Results 71 to 80 of about 10,847 (275)

Charge recovery by vacuum annealing in β-Ga2O3 multi-fin trench Schottky barrier diodes [PDF]

open access: yesAPL Electronic Devices
In this work, we have demonstrated charge recovery in (001) β-Ga2O3 vertical structures after reactive ion etching. The charge recovery is achieved by annealing the etched structures under ultra-high vacuum.
Sushovan Dhara   +2 more
doaj   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

open access: yesAdvanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang   +5 more
wiley   +1 more source

Improving the reliability of Schottky diodes under the influence of electrostatic discharges [PDF]

open access: yesTekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2012
Experimental studies of Schottky diodes with molybdenum barrier structure showed that resistance of the structures to electrostatic discharge depends on the design parameters, as well as on guard ring diffusion depth.
Sоlоdukha V. A.   +4 more
doaj   +2 more sources

Electrodeposited Ni/Ge and germanide schottky barriers for nanoelectronics applications

open access: yes, 2009
In recent years metal/semiconductor Schottky barriers have found numerous applications in nanoelectronics. The work presented in this thesis focuses on the improvement of a few of the relevant devices using electrodeposition of metal on Ge for Schottky ...
Husain, Muhammad Khaled
core  

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

open access: yesAdvanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen   +9 more
wiley   +1 more source

Comparison between 3.3kV 4H-SiC Schottky and bipolar diodes

open access: yes, 2008
Silicon Carbide Schottky and bipolar diodes have been fabricated with a breakdown voltage of 3.3kV. Diodes have been packaged and measured up to 300°C.
J. Millan   +15 more
core   +1 more source

Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing

open access: yesAdvanced Science, EarlyView.
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo   +12 more
wiley   +1 more source

Giant Conductivity Modulation and Chemical Neuromodulation via Proton‐Electron Coupling in a Hydrogen‐Bonded Coordination Polymer

open access: yesAdvanced Science, EarlyView.
A “de‐doping” strategy positions mixed protonic–electronic conductors (MPECs) as adaptive neuromorphic platforms with dynamically tunable transport. Co‐BAND achieves giant conductivity modulation (>106) and chemically tunable synaptic plasticity. Analogous to biological neuromodulation, solvent vapors dynamically reprogram the device's learning rules ...
Kwangmin Park   +10 more
wiley   +1 more source

A Novel 183GHz Subharmonic Schottky Diode Mixer

open access: yes, 1992
PhDThe technique of microwave . limb sounding -from space represents a very powerful tool for determining the atmospheric processes involved in ozone depletion, the greenhouse effect, acid rain, etc..
Mann, Christopher Mark
core  

A Universal Approach to Enhancing Silicon Hot‐Carrier Photodetectors for CMOS‐Compatible SWIR Imaging

open access: yesAdvanced Science, EarlyView.
Silicon hot‐carrier photodetectors offer a CMOS‐compatible pathway for SWIR detection but suffer from intrinsically low quantum efficiency. Here, we introduce a quasi‐generalized antireflection coating (QARC) that universally enhances optical absorption and quantum efficiency, enabling the first CMOS‐compatible SWIR imaging with silicon hot‐carrier ...
Eui‐Hyoun Ryu   +11 more
wiley   +1 more source

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