A Stable and Efficient Pt/n-Type Ge Schottky Contact That Uses Low-Cost Carbon Paste Interlayers
Crystals, 2021 Ge-based Schottky diodes find applications in high-speed devices. However, Fermi-level pinning is a major issue for the development of Ge-based diodes. This study fabricates a Pt/carbon paste (CP)/Ge Schottky diode using low-cost CP as an interlayer. The
Pei-Te Lin +8 more
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Integration of Silicon-Carbide Schottky Diodes with High-Frequency Transformer [PDF]
, 2022 This paper presents a novel and compact structure of integrated silicon-carbide (SiC) Schottky diodes with highfrequency (HF) transformer. A prototype HF transformer in the shape that is similar to a tokamak is designed for the integration with SiC ...
Yao, Weichong +5 more
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A Compact Model for SiC Schottky Barrier Diodes Based on the Fundamental Current Mechanisms [PDF]
, 2020 We develop a complete compact model to describe the forward current, reverse current, and capacitance of SiC Schottky barrier diodes. The model is based on the fundamental current mechanisms of thermionic emission and tunneling, and is usable over a ...
Dimitrijev, Sima, Nicholls, Jordan R
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IEEE Access, 2020 Amorphous In-Ga-Zn-O (IGZO) is a high-mobility semiconductor employed in modern thin-film transistors for displays and it is considered as a promising material for Schottky diode-based rectifiers.
Veronika Ulianova +11 more
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Description and Verification of the Fundamental Current Mechanisms in Silicon Carbide Schottky Barrier Diodes [PDF]
, 2019 Attempts to model the current through Schottky barrier diodes using the two fundamental mechanisms of thermionic emission and tunnelling are adversely impacted by defects and second order effects.
Nicholls, Jordan +3 more
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IEEE Journal of the Electron Devices Society, 2020 A practical model, adequate for full reproduction of inhomogeneous Schottky diodes' forward characteristics over wide high-temperature and bias ranges, is proposed.
Gheorghe Brezeanu +5 more
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APL Materials, 2022 We report on vertical β-Ga2O3 power diodes with oxidized-metal Schottky contact (PtOx) and high permittivity (high-κ) dielectric (ZrO2) field plate to improve reverse blocking at both Schottky contact surfaces and edges.
Esmat Farzana +5 more
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Simulation of forward current-voltage characteristics for Schottky diodes with MOS trenches
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2021 Present work is devoted to the development of a mathematical model for the forward current-voltage characteristic of Schottky diodes with a metal – oxide – semiconductor (MOS) trench structure, which takes into account the accumulation of the main ...
J. A. Solovjov
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Current Transport Behaviour of Au/n-GaAs Schottky Diodes Grown on Ge Substrate With Different Epitaxial Layer Thickness Over a Wide Temperature Range [PDF]
Журнал нано- та електронної фізики, 2011 The work presents temperature dependent forward and reverse current-voltage (I-V) analyses of n-GaAs/Au Schottky Diodes grown on n+ Ge substrate with different epitaxial layer thicknesses.
N. Padha +3 more
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Effect of Series Resistance and Interface State Density on Electrical Characteristics of Au/SiO2/n-GaN Schottky Diodes [PDF]
Журнал нано- та електронної фізики, 2011 We have investigated the current-voltage (I−V) characteristics of (Au/SiO2/n-GaN) metal-insulator-semiconductor (MIS) Schottky diodes and compared with (Au/n-GaN) metal-semiconductor (MS) Schottky diode. The effect of SiO2 on the surface preparation of n-
M. Siva Pratap Reddy +3 more
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