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Photoresponsivity of ZnO Schottky barrier diodes
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2006We report on the photoresponsivity of ZnO Schottky barrier diodes grown on (0001) GaN∕Al2O3 substrates by plasma-assisted molecular-beam epitaxy. First, ZnO Schottky barrier diodes show a reverse saturation current of ∼10−8A in the dark, and they present a large current buildup of ∼103A under ultraviolet light illumination, with maintaining stable ...
D. C. Oh +5 more
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Aging effects in GaAs Schottky barrier diodes
27th Annual Proceedings., International Reliability Physics Symposium, 1989The stability of the barrier height of Au/W/GaAs and Au/Pt/Ti/GaAs Schottky barriers under long-term biasing conditions is discussed. Both barrier types exhibit decreases in barrier height under long-term reverse bias conditions, with the changes seen for the Au/W/GaAs diodes (30-50 MeV) much greater than those for the Au/Pt/Ti/GaAs diodes (5 MeV). The
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Schottky barrier diodes on 3C-SiC
Applied Physics Letters, 1985Schottky barrier contacts have been made on n-type 3C-SiC epitaxially grown by chemical vapor deposition, and their characteristics were studied by the capacitance and photoresponse measurements. By evaporating Au onto chemically etched surfaces of 3C-SiC, good quality Schottky barrier junctions have been obtained.
S. Yoshida +4 more
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Low storage Schottky barrier diode transistors
1968 International Electron Devices Meeting, 1968Nongold doped transistors can exhibit low storage times if they are prevented from going into heavy saturation. A Schottky barrier diode placed across the collector-base junction can be used to control transistor storage times. Such a device is referred to as a Schottky barrier diode transistor (SBDT).
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Microwave Schottky Barrier Diodes
1984Point contact diodes have been in use for many decades for mixer and detector application from uhf through millimeter-wave frequencies. The first published paper on the subject appeared in 1874 when Braun reported the asymmetrical nature of conduction between metal points and crystals. Point contacts are relatively unsophisticated devices consisting of
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Effect of Aluminum doping on potential barrier of gold-ZnO-Si Schottky barrier diode
Materials Today: Proceedings, 2021Pallavi Gupta +2 more
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