Results 121 to 130 of about 5,171 (275)
Key Challenges for Commercializing Perovskite–Silicon Tandem Solar Cells
This review discusses the scientific and technological challenges in advancing perovskite–silicon tandem solar cells (PSTSCs) from lab‐scale to commercial viability, focusing on long‐term stability, scalability, and economic feasibility. Key issues include intrinsic and extrinsic degradation factors, installation conditions, environmental impacts, and ...
Bilal Mehmood +16 more
wiley +1 more source
Current Transport Behaviour of Au/n-GaAs Schottky Diodes Grown on Ge Substrate With Different Epitaxial Layer Thickness Over a Wide Temperature Range [PDF]
The work presents temperature dependent forward and reverse current-voltage (I-V) analyses of n-GaAs/Au Schottky Diodes grown on n+ Ge substrate with different epitaxial layer thicknesses.
N. Padha +3 more
doaj
Parameter determination of the Schottky barrier diode using by artificial bee colony algorithm
15 June 2011 through 18 June 2011 -- Istanbul-Kadikoy -- 85879In this paper, a new method based on the Artificial Bee Colony (ABC) for determining the Schottky barrier height (?b), ideality factor (n) and series resistance (RS) of a Schottky barrier ...
Nurhan Karaboga +8 more
core +1 more source
A visible‐light‐driven ambient photocatalytic method in‐situ fabricates Co/CoP‐x and Co/CoP@rGO heterojunction with enhanced charge separation, enabling highly efficient relayed electrocatalytic NOx− reduction to NH3 with outstanding Faraday efficiency and ammonia productivity.
Xin Zhao +7 more
wiley +1 more source
Effect of deep impurity levels on Schottky barrier diode characteristics
In the presence of an arbitrary number of deep donor levels volt-ampere and volt-farad characteristics are obtained for the Schottky barrier diode which contains a thin dielectric layer between the metal and the ...
Sheka, D. +3 more
core
The sequential formation of Ag2Se and AgSbSe2 phases at the Sb2Se3/Mo interface upon Ag incorporation in co‐evaporated Sb2Se3 solar cells promotes grain growth and defect passivation. These newly formed intermediate phases enhance crystallinity and suppress recombination, leading to significant improvements in open‐circuit voltage, fill factor, and ...
Van‐Quy Hoang +16 more
wiley +1 more source
In this study, a novel silicon carbide (SiC) double-trench MOSFET (DT-MOS) combined Schottky barrier diode (SBD) and MOS-channel diode (MCD) is proposed and investigated using TCAD simulations. The integrated MCD helps inactivate the parasitic body diode
Peiran Wang +10 more
doaj +1 more source
Effect of CO on characteristics of AlGaN/GaN Schottky diode
Pt Schottky diode gas sensors for CO are fabricated using AlGaN/ GaN high electron mobility transistor ( HEMTs) structure. The diodes show a remarkable sensor signal (3 mA, in N-2; 2mA in air ambient) biased 2V after 1% CO is introduced at 50 degrees C ...
Hu, GX +10 more
core
(rutile)/n–Si Schottky barrier diode
The purpose of this study is to analyze interface states (N-ss) in Au/TiO2(Rutile)/n-Si Schottky barrier diodes (SBDs). TiO2 was deposited on a n-Si substrate by reactive magnetron sputtering and annealed at 900 degrees C for 4 h in atmosphere to obtain ...
U. Aydemir +15 more
core +1 more source
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam +3 more
wiley +1 more source

