Results 91 to 100 of about 5,171 (275)
High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment
AIP Advances, 2019 This paper reports on a high-voltage vertical GaN Schottky barrier diode (SBD) using fluorine (F) ion implantation treatment. Compared with the GaN SBD without F implantation, this SBD effectively enhanced the breakdown voltage from 155V to 775V and ...
Zirui Liu +6 more
doaj +1 more source
A Novel 183GHz Subharmonic Schottky Diode Mixer
, 1992 PhDThe technique of microwave . limb sounding -from space represents a very powerful tool for determining the atmospheric processes involved in ozone depletion, the greenhouse effect, acid rain, etc..
Mann, Christopher Mark
core
Spectral characterisation of variable reactance devices [PDF]
, 1987 Low Noise Figure communication receivers require more efficient frequency converters. Frequency conversion and multiplication processes cannot take place without the existence of harmonics in the system and the inherent property of a nonlinear element is
Fifa, Ekaterini
core
Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses
Advanced Electronic Materials, EarlyView.A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj +3 more
wiley +1 more source
Aging and Electrical Stability of DNTT Honey‐Gated OFETs
Advanced Electronic Materials, EarlyView.DNTT honey‐gated organic transistors were fabricated and evaluated to assess short‐ and long‐term stability under electrical stress and aging. Short‐term transfer measurements (five days, 40 sweeps/day) showed minimal parameter shift, while extended measurements revealed gradual degradation over weeks.
Douglas H. Vieira +8 more
wiley +1 more source
The electrical characteristics and conduction mechanisms of Zn doped silicon-based Schottky barrier diode. [PDF]
Heliyon, 2023 Oeba DA, Bodunrin JO, Moloi SJ.
europepmc +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
HIGH-EFFICIENCY INFRARED RECEIVER
Приборы и методы измерений, 2016 Recent research and development show promising use of high-performance solid-state receivers of the electromagnetic radiation. These receivers are based on the low-barrier Schottky diodes. The approach to the design of the receivers on the basis of delta-
A. K. Esman +4 more
doaj +1 more source
2D Materials Empowered Radar Absorbing Materials: A Review
Advanced Electronic Materials, EarlyView.Recent progress in 2D materials empowered radar absorbing materials (RAMs) is reviewed, highlighting four key structural design strategies that enhance electromagnetic wave absorption. Porous structures, heterogeneous interfaces, printed metamaterials, and tunable metasurfaces are compared in terms of their governing physics, fabrication complexity ...
Yujie Zhong +4 more
wiley +1 more source
120 GHz Frequency-Doubler Module Based on GaN Schottky Barrier Diode. [PDF]
Micromachines (Basel), 2022 Liu H +10 more
europepmc +1 more source