Results 71 to 80 of about 2,560 (228)
Photoresponse Properties of Ambipolar Transport in WSe2 Field‐Effect Transistors
Advanced Electronic Materials, EarlyView.This study explores the photoresponse of WSe2 ambipolar field‐effect transistors, which exhibit unipolar, saturation, and ambipolar transport regions. Light illumination induces a shift of critical voltage with enhanced photocurrent generation driven by the photogating effect without the material degradation seen in avalanche photodetectors. This study
Jongeun Yoo +11 more
wiley +1 more source
HIGH-EFFICIENCY INFRARED RECEIVER
Приборы и методы измерений, 2016 Recent research and development show promising use of high-performance solid-state receivers of the electromagnetic radiation. These receivers are based on the low-barrier Schottky diodes. The approach to the design of the receivers on the basis of delta-
A. K. Esman +4 more
doaj +1 more source
Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses
Advanced Electronic Materials, EarlyView.A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj +3 more
wiley +1 more source
Applied Physics Expressβ-Ga _2 O _3 power diodes were expected to possess low turn-on voltage ( V _on ), low reverse leakage ( J _R ), and high blocking capability for low power losses. In this work, a low V _on (0.48 V) β-Ga _2 O _3 heterojunction barrier Schottky diode (HJBS)
Qiuyan Li +7 more
doaj +1 more source
A method to calculate the voltage-current characteristics of [PDF]
Maejo International Journal of Science and Technology, 2009 The voltage-current characteristics of the Schottky barrier diode defined by the diode equation can be obtained by using iteration method and a C++ program.
Rajneesh Talwar
doaj
120 GHz Frequency-Doubler Module Based on GaN Schottky Barrier Diode. [PDF]
Micromachines (Basel), 2022 Liu H +10 more
europepmc +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Reciprocity in silicon Schottky-barrier diodes
Electronics Letters, 1967 Reciprocity has been examined at X band for low-noise silicon Schottky-barrier diodes by measuring the forward (r.f. to i.f.) and reverse (i.f. to r.f.) conversion losses by the heterodyne method. Reciprocity held for the silicon Schottky-barrier diodes, proving that their low conversion-loss behaviour is due to the nonlinear barrier resistance and not
Y. Anand, W.E. Doherty
openaire +1 more source
A 5-aminoisophthalic acid low molecular weight gelator based novel semiconducting supramolecular Zn(ii)-metallogel: unlocking an efficient Schottky barrier diode for microelectronics. [PDF]
Nanoscale Adv, 2023 Dhibar S +9 more
europepmc +1 more source
Advanced Electronic Materials, EarlyView.Resistive memory devices are explored for operation at extremely low temperatures relevant to quantum computing. The study reveals how transistor behavior strongly influences memory performance under cryogenic conditions and introduces an optimized programming strategy.
Emilio Pérez‐Bosch Quesada +11 more
wiley +1 more source