Results 91 to 100 of about 778,720 (285)

Analysis of Punch-Through Breakdown Voltages in 3C-Sic Schottky Barrier Diode Using Gaussian Profile for 200µm Thick Wafer [PDF]

, 2020
: The punch through breakdown voltage of 3C-SiC Schottky Barrier Diode has been analysed in this paper using Gaussian profile. It is observed that 3C-SiC Schottky barrier diode yield high punch through breakdown voltage with higher values of peak doping ...
A K Chatterjee, Pratibha Nishad
core   +1 more source

Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer

Advanced Electronic Materials, Volume 11, Issue 6, May 2025.
A versatile strategy is reported for fabricating multi‐dimensional heterojunctions with significantly improved charge transfer capability. By integrating Ag nanowires with a MoS2/ZnO heterojunction, a fourfold increase in surface photovoltage is achieved, reaching 200 mV under visible light illumination.
Anh Thi Nguyen, Jungyoon Cho, Malkeshkumar Patel, Duc Anh Vu, Jungeun Song, Dongseok Suh, Ambrose Seo, Joondong Kim, Dong‐Wook Kim   +8 more
wiley   +1 more source

Reciprocity in silicon Schottky-barrier diodes

Electronics Letters, 1967
Reciprocity has been examined at X band for low-noise silicon Schottky-barrier diodes by measuring the forward (r.f. to i.f.) and reverse (i.f. to r.f.) conversion losses by the heterodyne method. Reciprocity held for the silicon Schottky-barrier diodes, proving that their low conversion-loss behaviour is due to the nonlinear barrier resistance and not
Y. Anand, W.E. Doherty
openaire   +1 more source

Development of photocatalysis‐membrane separation reactor systems for aqueous pollutant removal

PhotoMat, EarlyView., 2023
Abstract Background In our rapidly expanding society, the demand for clean water has steadily emerged as one of the most critical issues, promoting the development of numerous water treatment strategies. Aims Coupling photocatalysis and membrane separation technology provides an energy saving and environment‐friendly as well as sustainable method for ...
Junyang Zhang, Yingchun Miao, Yuning Huo, Hexing Li   +3 more
wiley   +1 more source

Design and simulation of a novel 1200 V 4H-SiC trench junction barrier Schottky diode

Based on the low cost fabricated 650 V and 1200 V 4H-SiC Schottky barrier diode (SBD), technology computer-aided design (TCAD) of SBD model was calibrated to fit the measurement data.
Lai, L, Liu, Z, Luo, L, Han, J, Xu, X, Linewih, H, Yang, X, Chen, X   +7 more
core   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

Advanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj, Richard Schroedter, Thomas Mikolajick, André Heinzig   +3 more
wiley   +1 more source

High breakdown voltage of 1.3 kV and low turn-on voltage of 0.48 V β-Ga2O3 heterojunction barrier Schottky diode with tungsten Schottky contact

Applied Physics Express
β-Ga _2 O _3 power diodes were expected to possess low turn-on voltage ( V _on ), low reverse leakage ( J _R ), and high blocking capability for low power losses. In this work, a low V _on (0.48 V) β-Ga _2 O _3 heterojunction barrier Schottky diode (HJBS)
Qiuyan Li, Weibing Hao, Jinyang Liu, Zhao Han, Song He, Xuanze Zhou, Guangwei Xu, Shibing Long   +7 more
doaj   +1 more source

HIGH-EFFICIENCY INFRARED RECEIVER

Приборы и методы измерений, 2016
Recent research and development show promising use of high-performance solid-state receivers of the electromagnetic radiation. These receivers are based on the low-barrier Schottky diodes. The approach to the design of the receivers on the basis of delta-
A. K. Esman, V. I. Kostenko, N. I. Mukhurov, G. L. Zykov, V. A. Potachits   +4 more
doaj   +1 more source

120 GHz Frequency-Doubler Module Based on GaN Schottky Barrier Diode. [PDF]

Micromachines (Basel), 2022
Liu H, Liang Z, Meng J, Liu Y, Wang H, Yan C, Wu Z, Liu Y, Zhang D, Wang X, Zhang B.   +10 more
europepmc   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source