Results 11 to 20 of about 174,851 (286)
Metal-semiconductor Schottky diode with Landauer’s formalism
Nano ExpressThe Schottky barrier diode is a unipolar electronic device formed by the heterojunction of a metal and a semiconductor, widely used in various electronic and optoelectronic applications.
Antonio Di Bartolomeo +8 more
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A Novel 183GHz Subharmonic Schottky Diode Mixer [PDF]
, 1992 PhDThe technique of microwave . limb sounding -from space represents a very powerful tool for determining the atmospheric processes involved in ozone depletion, the greenhouse effect, acid rain, etc..
Mann, Christopher Mark
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A generalized drift-diffusion model for rectifying Schottky contact simulation [PDF]
, 2010 We present a discussion on the modeling of Schottky barrier rectifying contacts (diodes) within the framework of partial-differential-equation-based physical simulations.
Bonani, Fabrizio +11 more
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High quality Schottky contacts for limiting leakage currents in Ge-based Schottky barrier MOSFETs [PDF]
, 2009 Schottky barrier (SB) Ge channel MOSFETs suffer from high drain-body leakage at the required elevated substrate doping concentrations to suppress source-drain leakage.
Husain, M.K., Li, X., de Groot, C.H.
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IEEE Access, 2019 The microwave wireless power transfer is a power transmission device that breaks through the limitation of the transmission line, and is helpful for handling equipment power supply problems in complex scenes.
Xiao Zhai +4 more
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AIP Advances, 2022 Under the irradiation of a 63Ni source, the Al/diamond Schottky barrier diode and 2198 Al–Li alloy/diamond Schottky barrier diode can convert decay energy into electrical energy.
Yu Wang +7 more
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Current – voltage measurements of Al/a-Se/Au Schottky diode solar cells
Kuwait Journal of Science, 2022 Schottky diode Al/a-Se/Au as solar cells (SC) were made up by thermal evaporation technique (TET) on glass thin slide at a substrate under vacuum (vacuum value equal to mbar).
Mayyada Fdhala +4 more
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AIP Advances, 2018 We have studied the dependence of Schottky junction (I–V) characteristics on the metal contact size in metal–semiconductor (M–S) junctions using different metal nanoprobe sizes. The results show strong dependence of (I–V) characteristics on the nanoprobe
Moh’d Rezeq +5 more
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Effect of Series Resistance and Interface State Density on Electrical Characteristics of Au/SiO2/n-GaN Schottky Diodes [PDF]
Журнал нано- та електронної фізики, 2011 We have investigated the current-voltage (I−V) characteristics of (Au/SiO2/n-GaN) metal-insulator-semiconductor (MIS) Schottky diodes and compared with (Au/n-GaN) metal-semiconductor (MS) Schottky diode. The effect of SiO2 on the surface preparation of n-
M. Siva Pratap Reddy +3 more
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Quantitative analysis of the Schottky interface of reduced graphene oxide Schottky diodes
Materials Research Express, 2020 A Schottky contact is greatly vital for electronic devices; therefore, a quantitative analysis of the Schottky interface is important in realizing a high-performance Schottky diode.
Souad Aodah +3 more
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