Results 71 to 80 of about 5,171 (275)

Effect of Heating of Charge Carriers and Phonons on The Contact Resistance of Rectifying Metal-Semiconductor Structures

East European Journal of Physics
The dependence of the temperature of charge carriers and phonons on the contact resistance of the Schottky diode is calculated. It is shown that the increase in contact resistance depends on the current passing through the diode, the surface and volume ...
Gafur Gulyamov, K.B. Umarov, Alisher Z. Soliyev   +2 more
doaj   +1 more source

Influence of Cr doping on Schottky barrier height and visible light detection of ZnO thin films deposited by magnetron sputtering

Micro and Nano Engineering, 2019
A comparative study of the electrical and photodetection properties of ZnO and Cr doped ZnO thin films are being reported here. The films were deposited using magnetron sputtering. X-ray diffraction (XRD) revealed hexagonal crystal structure of the films
S. Fareed, Arifa Jamil, N. Tiwari, M.A. Rafiq   +3 more
doaj   +1 more source

Diamond Schottky barrier diodes

, 2010
Research on wide band gap semiconductors suitable for power electronic devices has spread rapidly in the last decade. The remarkable results exhibited by silicon carbide (SiC) Schottky batTier diodes (SBDs), commercially available since 2001, showed the potential of wide band gap semiconductors for replacing silicon (Si) in the range of medium to high ...
openaire   +1 more source

A Universal Approach to Enhancing Silicon Hot‐Carrier Photodetectors for CMOS‐Compatible SWIR Imaging

Advanced Science, EarlyView.
Silicon hot‐carrier photodetectors offer a CMOS‐compatible pathway for SWIR detection but suffer from intrinsically low quantum efficiency. Here, we introduce a quasi‐generalized antireflection coating (QARC) that universally enhances optical absorption and quantum efficiency, enabling the first CMOS‐compatible SWIR imaging with silicon hot‐carrier ...
Eui‐Hyoun Ryu, Hyun Woo Ko, Sunghyun Hwang, Nayeon Kim, Ji‐Hwan Son, Sunghyun Han, Paul Hongsuck Seo, Jisoo Hong, Sang‐Jun Kim, Seon Kyu Yoon, Min‐Chul Park, In‐Ho Lee   +11 more
wiley   +1 more source

The Role of Self-Assembly Monolayers (SAM) on Schottky Diode Performance

Düzce Üniversitesi Bilim ve Teknoloji Dergisi
This study investigates the electrical and charge transport properties of Schottky diodes with a p-Si/TiO2/SAM/Al structure, incorporating the self-assembly monolayers (SAMs) 4", 4""-[biphenyl-4,4" diylbis(phenylimino)]dibiphenyl-4-carboxylic acid ...
Adem Mutlu, Mustafa Can, Cem Tozlu
doaj   +1 more source

Electrodeposited Ni/Ge and germanide schottky barriers for nanoelectronics applications

, 2009
In recent years metal/semiconductor Schottky barriers have found numerous applications in nanoelectronics. The work presented in this thesis focuses on the improvement of a few of the relevant devices using electrodeposition of metal on Ge for Schottky ...
Husain, Muhammad Khaled
core  

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

Advanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

Design and simulation of a novel 1200 V 4H-SiC trench junction barrier Schottky diode

Based on the low cost fabricated 650 V and 1200 V 4H-SiC Schottky barrier diode (SBD), technology computer-aided design (TCAD) of SBD model was calibrated to fit the measurement data.
Lai, L, Liu, Z, Luo, L, Han, J, Xu, X, Linewih, H, Yang, X, Chen, X   +7 more
core   +1 more source

Photonic‐Enabled Energy‐Efficient Transparent Neuromorphic Computing Devices: A Review

Advanced Science, EarlyView.
Transparent photonic neuromorphic computing devices merge optics and brain‐inspired computing to overcome von Neumann bottlenecks with ultrafast, low‐energy processing. By exploiting transparent oxides, 2D materials, phase‐change materials, and hybrid heterostructures, these platforms enable photonic synapses, memory, and logic for see‐through edge ...
Shuvaraj Ghosh, Ki‐bum Lee, Junghyeon Lee, Seunghee Cho, Malkeshkumar Patel, Hangfei Li, Yu Wen, Ye Zhou, Joondong Kim   +8 more
wiley   +1 more source