Results 31 to 40 of about 137,897 (277)
Electrodeposited Ni/Ge and germanide schottky barriers for nanoelectronics applications
, 2009 In recent years metal/semiconductor Schottky barriers have found numerous applications in nanoelectronics. The work presented in this thesis focuses on the improvement of a few of the relevant devices using electrodeposition of metal on Ge for Schottky ...
Husain, Muhammad Khaled
core +2 more sources
IEEE Journal of the Electron Devices Society, 2017 AlN Schottky diodes with various device geometries were fabricated on sapphire substrate and their temperature-dependent current-voltage characteristics were analyzed.
Houqiang Fu +4 more
doaj +1 more source
Advanced Electronic Materials, 2022 Transparent and flexible diodes could be useful for future transparent electronics. Here such diodes are discussed with electrical breakdown (EBR) comprises of W/ZnO/ITO structure on the polyethylene terephthalate substrates.
Jamal Aziz +8 more
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Impact of Annealing on CuInSe2 Thin Films and Its Schottky Interface [PDF]
Журнал нано- та електронної фізики, 2011 The room temperature current–voltage (I-V) characteristics of the Al/p-CuInSe2 Schottky Diodes fabricated on thermally evaporated CIS thin films, before and after annealing, were studied. Prior to their diode formation, the undertaken CIS thin films were
U. Parihar +5 more
doaj
High-frequency performance of Schottky source/drain silicon pMOS devices [PDF]
, 2008 A radio-frequency performance of 85-nm gate-length p-type Schottky barrier (SB) with PtSi source/drain materials is investigated. The impact of silicidation annealing temperature on the high-frequency behavior of SB MOSFETs is analyzed using an extrinsic
Snyder, J. +6 more
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Covalent Functionalization of 2D Semiconductors: A Roadmap to Advanced Electronic Devices
Advanced Functional Materials, EarlyView.This Review presents recent advances in the covalent functionalization strategies for two‐dimensional semiconductors and their implementation in modern technologies. Layered materials are modified through diverse molecular chemistries (e.g., thiols, diazonium salts, alkyl halides, and electron‐deficient species) to tailor their surface properties ...
Ramiro Quirós‐Ovies +2 more
wiley +1 more source
Scientific Reports, 2021 Multi-frequency multi-bit programmable amplitude modulation (AM) of spoof surface plasmon polaritons (SPPs) is realized at millimeter wave frequencies with interdigital split-ring resonators (SRRs) and In-Ga-Zn-O (IGZO) Schottky diodes.
Haotian Ling +7 more
doaj +1 more source
Characterisation of Schottky diodes and dielectric materials for millimeter wave and THz applications [PDF]
, 2017 This thesis work contributes to two fields of research: Schottky diode characterisation and dielectric material characterisation, both for millimeter wave and THz applications. Schottky diodes are characterised for their electrical, thermal, noise and RF
Khanal, Subash
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Advanced Functional Materials, EarlyView.Rapid thermal annealing reconstructs the BCFO/Nb:STO interface into an atomically thin reconstructed interfacial layer, which reshapes the tunneling barrier and converts a high‐TER ferroelectric tunnel junction into an intrinsically nonlinear, self‐rectifying device.
Hojin Lee +21 more
wiley +1 more source
, 2023 β-Ga2O3 Schottky barrier diodes have undergone rapid progress in research and development for power electronic applications. This paper reviews state-of-the-art β-Ga2O3 rectifier technologies, including advanced diode architectures that have enabled ...
Man Hoi Wong, Wong, Man Hoi
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