Results 51 to 60 of about 10,859 (269)

A Novel 183GHz Subharmonic Schottky Diode Mixer [PDF]

, 1992
PhDThe technique of microwave . limb sounding -from space represents a very powerful tool for determining the atmospheric processes involved in ozone depletion, the greenhouse effect, acid rain, etc..
Mann, Christopher Mark
core  

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

Investigation of Current-Voltage Characteristics of Ni/GaN Schottky Barrier Diodes for Potential HEMT Applications [PDF]

Журнал нано- та електронної фізики, 2011
In the present work, the I-V characteristics of Ni/GaN Schottky diodes have been studied. The Schottky diodes, having different sizes using Ni/Au and ohmic contacts using Ti/Al/Ni/Au were made on n-GaN.
Ashish Kumar, Seema Vinayak, R. Singh
doaj  

Effects of deposition temperature on the electrical properties of Ti/SiC Schottky barrier diodes

AIP Advances, 2017
Ti Schottky contacts were deposited on n-type 4H-SiC at different temperatures ranging from 28 oC to 900 oC using a magnetron sputtering deposition system to fabricate Schottky barrier diodes.
Tom N. Oder, Krishna C. Kundeti, Nicholas Borucki, Sundar B. Isukapati   +3 more
doaj   +1 more source

Dry etch damage anisotropy and damage mitigation using hot H3PO4 in (001) β-Ga2O3 Schottky diodes [PDF]

APL Electronic Devices
β-Ga2O3 is a promising ultra-wide bandgap semiconductor for power devices. Here, we report on the fabrication of Schottky barrier diodes on (001) β-Ga2O3 to investigate both dry etch damage anisotropy and damage mitigation using H3PO4.
Steve Rebollo, Wolfgang Buchmaier, Sriram Krishnamoorthy, James S. Speck   +3 more
doaj   +1 more source

Electrically Coded Retinomorphic Spectrophotodetector

Advanced Materials, EarlyView.
Self‐powered retinomorphic pyro‐photodetector is demonstrated that avoids machine‐learning post‐processing and covers 365–940 nm. Electrostatic balancing of built‐in potential produces an electrical wavelength code, delivering <3 nm wavelength decoding accuracy with ∼46 µs response.
Mohit Kumar, Hyunmin Dang, Hyungtak Seo
wiley   +1 more source

Electroluminescence from 4H-SiC Schottky Diodes [PDF]

, 2000
We have observed electroluminescence from 4H-SiC Ni-Schottky diodes on 1015cm−3 nitrogen doped n-type epilayers. A high barrier Schottky contact will form an inversion layer close to it.
Q. ul-Wahab, F. H. C. Carlsson, J. P. Bergman, E. Janzén   +3 more
core   +1 more source

Comprehensive investigation of GaN and AlN-on-GaN JBS diodes: optimizing inter-p + spacing for high-power applications

Discover Electronics
A thorough investigation of Gallium Nitride and Aluminum Nitride-on-Gallium Nitride Junction Barrier Schottky diodes, focusing on inter-p + spacings of 0.5 to 2.5 μm, was conducted to optimize the performance for high-power, high-frequency, and high ...
Sana Nasir, Gul Hassan, Habib Ahmad
doaj   +1 more source

Breakdown Characteristics of Schottky Barrier Diodes Used as Bypass Diodes in Photovoltaic Modules under Lightning Surges

Energies, 2023
Damage to photovoltaic power-generation systems by lightning causes the failure of bypass diodes (BPDs) in solar cell modules. Bypass diodes damaged by lightning experience high-resistance open- or short-circuit failures.
Toshiyuki Hamada, Ikuo Nanno, Norio Ishikura, Masayuki Fujii, Shinichiro Oke   +4 more
doaj   +1 more source

Origin of Dark Current Robustness in Photomultiplication Organic Photodetectors Enabled by Ionic Conjugated Electron‐Blocking Layers

Advanced Materials, EarlyView.
Ionic conjugated polyelectrolyte electron‐blocking layers enable photomultiplication organic photodetectors with dark current robustness up to −10 V and external quantum efficiencies exceeding 3000%. Fowler–Nordheim tunneling, interfacial dipole, trap density of states, and noise analyses reveal how ionic conjugated polyelectrolytes suppress electron ...
Yelim Kang, Min Hun Jee, Shuai Zhang, Sang Heon Lee, Jung Min Ha, Xingchao Zhao, Xiaoling Ma, Huiseong Shin, Changhwan Shin, Soonyong Lee, Fujun Zhang, Jae Won Shim, Han Young Woo   +12 more
wiley   +1 more source