Results 31 to 40 of about 470,842 (283)
Nanophotonics, 2019 Due to the advantages of narrow energy distribution of plasmonic hot-electrons in Ag and the high density of states in the TiO2 conduction band, an Ag/TiO2 composite is considered to be an ideal combination to construct a plasmonic hot-electron ...
X. Gao +6 more
semanticscholar +1 more source
AIP Advances, 2018 We have studied the dependence of Schottky junction (I–V) characteristics on the metal contact size in metal–semiconductor (M–S) junctions using different metal nanoprobe sizes. The results show strong dependence of (I–V) characteristics on the nanoprobe
Moh’d Rezeq +5 more
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Effect of Series Resistance and Interface State Density on Electrical Characteristics of Au/SiO2/n-GaN Schottky Diodes [PDF]
Журнал нано- та електронної фізики, 2011 We have investigated the current-voltage (I−V) characteristics of (Au/SiO2/n-GaN) metal-insulator-semiconductor (MIS) Schottky diodes and compared with (Au/n-GaN) metal-semiconductor (MS) Schottky diode. The effect of SiO2 on the surface preparation of n-
M. Siva Pratap Reddy +3 more
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Quantitative analysis of the Schottky interface of reduced graphene oxide Schottky diodes
Materials Research Express, 2020 A Schottky contact is greatly vital for electronic devices; therefore, a quantitative analysis of the Schottky interface is important in realizing a high-performance Schottky diode.
Souad Aodah +3 more
doaj +1 more source
A 300 GHz balanced doubler based on planar Schottky diodes
Dianzi Jishu Yingyong, 2019 The structure and dimension of Schottky diode were designed. The loss at high frequency was reduced using a quasi-whisker contacted anode structure by a metal finger akin to an air bridge.
Zhang Lisen +6 more
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Schottky Barrier Height Analysis of Diamond SPIND Using High Temperature Operation up to 873 K
IEEE Journal of the Electron Devices Society, 2020 In this work, the high temperature performance of a diamond Schottky PIN diode is reported in the range of 298-873 K. The diamond diode exhibited an explicit rectification up to 723 K with an excellent forward current density of >3000 A/cm2.
M. Malakoutian +4 more
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Avalanche robustness of SiC Schottky diode [PDF]
Microelectronics Reliability, 2016 Reliability is one of the key issues for the application of Silicon carbide (SiC) diode in high power conversion systems. For instance, in high voltage direct current (HVDC) converters, the devices can be submitted to high voltage transients which yield to avalanche.
Dchar, Ilyas +2 more
openaire +2 more sources
Towards substrate engineering of graphene-silicon Schottky diode photodetectors. [PDF]
Nanoscale, 2017 Graphene-silicon Schottky diode photodetectors possess beneficial properties such as high responsivities and detectivities, broad spectral wavelength operation and high operating speeds.
H. Selvi +7 more
semanticscholar +1 more source
Nanoscale Research Letters, 2019 We studied the reverse current emission mechanism of the Mo/β-Ga2O3 Schottky barrier diode through the temperature-dependent current-voltage (I-V) characteristics from 298 to 423 K.
Zhuangzhuang Hu +10 more
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Metal oxide semiconductor-based Schottky diodes: a review of recent advances
Materials Research Express, 2020 Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky ...
Noorah A Al-Ahmadi
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