Results 31 to 40 of about 10,590 (276)

Graphene-Silicon Schottky Diodes [PDF]

Nano Letters, 2011
We have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. The resulting current-voltage characteristics exhibit rectifying diode behavior with a barrier energy of 0.41 eV on n-type silicon and 0.45 eV on p-type silicon at the room temperature. The I-V characteristics measured at 100,
Chun-Chung, Chen, Mehmet, Aykol, Chia-Chi, Chang, A F J, Levi, Stephen B, Cronin   +4 more
openaire   +2 more sources

Fabrication of Ga2O3 Schottky Barrier Diode and Heterojunction Diode by MOCVD [PDF]

, 2022
In this article, we reported on a Ga2O3-based Schottky barrier diode and heterojunction diode from MOCVD. The Si-doped n-type Ga2O3 drift layer, grown by MOCVD, exhibited high crystal quality, flat surfaces, and uniform doping.
Zhang, Yuantao, Dang, Xinming, Zhang, Baolin, Teng Jiao, Zhengda Li, Li, Zhengda, Xin Dong, Chen, Peiran, Diao, Zhaoti, Chen, Wei, Zhaoti Diao, Wei Chen, Yuantao Zhang, Baolin Zhang, Dong, Xin, Jiao, Teng, Xinming Dang, Peiran Chen   +17 more
core   +1 more source

Air-bridged Schottky diodes for dynamically tunable millimeter-wave metamaterial phase shifters

Scientific Reports, 2021
A low loss metamaterial unit cell is presented with an integrated GaAs air-bridged Schottky diode to produce a dynamically tunable reflective phase shifter that is capable of up to 250° phase shift with an experimentally measured average loss of 6.2 dB ...
Evangelos Vassos, James Churm, Jeff Powell, Colin Viegas, Byron Alderman, Alexandros Feresidis   +5 more
doaj   +1 more source

Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation

Walailak Journal of Science and Technology, 2018
Herein, boron implantation technique was employed to engineer the Schottky barrier height (SBH) of Ti/n-type silicon junction (Ti/n-Si). The Ti/n-Si Schottky diodes with boron doses of 4, 5.4 and 6.6´1012 cm-2 at the energy of 25 keV were fabricated with
Doldet TANTRAVIWAT, Wittawat YAMWONG, Udom TECHAKIJKAJORN, Kazuo IMAI, Burapat INCEESUNGVORN   +4 more
doaj   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

Advanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong, You Zhou, Qingxiu Li, Wenyu Zhao, Sunyingyue Geng, Hangfei Li, Yan‐Bing Leng, Shirui Zhu, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Ye Zhou, Su‐Ting Han   +12 more
wiley   +1 more source

State-Space Modelling of Schottky Diode Rectifiers Including Parasitic and Coupling Effects up to the Terahertz Band [PDF]

A nonlinear state-space model for Schottky diode rectifiers is presented that incorporates junction dynamics, layout parasitic effects, and electromagnetic coupling effects.
Basherlou, Haleh Jahanbakhsh, Odiamenhi, Martins Aizanabor, See, Chan Hwang, Goh, Keng, Parchin, Naser Ojaroudi, Yu, Hongnian   +5 more
core   +2 more sources

Enhanced Non-Uniformity Modeling of 4H-SiC Schottky Diode Characteristics Over Wide High Temperature and Forward Bias Ranges

IEEE Journal of the Electron Devices Society, 2020
A practical model, adequate for full reproduction of inhomogeneous Schottky diodes' forward characteristics over wide high-temperature and bias ranges, is proposed.
Gheorghe Brezeanu, Gheorghe Pristavu, Florin Draghici, Razvan Pascu, Francesco Della Corte, Simone Rascuna   +5 more
doaj   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

Advanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades, Pedro Hidalgo, David Maestre, Ruth Martínez‐Casado, Emilio Nogales, Beatriz Rodríguez, G. Cristian Vásquez, Bianchi Méndez   +7 more
wiley   +1 more source

Electrodeposited Ni/Ge and germanide schottky barriers for nanoelectronics applications [PDF]

, 2009
In recent years metal/semiconductor Schottky barriers have found numerous applications in nanoelectronics. The work presented in this thesis focuses on the improvement of a few of the relevant devices using electrodeposition of metal on Ge for Schottky ...
Husain, Muhammad Khaled
core  

Current‐voltage model of a graphene nanoribbon p‐n junction and Schottky junction diode

IET Circuits, Devices and Systems, 2022
This work presents a simplified analytical model of a p‐n junction diode based on a graphene nanoribbon (GNR) and a unique type of Schottky diode based on metallic graphene and semi‐conducting GNRs.
Samira Shamsir, Laila Parvin Poly, Rajat Chakraborty, Samia Subrina   +3 more
doaj   +1 more source