ge is an excellent method to create Schottky barriers and that this method has a number of unique advantages ...
Li, X.
core   +1 more source

Free Charge Generation in Organic Photoconversion Devices–the Impact of Electrostatic Potentials

Advanced Energy Materials, EarlyView.
Free charge generation in organic photovoltaic and photodetector devices typically requires an external driving force to separate bound excitons formed upon photoexcitation. This review details how electrostatic potentials, arising from molecular charge distributions in organic semiconductors, can impact interfacial energetic landscapes and promote ...
Emily J. Yang, Song Yi Park, Vick Y. Qiu, Ji‐Seon Kim   +3 more
wiley   +1 more source

STRUCTURE AND techological improvments of tmbs diodes

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019
An improved structure and technological process of trench MOS barrier Schottky (TMBS) diodes are developed and studied by 2D-simulation. The experiments performed demonstrated simplification of the technology by elimination of one photolithography and ...
V. S. Kotov, N. F. Golubev, V. E. Borisenko   +2 more
doaj  

Fabrication and Characterization of Al/p-CuInAlSe2 Thin Film Schottky Diodes [PDF]

Журнал нано- та електронної фізики, 2013
Al/p-CuInAlSe2 polycrystalline schottky diodes fabricated by flash evaporation method were undertaken for their electrical analysis at room temperature. Diode parameters of the undertaken diodes were then derived from the current-voltage (I-V) as well as
Usha Parihar, N. Padha, C.J. Panchal
doaj  

Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode

, 2016
Temperature-dependent electrical transport characteristics of exfoliated graphene/GaN Schottky diodes are investigated and compared with conventional Ni/GaN Schottky diodes.
Ranjit Kashid (2564395), Ashutosh Kumar (226539), Arindam Ghosh (1440244), Rajendra Singh (111049), Vikram Kumar (2564392)   +4 more
core   +1 more source