Results 51 to 60 of about 10,847 (275)

Investigation of Current-Voltage Characteristics of Ni/GaN Schottky Barrier Diodes for Potential HEMT Applications [PDF]

Журнал нано- та електронної фізики, 2011
In the present work, the I-V characteristics of Ni/GaN Schottky diodes have been studied. The Schottky diodes, having different sizes using Ni/Au and ohmic contacts using Ti/Al/Ni/Au were made on n-GaN.
Ashish Kumar, Seema Vinayak, R. Singh
doaj  

Dry etch damage anisotropy and damage mitigation using hot H3PO4 in (001) β-Ga2O3 Schottky diodes [PDF]

APL Electronic Devices
β-Ga2O3 is a promising ultra-wide bandgap semiconductor for power devices. Here, we report on the fabrication of Schottky barrier diodes on (001) β-Ga2O3 to investigate both dry etch damage anisotropy and damage mitigation using H3PO4.
Steve Rebollo, Wolfgang Buchmaier, Sriram Krishnamoorthy, James S. Speck   +3 more
doaj   +1 more source

GaN Nanowire Schottky Barrier Diodes

IEEE Transactions on Electron Devices, 2017
A new concept of vertical gallium nitride (GaN) Schottky barrier diode based on nanowire (NW) structures and the principle of dielectric REduced SURface Field (RESURF) is proposed in this paper. High-threading dislocation density in GaN epitaxy grown on foreign substrates has hindered the development and commercialization of vertical GaN power devices.
Gourab Sabui, Vitaly Z. Zubialevich, Mary White, Pietro Pampili, Peter J. Parbrook, Mathew McLaren, Miryam Arredondo-Arechavala, Z. John Shen   +7 more
openaire   +4 more sources

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Effects of deposition temperature on the electrical properties of Ti/SiC Schottky barrier diodes

AIP Advances, 2017
Ti Schottky contacts were deposited on n-type 4H-SiC at different temperatures ranging from 28 oC to 900 oC using a magnetron sputtering deposition system to fabricate Schottky barrier diodes.
Tom N. Oder, Krishna C. Kundeti, Nicholas Borucki, Sundar B. Isukapati   +3 more
doaj   +1 more source

Fabrication and characterization of optical float-zone (100) β-Ga2O3 Schottky diodes [PDF]

AIP Advances
We conducted a rapid fabrication of Ga2O3 vertical Schottky barrier diodes using Ti/Au for ohmic contacts and Ni/Au for Schottky contacts on a (100) Sn-doped β-Ga2O3 grown by the optical float-zone method and analyzed the device characteristics and ...
Zubear Nowshad Pasha, Vijayakumar Subramanian, Ved Krishna, Konstantinos Floros, Ingo Ludtke, Shanthi Subashchandran, S. Ganesamoorthy, Naresh Gunasekar   +7 more
doaj   +1 more source

Breakdown Characteristics of Schottky Barrier Diodes Used as Bypass Diodes in Photovoltaic Modules under Lightning Surges

Energies, 2023
Damage to photovoltaic power-generation systems by lightning causes the failure of bypass diodes (BPDs) in solar cell modules. Bypass diodes damaged by lightning experience high-resistance open- or short-circuit failures.
Toshiyuki Hamada, Ikuo Nanno, Norio Ishikura, Masayuki Fujii, Shinichiro Oke   +4 more
doaj   +1 more source

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

Comprehensive investigation of GaN and AlN-on-GaN JBS diodes: optimizing inter-p + spacing for high-power applications

Discover Electronics
A thorough investigation of Gallium Nitride and Aluminum Nitride-on-Gallium Nitride Junction Barrier Schottky diodes, focusing on inter-p + spacings of 0.5 to 2.5 μm, was conducted to optimize the performance for high-power, high-frequency, and high ...
Sana Nasir, Gul Hassan, Habib Ahmad
doaj   +1 more source

In Situ Regenerative Adduct Assisted p‐Type Doping of Organic Semiconductor

Advanced Materials, EarlyView.
An in situ regenerative adduct‐assisted (IRAA) doping strategy is introduced for p‐type doping of organic semiconductors. A regenerating adduct serves as the dopant, enabling highly efficient doping with a choice of counterions. The generality of this approach provides a scalable route to dope a wide range of hole‐transport materials with high thermal ...
Brijesh K. Patel, Arya Vidhan, Shubham Gupta, Vaishali Arunachalam, Simantini Nayak, Neeraj Bhatt, Ravi Shankar Singh, Shaibal K. Sarkar, Pabitra K. Nayak   +8 more
wiley   +1 more source