Results 1 to 10 of about 10,847 (275)
The effect of wafer thinning and thermal capacitance on chip temperature of SiC Schottky diodes during surge currents [PDF]
Scientific Reports, 2023 Due to superior material properties of SiC for high-voltage devices, SiC Schottky diodes are used in energy-conversion systems such as solar-cell inverters, battery chargers, and power modules for electric cars and unmanned aerial vehicles.
Jenny Damcevska +3 more
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Scaling of nano-Schottky-diodes
Applied Physics Letters, 2002 A generally applicable model is presented to describe the potential barrier shape in ultrasmall Schottky diodes. It is shown that for diodes smaller than a characteristic length lc (associated with the semiconductor doping level) the conventional ...
G D J Smit, S Rogge, T M Klapwijk
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Graphene-Silicon Schottky Diodes [PDF]
Nano Letters, 2011 We have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. The resulting current-voltage characteristics exhibit rectifying diode behavior with a barrier energy of 0.41 eV on n-type silicon and 0.45 eV on p-type silicon at the room temperature. The I-V characteristics measured at 100,
Chun-Chung Chen +2 more
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A Method and Criterion for Repetitive Surge Current in Silicon Carbide Schottky Diodes
IEEE AccessThe need for efficient power-conversion systems in renewable energy, electric vehicles, and industrial power applications has motivated the development of wide-bandgap power semiconductor devices, such as the SiC Schottky diode.
Jenny Damcevska +3 more
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Proton irradiation Of Ga2O3 Schottky diodes and NiO/Ga2O3 heterojunctions [PDF]
Scientific Reportsp-NiO/n-Ga2O3 heterojunction (HJ) diodes exhibit much larger changes in their properties upon 1.1 MeV proton irradiation than Schottky diodes (SDs) prepared on the same material.
Alexander Y. Polyakov +16 more
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A 135-190 GHz Broadband Self-Biased Frequency Doubler using Four-Anode Schottky Diodes [PDF]
Micromachines, 2019 This paper describes the design and demonstration of a 135−190 GHz self-biased broadband frequency doubler based on planar Schottky diodes. Unlike traditional bias schemes, the diodes are biased in resistive mode by a self-bias resistor; thus, no ...
Chengkai Wu +5 more
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GaN Nanorod Schottky and p−n Junction Diodes
Nano Letters, 2006 Conductive atomic force microscopy has been used to characterize single GaN nanorod Schottky and p-n junction diodes. The ideality factor, reverse breakdown voltage, and the Schottky barrier height of individual nanorod ...
Hogyoung Kim, T Sands
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Schottky diodes, sensors, biomedical technologies
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019 Diodes Schottky characteristics, sensors of liquid media and principal aspects connected with bioresonans effects are described.
V. V. Baranov
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AIP Advances, 2022 The commercialization of GaN-based Schottky barrier diodes in middle- and high- voltage applications still faces many challenges, in which the lack of an effective selective area p-type doping method is one of the main obstacles.
Yuhao Zhou +7 more
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THE USE OF POROUS ANODIC OXIDE OF SILICON IN THE PRODUCTION OF SEMICONDUCTOR DEVICES [PDF]
Biomedicinskaâ Inženeriâ i Èlektronika, 2017 The article describes the technological processes for manufacturing high-voltage diodes, varicaps and Schottky diodes using layers of porous anodic oxide of silicon.
Samoilov N.A. +3 more
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