Results 71 to 80 of about 778,720 (285)

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

Advanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source

The Role of Self-Assembly Monolayers (SAM) on Schottky Diode Performance

Düzce Üniversitesi Bilim ve Teknoloji Dergisi
This study investigates the electrical and charge transport properties of Schottky diodes with a p-Si/TiO2/SAM/Al structure, incorporating the self-assembly monolayers (SAMs) 4", 4""-[biphenyl-4,4" diylbis(phenylimino)]dibiphenyl-4-carboxylic acid ...
Adem Mutlu, Cem Tozlu, Mustafa Can
doaj   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

Switching characteristics of a diamond Schottky barrier diode

IEICE Electronics Express, 2010
The static current-voltage (I-V) characteristics of a diamond Schottky barrier diode (SBD) have been previously studied. This paper experimentally studies the switching characteristics of a diamond SBD in comparison with the characteristics of a silicon carbide (SiC) SBD.
Kazuya Kodama, Tsuyoshi Funaki, Hitoshi Umezawa, Shinichi Shikata   +3 more
openaire   +2 more sources

Modeling the schottky barrier properties of graphene nanoribbon schottky diode [PDF]

, 2014
The increasing demand for small sized, low power consumption and high processing speeds have always been the pillars of transistor development. To meet the demands of the transistor, the current trend is to reduce the size of Metal Oxide Semiconductor ...
Wong, King Kiat
core  

The Electrical Properties of Nanoscale Parallel Semiconductor Interfaces [PDF]

, 2002
Nanosphere lithography has been used to prepare a series of ordered, periodic arrays of low barrier height n-Si/Ni nanometer-scale contacts interspersed amongst high barrier height n-Si/liquid contacts.
Rossi, Robert Charles
core   +1 more source

Photonic‐Enabled Energy‐Efficient Transparent Neuromorphic Computing Devices: A Review

Advanced Science, EarlyView.
Transparent photonic neuromorphic computing devices merge optics and brain‐inspired computing to overcome von Neumann bottlenecks with ultrafast, low‐energy processing. By exploiting transparent oxides, 2D materials, phase‐change materials, and hybrid heterostructures, these platforms enable photonic synapses, memory, and logic for see‐through edge ...
Shuvaraj Ghosh, Ki‐bum Lee, Junghyeon Lee, Seunghee Cho, Malkeshkumar Patel, Hangfei Li, Yu Wen, Ye Zhou, Joondong Kim   +8 more
wiley   +1 more source

Impact of Annealing on CuInSe2 Thin Films and Its Schottky Interface [PDF]

Журнал нано- та електронної фізики, 2011
The room temperature current–voltage (I-V) characteristics of the Al/p-CuInSe2 Schottky Diodes fabricated on thermally evaporated CIS thin films, before and after annealing, were studied. Prior to their diode formation, the undertaken CIS thin films were
U. Parihar, J.R. Ray, N. Kumar, R. Sachdeva, N. Padha, C.J. Panchal   +5 more
doaj  

Electrically Tunable Piezotronic Transistor by Coupling Interface Polar Symmetry and Strain Gradient

Advanced Science, EarlyView.
A macroscale tip‐induced strain gradient generates bulk piezo‐charges in GaN, enabling bias‐controlled shielding and selective Schottky barrier modulation. This strain‐gradient piezotronic transistor exhibits electrically switchable high‐ and low‐sensitivity states, providing ultrahigh strain sensitivity and wide tunability for adaptive mechanical ...
Gongwei Hu, Xiaoming Dong, Yihan Zhang, Yong Chao, Menglu Li, Min Liu, Liqing Pan, Lijie Li, Wei Huang, Fobao Huang   +9 more
wiley   +1 more source

Anisotropic Memristive Switching in NbOCl2 Enabled by Directional Oxygen Ion Migration

Advanced Science, EarlyView.
This study investigates strongly orientation‐dependent memristive switching in anisotropic NbOCl2, observed exclusively along the in‐plane c‐axis. The switching originates from direction‐selective oxygen‐ion migration and vacancy propagation that modulate the Pd/NbOCl2 Schottky barrier, enabling short‐term plasticity.
Caokun Wang, Yun Ji, Sanchali Mitra, Yufei Shi, Haofei Zheng, Yee Sin Ang, Kah‐Wee Ang   +6 more
wiley   +1 more source