Results 11 to 20 of about 10,590 (276)

Metal-semiconductor Schottky diode with Landauer’s formalism [PDF]

Nano Express
The Schottky barrier diode is a unipolar electronic device formed by the heterojunction of a metal and a semiconductor, widely used in various electronic and optoelectronic applications.
Antonio Di Bartolomeo, Kimberly Intonti, Luciano Peluso, Rosangela Di Marco, Gerardo Vocca, Francesco Romeo, Filippo Giubileo, Alessandro Grillo, Elif Orhan   +8 more
doaj   +2 more sources

Observation of negative differential conductance in a reverse-biased Ni/Ge Schottky diode [PDF]

, 2009
We report the experimental observation of negative differential conductance in a Ni/Ge Schottky diode. With the aid of theoretical models and numerical simulation we show that, at reverse bias, electons tunnel into the high electric field of the ...
Husain, Muhammad, Li, Xiaoli V., de Groot, Cornelis H.   +2 more
core   +1 more source

A generalized drift-diffusion model for rectifying Schottky contact simulation [PDF]

, 2010
We present a discussion on the modeling of Schottky barrier rectifying contacts (diodes) within the framework of partial-differential-equation-based physical simulations.
Bonani, Fabrizio, Pèrez, S., Traversa F. L., Traversa, F.L., Mateos, J., Gonzàlez, T., Pèrez S., Ghione, Giovanni, Donati Guerrieri, Simona, Bertazzi, Francesco, Gonzàlez T., Mateos J.   +11 more
core   +1 more source

Schottky barrier light emitting diode in standard CMOS technology [PDF]

, 2011
Schottky barrier light emitting diode is designed and fabricated in CMOS technology. Stable Electro-luminescent emission is observed. The emission exhibits widespread spectral characteristics with nearly flatten peak in visible light range from673nm ...
Beiju Huang, Zan Dong, Wang, Wei, Guo, Weilian, Zanyun Zhang, Chen, Hongda, Weilian Guo, Hongda Chen, Dong, Zan, Wei Wang, Huang, B.(bjhuang@semi.ac.cn), Huang, Beiju, Zhang, Zanyun   +12 more
core   +1 more source

High Electron Mobility Ge_1−xSn_x(x > 10%) Folding Space Charge Zone Schottky Diode for Microwave Wireless Power Transfer

IEEE Access, 2019
The microwave wireless power transfer is a power transmission device that breaks through the limitation of the transmission line, and is helpful for handling equipment power supply problems in complex scenes.
Xiao Zhai, Jianjun Song, Hangyu Chen, Xianying Dai, Tianlong Zhao   +4 more
doaj   +1 more source

A method for improving the betavoltaic cell’s conversion efficiency: Using the alloy as Schottky metal

AIP Advances, 2022
Under the irradiation of a 63Ni source, the Al/diamond Schottky barrier diode and 2198 Al–Li alloy/diamond Schottky barrier diode can convert decay energy into electrical energy.
Yu Wang, Jingbin Lu, Renzhou Zheng, Xiaoyi Li, Yumin Liu, Xue Zhang, Yuehui Zhang, Ziyi Chen   +7 more
doaj   +1 more source

Current – voltage measurements of Al/a-Se/Au Schottky diode solar cells

Kuwait Journal of Science, 2022
Schottky diode Al/a-Se/Au as solar cells (SC) were made up by thermal evaporation technique (TET) on glass  thin slide at a substrate under vacuum (vacuum value equal to  mbar).
Mayyada Fdhala, Ayser Hemed, Ramiz Al-Ansari, Raad Al-Haddad, Rasha Abbas   +4 more
doaj   +1 more source

Pt/Nanograined ZnO/SiC Schottky diode based hydrogen and propene sensor [PDF]

, 2011
A nanostructured Schottky diode was fabricated to sense hydrogen and propene gases in the concentration range of 0.06% to 1%. The ZnO sensitive layer was deposited on SiC substrate by pulse laser deposition technique.
Kang, J.H., Kalantar-zadeh, K., Oh, C.M., Wlodarski, W., W. Wlodarski, K. Kalantar-zadeh, Shafiei, M., Yu, J., J. Yu, M. Shafiei, C. M. Oh, T. B. Jung, Jung, T.B., J. H. Kang   +13 more
core   +1 more source

Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm [PDF]

, 2013
The design, modeling, fabrication, and characterization of single-photon avalanche diode detectors with an epitaxial Ge absorption region grown directly on Si are presented.
Lever, LJM, Paul, D.J., Buller, GS, Ikonic, Zoran, Warburton, Ryan E, Ikonic, Z, Myronov, Maksym, Knights, AP, Leadley, D. R. (David R.), Gallacher, Kevin, Kelsall, Robert W., Pilgrim, Neil J, Pilgrim, NJ, Paul, DJ, Myronov, M., Paul, Douglas J. (Professor of Semiconductor Devices), Allred, P, Intermite, G., Leadley, David R, Huante-Ceron, E, Kelsall, RW, Lever, Leon J M, Pilgrim, Neil J., Kelsall, R.W., Allred, P., Myronov, M, Huante-Ceron, Edgar, Lever, Leon J. M., Lever, L.J.M., Leadley, D.R., Knights, A.P., Knights, Andrew P., Allred, Phil, Ikonic, Z., Huante-Ceron, E., Warburton, RE, Knights, Andrew P, Pilgrim, N.J., Buller, G.S., Intermite, G, Paul, Douglas J, Warburton, Ryan E., Leadley, DR, Intermite, Giuseppe, Gallacher, K, Warburton, R.E., Buller, G. S. (Gerald S.), Kelsall, Robert W, Buller, Gerald Stuart   +48 more
core   +1 more source

The dependence of Schottky junction (I–V) characteristics on the metal probe size in nano metal–semiconductor contacts

AIP Advances, 2018
We have studied the dependence of Schottky junction (I–V) characteristics on the metal contact size in metal–semiconductor (M–S) junctions using different metal nanoprobe sizes. The results show strong dependence of (I–V) characteristics on the nanoprobe
Moh’d Rezeq, Ahmed Ali, Shashikant P. Patole, Khouloud Eledlebi, Ripon Kumar Dey, Bo Cui   +5 more
doaj   +1 more source