Results 31 to 40 of about 10,847 (275)
Avalanche robustness of SiC Schottky diode [PDF]
Microelectronics Reliability, 2016 Reliability is one of the key issues for the application of Silicon carbide (SiC) diode in high power conversion systems. For instance, in high voltage direct current (HVDC) converters, the devices can be submitted to high voltage transients which yield to avalanche.
Dchar, Ilyas +2 more
openaire +2 more sources
Effect of Series Resistance and Interface State Density on Electrical Characteristics of Au/SiO2/n-GaN Schottky Diodes [PDF]
Журнал нано- та електронної фізики, 2011 We have investigated the current-voltage (I−V) characteristics of (Au/SiO2/n-GaN) metal-insulator-semiconductor (MIS) Schottky diodes and compared with (Au/n-GaN) metal-semiconductor (MS) Schottky diode. The effect of SiO2 on the surface preparation of n-
M. Siva Pratap Reddy +3 more
doaj
Design of Strained Ge Schottky Diode on Si Substrate for Microwave Rectifier Circuit
Advances in Condensed Matter Physics, 2020 In recent years, wireless energy transmission technology has developed rapidly and has received increasing attention in the industry. For microwave wireless energy transfer system applications, Ge Schottky diodes as the core components of the rectifier ...
Wei-Feng Liu +4 more
doaj +1 more source
, 2023 β-Ga2O3 Schottky barrier diodes have undergone rapid progress in research and development for power electronic applications. This paper reviews state-of-the-art β-Ga2O3 rectifier technologies, including advanced diode architectures that have enabled ...
Man Hoi Wong, Wong, Man Hoi
core +1 more source
IEEE Journal of the Electron Devices SocietyGate-tunable Schottky barrier diodes find many applications in logic transistors, photodiodes, and sensors. In this work, the electrical properties of Schottky barrier diodes with graphene/pentacene junctions and additional gates were investigated in ...
Tae Yoon Lee +3 more
doaj +1 more source
Advanced Electronic Materials, 2022 Transparent and flexible diodes could be useful for future transparent electronics. Here such diodes are discussed with electrical breakdown (EBR) comprises of W/ZnO/ITO structure on the polyethylene terephthalate substrates.
Jamal Aziz +8 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2017 AlN Schottky diodes with various device geometries were fabricated on sapphire substrate and their temperature-dependent current-voltage characteristics were analyzed.
Houqiang Fu +4 more
doaj +1 more source
Advanced Functional Materials, EarlyView.This work demonstrates a scalable, low‐temperature synthesis strategy that combines a thioacetamide (TA)‐based dual sulfur source with CdS chlorination, enabling the formation of high‐quality Sb2S3 with a reduced open‐circuit voltage loss, resulting in improved device efficiency.
Vijay C. Karade +16 more
wiley +1 more source
Impact of Annealing on CuInSe2 Thin Films and Its Schottky Interface [PDF]
Журнал нано- та електронної фізики, 2011 The room temperature current–voltage (I-V) characteristics of the Al/p-CuInSe2 Schottky Diodes fabricated on thermally evaporated CIS thin films, before and after annealing, were studied. Prior to their diode formation, the undertaken CIS thin films were
U. Parihar +5 more
doaj
Advanced Functional Materials, EarlyView.Metasurfaces and other structured photonic environments can dramatically modify the absorption and/or light emission of semiconductors. However, the consequences of these changes on the temperature of the system are not well understood. The authors address this problem for colloidal nanocrystals and leverage their findings to convert light into ...
Hugo Kowalczyk +7 more
wiley +1 more source