Results 21 to 30 of about 137,897 (277)
A Stable and Efficient Pt/n-Type Ge Schottky Contact That Uses Low-Cost Carbon Paste Interlayers
Crystals, 2021 Ge-based Schottky diodes find applications in high-speed devices. However, Fermi-level pinning is a major issue for the development of Ge-based diodes. This study fabricates a Pt/carbon paste (CP)/Ge Schottky diode using low-cost CP as an interlayer. The
Pei-Te Lin +8 more
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IEEE Access, 2020 Amorphous In-Ga-Zn-O (IGZO) is a high-mobility semiconductor employed in modern thin-film transistors for displays and it is considered as a promising material for Schottky diode-based rectifiers.
Veronika Ulianova +11 more
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IEEE Journal of the Electron Devices Society, 2020 A practical model, adequate for full reproduction of inhomogeneous Schottky diodes' forward characteristics over wide high-temperature and bias ranges, is proposed.
Gheorghe Brezeanu +5 more
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APL Materials, 2022 We report on vertical β-Ga2O3 power diodes with oxidized-metal Schottky contact (PtOx) and high permittivity (high-κ) dielectric (ZrO2) field plate to improve reverse blocking at both Schottky contact surfaces and edges.
Esmat Farzana +5 more
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Simulation of forward current-voltage characteristics for Schottky diodes with MOS trenches
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2021 Present work is devoted to the development of a mathematical model for the forward current-voltage characteristic of Schottky diodes with a metal – oxide – semiconductor (MOS) trench structure, which takes into account the accumulation of the main ...
J. A. Solovjov
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Current Transport Behaviour of Au/n-GaAs Schottky Diodes Grown on Ge Substrate With Different Epitaxial Layer Thickness Over a Wide Temperature Range [PDF]
Журнал нано- та електронної фізики, 2011 The work presents temperature dependent forward and reverse current-voltage (I-V) analyses of n-GaAs/Au Schottky Diodes grown on n+ Ge substrate with different epitaxial layer thicknesses.
N. Padha +3 more
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Effect of Series Resistance and Interface State Density on Electrical Characteristics of Au/SiO2/n-GaN Schottky Diodes [PDF]
Журнал нано- та електронної фізики, 2011 We have investigated the current-voltage (I−V) characteristics of (Au/SiO2/n-GaN) metal-insulator-semiconductor (MIS) Schottky diodes and compared with (Au/n-GaN) metal-semiconductor (MS) Schottky diode. The effect of SiO2 on the surface preparation of n-
M. Siva Pratap Reddy +3 more
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2012 International Electron Devices Meeting, 2012 High-performance Schottky diodes based on amorphous IGZO (Indium-Gallium-Zinc Oxide) semiconductor were fabricated and fully characterized. S-parameter measurements and subsequent analysis prove that these diodes have a cut-off frequency over 900MHz at 0V bias, making these diodes a promising choice for UHF applications, such as energy-harvesters for ...
Vaisman Chasin, Adrian Nelson +9 more
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Design of Strained Ge Schottky Diode on Si Substrate for Microwave Rectifier Circuit
Advances in Condensed Matter Physics, 2020 In recent years, wireless energy transmission technology has developed rapidly and has received increasing attention in the industry. For microwave wireless energy transfer system applications, Ge Schottky diodes as the core components of the rectifier ...
Wei-Feng Liu +4 more
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IEEE Journal of the Electron Devices SocietyGate-tunable Schottky barrier diodes find many applications in logic transistors, photodiodes, and sensors. In this work, the electrical properties of Schottky barrier diodes with graphene/pentacene junctions and additional gates were investigated in ...
Tae Yoon Lee +3 more
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