Results 31 to 40 of about 174,851 (286)

Air-bridged Schottky diodes for dynamically tunable millimeter-wave metamaterial phase shifters

Scientific Reports, 2021
A low loss metamaterial unit cell is presented with an integrated GaAs air-bridged Schottky diode to produce a dynamically tunable reflective phase shifter that is capable of up to 250° phase shift with an experimentally measured average loss of 6.2 dB ...
Evangelos Vassos, James Churm, Jeff Powell, Colin Viegas, Byron Alderman, Alexandros Feresidis   +5 more
doaj   +1 more source

Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm [PDF]

, 2013
The design, modeling, fabrication, and characterization of single-photon avalanche diode detectors with an epitaxial Ge absorption region grown directly on Si are presented.
Lever, LJM, Paul, D.J., Buller, GS, Ikonic, Zoran, Warburton, Ryan E, Ikonic, Z, Myronov, Maksym, Knights, AP, Leadley, D. R. (David R.), Gallacher, Kevin, Kelsall, Robert W., Pilgrim, Neil J, Pilgrim, NJ, Paul, DJ, Myronov, M., Paul, Douglas J. (Professor of Semiconductor Devices), Allred, P, Intermite, G., Leadley, David R, Huante-Ceron, E, Kelsall, RW, Lever, Leon J M, Pilgrim, Neil J., Kelsall, R.W., Allred, P., Myronov, M, Huante-Ceron, Edgar, Lever, Leon J. M., Lever, L.J.M., Leadley, D.R., Knights, A.P., Knights, Andrew P., Allred, Phil, Ikonic, Z., Huante-Ceron, E., Warburton, RE, Knights, Andrew P, Pilgrim, N.J., Buller, G.S., Intermite, G, Paul, Douglas J, Warburton, Ryan E., Leadley, DR, Intermite, Giuseppe, Gallacher, K, Warburton, R.E., Buller, G. S. (Gerald S.), Kelsall, Robert W, Buller, Gerald Stuart   +48 more
core   +1 more source

Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation

Walailak Journal of Science and Technology, 2018
Herein, boron implantation technique was employed to engineer the Schottky barrier height (SBH) of Ti/n-type silicon junction (Ti/n-Si). The Ti/n-Si Schottky diodes with boron doses of 4, 5.4 and 6.6´1012 cm-2 at the energy of 25 keV were fabricated with
Doldet TANTRAVIWAT, Wittawat YAMWONG, Udom TECHAKIJKAJORN, Kazuo IMAI, Burapat INCEESUNGVORN   +4 more
doaj   +1 more source

Covalent Functionalization of 2D Semiconductors: A Roadmap to Advanced Electronic Devices

Advanced Functional Materials, EarlyView.
This Review presents recent advances in the covalent functionalization strategies for two‐dimensional semiconductors and their implementation in modern technologies. Layered materials are modified through diverse molecular chemistries (e.g., thiols, diazonium salts, alkyl halides, and electron‐deficient species) to tailor their surface properties ...
Ramiro Quirós‐Ovies, Bin Han, Paolo Samorì   +2 more
wiley   +1 more source

Enhanced Non-Uniformity Modeling of 4H-SiC Schottky Diode Characteristics Over Wide High Temperature and Forward Bias Ranges

IEEE Journal of the Electron Devices Society, 2020
A practical model, adequate for full reproduction of inhomogeneous Schottky diodes' forward characteristics over wide high-temperature and bias ranges, is proposed.
Gheorghe Brezeanu, Gheorghe Pristavu, Florin Draghici, Razvan Pascu, Francesco Della Corte, Simone Rascuna   +5 more
doaj   +1 more source

Hybrid Ferroelectric Tunnel Junctions with Intrinsic Nonlinearity and Self‐Rectification via Interfacial Reconstruction

Advanced Functional Materials, EarlyView.
Rapid thermal annealing reconstructs the BCFO/Nb:STO interface into an atomically thin reconstructed interfacial layer, which reshapes the tunneling barrier and converts a high‐TER ferroelectric tunnel junction into an intrinsically nonlinear, self‐rectifying device.
Hojin Lee, Joonbong Lee, Jinho Byun, Sang‐Hyeok Yang, A young Cho, Sangwoo Lee, Dae Haa Ryu, Hyunbin Chung, Hee Seo Yun, Moon Seop Choi, Yesul Choi, Sungkyun Park, Min‐Hyung Jung, Dongwon Lee, Yoon‐Uk Heo, Hu Young Jeong, Hongseok Kim, Shinhyeong Lee, Yunseok Kim, Young‐Min Kim, Jaekwang Lee, Taekjib Choi   +21 more
wiley   +1 more source

Current‐voltage model of a graphene nanoribbon p‐n junction and Schottky junction diode

IET Circuits, Devices and Systems, 2022
This work presents a simplified analytical model of a p‐n junction diode based on a graphene nanoribbon (GNR) and a unique type of Schottky diode based on metallic graphene and semi‐conducting GNRs.
Samira Shamsir, Laila Parvin Poly, Rajat Chakraborty, Samia Subrina   +3 more
doaj   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

Advanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong, You Zhou, Qingxiu Li, Wenyu Zhao, Sunyingyue Geng, Hangfei Li, Yan‐Bing Leng, Shirui Zhu, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Ye Zhou, Su‐Ting Han   +12 more
wiley   +1 more source

Graphene–Silicon Schottky Diodes for Photodetection [PDF]

IEEE Transactions on Nanotechnology, 2018
5 pages, 9 ...
Di Bartolomeo, Antonio, Luongo, Giuseppe, Iemmo, Laura, Urban, Francesca, Giubileo, Filippo   +4 more
openaire   +2 more sources

Etude et modélisation électrique d’une diode Schottky [PDF]

, 2021
La jonction d’un matériau semi-conducteur à large gap comme le SiC avec un métal donne naissance à un composant très important dans les applications à haute puissance, la diode Schottky.
Bezzaouia, Siham, Ghilas, Bochra
core