Results 11 to 20 of about 10,847 (275)
Effects of deposition temperature on Mo/SiC Schottky contacts
AIP Advances, 2022 We report on the results of our investigation of the effect of deposition temperature on molybdenum (Mo) used as Schottky contacts to fabricate silicon carbide (SiC) Schottky barrier diodes.
Tom N. Oder, Sai B. Naredla
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2012 International Electron Devices Meeting, 2012 High-performance Schottky diodes based on amorphous IGZO (Indium-Gallium-Zinc Oxide) semiconductor were fabricated and fully characterized. S-parameter measurements and subsequent analysis prove that these diodes have a cut-off frequency over 900MHz at 0V bias, making these diodes a promising choice for UHF applications, such as energy-harvesters for ...
Vaisman Chasin, Adrian Nelson +9 more
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Electronics Letters, 2021 Gallium nitride based high‐power electronic devices are now in full swing. However, the phenomenon that the gallium nitride Schottky diodes break down prematurely without reaching the gallium nitride material limit is unsolved.
Jian Li +4 more
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Graphene–Silicon Schottky Diodes for Photodetection [PDF]
IEEE Transactions on Nanotechnology, 2018 5 pages, 9 ...
Di Bartolomeo, Antonio +4 more
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Examinations of Selected Thermal Properties of Packages of SiC Schottky Diodes
Metrology and Measurement Systems, 2016 This paper describes the study of thermal properties of packages of silicon carbide Schottky diodes. In the paper the packaging process of Schottky diodes, the measuring method of thermal parameters, as well as the results of measurements are presented ...
Bisewski Damian +4 more
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A generalized drift-diffusion model for rectifying Schottky contact simulation [PDF]
, 2010 We present a discussion on the modeling of Schottky barrier rectifying contacts (diodes) within the framework of partial-differential-equation-based physical simulations.
Bonani, Fabrizio +11 more
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Electron trapping effects in SiC Schottky diodes: Review and comment
, 2021 SiC devices exhibit a number of detrimental second order effects which are caused by electrically active traps. The majority of studies into traps in SiC devices have been for SiC metal-oxide-semiconductor (MOS) devices.
Nicholls, Jordan R
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Integration of Novel High-Frequency Transformer with Silicon-Carbide Schottky Diodes
, 2022 This paper presents a novel and compact structure which integrates silicon-carbide (SiC) Schottky diodes within a high-frequency transformer (HFT). The proposed structure would reduce the volume of a power converter and in turn the system to which it is ...
Yao, Weichong +4 more
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High quality Schottky contacts for limiting leakage currents in Ge-based Schottky barrier MOSFETs [PDF]
, 2009 Schottky barrier (SB) Ge channel MOSFETs suffer from high drain-body leakage at the required elevated substrate doping concentrations to suppress source-drain leakage.
Husain, M.K., Li, X., de Groot, C.H.
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Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]
, 2008 Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio +3 more
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