A Method and Criterion for Repetitive Surge Current in Silicon Carbide Schottky Diodes
IEEE AccessThe need for efficient power-conversion systems in renewable energy, electric vehicles, and industrial power applications has motivated the development of wide-bandgap power semiconductor devices, such as the SiC Schottky diode.
Jenny Damcevska +3 more
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A Novel 183GHz Subharmonic Schottky Diode Mixer [PDF]
, 1992 PhDThe technique of microwave . limb sounding -from space represents a very powerful tool for determining the atmospheric processes involved in ozone depletion, the greenhouse effect, acid rain, etc..
Mann, Christopher Mark
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Schottky diodes, sensors, biomedical technologies [PDF]
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019 Diodes Schottky characteristics, sensors of liquid media and principal aspects connected with bioresonans effects are described.
V. V. Baranov
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A generalized drift-diffusion model for rectifying Schottky contact simulation [PDF]
, 2010 We present a discussion on the modeling of Schottky barrier rectifying contacts (diodes) within the framework of partial-differential-equation-based physical simulations.
Bonani, Fabrizio +11 more
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High quality Schottky contacts for limiting leakage currents in Ge-based Schottky barrier MOSFETs [PDF]
, 2009 Schottky barrier (SB) Ge channel MOSFETs suffer from high drain-body leakage at the required elevated substrate doping concentrations to suppress source-drain leakage.
Husain, M.K., Li, X., de Groot, C.H.
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Lateral GaN Schottky superjunction diodes with buried p-GaN by NH3-MBE [PDF]
APL Electronic DevicesIn this work, we demonstrate lateral GaN Schottky superjunction diodes using a p–n–p layer structure. The lateral nature of these devices circumvents the difficulties in achieving charge balance with etch and regrowth techniques. The p–n–p layer Schottky
Z. J. Biegler +4 more
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Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]
, 2008 Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio +3 more
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Development of High Power 220 GHz Frequency Triplers Based on Schottky Diodes
IEEE Access, 2020 In this paper, the development of two high power 220 GHz frequency triplers is proposed. The GaAs Schottky diodes with six nodes are applied to realize high efficiency 220 GHz tripler, while the application of GaN Schottky diodes with eight nodes is ...
Yilin Yang +6 more
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Electron trapping effects in SiC Schottky diodes: Review and comment
, 2021 SiC devices exhibit a number of detrimental second order effects which are caused by electrically active traps. The majority of studies into traps in SiC devices have been for SiC metal-oxide-semiconductor (MOS) devices.
Nicholls, Jordan R
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Integration of Novel High-Frequency Transformer with Silicon-Carbide Schottky Diodes
, 2022 This paper presents a novel and compact structure which integrates silicon-carbide (SiC) Schottky diodes within a high-frequency transformer (HFT). The proposed structure would reduce the volume of a power converter and in turn the system to which it is ...
Yao, Weichong +4 more
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