Results 1 to 10 of about 10,859 (269)
The effect of wafer thinning and thermal capacitance on chip temperature of SiC Schottky diodes during surge currents [PDF]
Scientific Reports, 2023 Due to superior material properties of SiC for high-voltage devices, SiC Schottky diodes are used in energy-conversion systems such as solar-cell inverters, battery chargers, and power modules for electric cars and unmanned aerial vehicles.
Jenny Damcevska +3 more
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Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation [PDF]
Nanomaterials, 2018 We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epitaxy (HVPE) a-plane GaN template grown via in situ GaN nanodot formation. Although the Schottky diodes present excellent rectifying characteristics, their
Moonsang Lee +4 more
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Proton irradiation Of Ga2O3 Schottky diodes and NiO/Ga2O3 heterojunctions [PDF]
Scientific Reportsp-NiO/n-Ga2O3 heterojunction (HJ) diodes exhibit much larger changes in their properties upon 1.1 MeV proton irradiation than Schottky diodes (SDs) prepared on the same material.
Alexander Y. Polyakov +16 more
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Graphene-Silicon Schottky Diodes [PDF]
Nano Letters, 2011 We have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. The resulting current-voltage characteristics exhibit rectifying diode behavior with a barrier energy of 0.41 eV on n-type silicon and 0.45 eV on p-type silicon at the room temperature. The I-V characteristics measured at 100,
Bo Wang +2 more
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A 135-190 GHz Broadband Self-Biased Frequency Doubler using Four-Anode Schottky Diodes [PDF]
Micromachines, 2019 This paper describes the design and demonstration of a 135−190 GHz self-biased broadband frequency doubler based on planar Schottky diodes. Unlike traditional bias schemes, the diodes are biased in resistive mode by a self-bias resistor; thus, no ...
Chengkai Wu +5 more
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AIP Advances, 2022 The commercialization of GaN-based Schottky barrier diodes in middle- and high- voltage applications still faces many challenges, in which the lack of an effective selective area p-type doping method is one of the main obstacles.
Yuhao Zhou +7 more
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THE USE OF POROUS ANODIC OXIDE OF SILICON IN THE PRODUCTION OF SEMICONDUCTOR DEVICES [PDF]
Biomedicinskaâ Inženeriâ i Èlektronika, 2017 The article describes the technological processes for manufacturing high-voltage diodes, varicaps and Schottky diodes using layers of porous anodic oxide of silicon.
Samoilov N.A. +3 more
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Effects of deposition temperature on Mo/SiC Schottky contacts
AIP Advances, 2022 We report on the results of our investigation of the effect of deposition temperature on molybdenum (Mo) used as Schottky contacts to fabricate silicon carbide (SiC) Schottky barrier diodes.
Tom N. Oder, Sai B. Naredla
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Electronics Letters, 2021 Gallium nitride based high‐power electronic devices are now in full swing. However, the phenomenon that the gallium nitride Schottky diodes break down prematurely without reaching the gallium nitride material limit is unsolved.
Jian Li +4 more
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Lateral GaN Schottky superjunction diodes with buried p-GaN by NH3-MBE [PDF]
APL Electronic DevicesIn this work, we demonstrate lateral GaN Schottky superjunction diodes using a p–n–p layer structure. The lateral nature of these devices circumvents the difficulties in achieving charge balance with etch and regrowth techniques. The p–n–p layer Schottky
Z. J. Biegler +4 more
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