Results 71 to 80 of about 137,897 (277)

Schottky diodes on GaN (gallium nitride) semiconductors [PDF]

, 2000
The electrical characteristics of Au and Ni Schottky barriers on n-type GaN grown by gas phase molecular beam epitaxy were investigated. Capacitance-Voltage and Current-Voltage techniques were used to calculate the barrier height, carrier concentration ...
Vijayan, Veena
core   +2 more sources

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

Advanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source

Analytical Theory of Thin-Film Schottky Diodes [PDF]

, 2019
Thin-film electronics straddles the border between bulk electronics and the quantum realm. Though thin-film devices are increasingly prevalent, our understanding of their operation remains incomplete.
Zhang, Jiawei, Song, Aimin; id_orcid, Wilson, Joshua   +2 more
core   +2 more sources

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

The Fundamental Current Mechanisms in SiC Schottky Barrier Diodes: Physical Model, Experimental Verification and Implications

, 2019
In this paper, we derive the equations for the current-voltage characteristics of SiC Schottky barrier diodes from the fundamental physics of thermionic emission and tunneling, as the two fundamental current mechanisms. An excellent fit between the model
J. Nicholls, Nicholls, J, J. Han, Han, J, Dimitrijev, S, P. Tanner, Tanner, P, S. Dimitrijev   +7 more
core   +1 more source

Photonic‐Enabled Energy‐Efficient Transparent Neuromorphic Computing Devices: A Review

Advanced Science, EarlyView.
Transparent photonic neuromorphic computing devices merge optics and brain‐inspired computing to overcome von Neumann bottlenecks with ultrafast, low‐energy processing. By exploiting transparent oxides, 2D materials, phase‐change materials, and hybrid heterostructures, these platforms enable photonic synapses, memory, and logic for see‐through edge ...
Shuvaraj Ghosh, Ki‐bum Lee, Junghyeon Lee, Seunghee Cho, Malkeshkumar Patel, Hangfei Li, Yu Wen, Ye Zhou, Joondong Kim   +8 more
wiley   +1 more source

Demonstration of KV-class β-Ga2O3 trench junction barrier Schottky diodes with space-modulated junction termination extension [PDF]

APL Electronic Devices
In this work, we report on the design and fabrication of p-NiO/Ga2O3 trench junction barrier schottky diodes (JBSDs) integrated with space-modulated junction termination extension (SM-JTE) and compare the performance with planar Ni/Ga2O3 schottky barrier
Advait Gilankar, Julian Gervassi-Saga, Martha R. McCartney, Nabasindhu Das, Chinmoy Nath Saha, Yizheng Liu, David Malcolm McComas, David J. Smith, Nidhin Kurian Kalarickal   +8 more
doaj   +1 more source

Carbon-Nanotube Schottky Diodes [PDF]

, 2006
Schottky diodes based on semiconducting single-walled carbon nanotubes are being developed as essential components of the next generation of submillimeter-wave sensors and sources.
Wong, Eric, Schlecht, Erich, Siegel, Peter, Hunt, Brian, Manohara, Harish   +4 more
core  

Observation of negative differential conductance in a reverse-biased Ni/Ge Schottky diode

, 2009
We report the experimental observation of negative differential conductance in a Ni/Ge Schottky diode. With the aid of theoretical models and numerical simulation we show that, at reverse bias, electons tunnel into the high electric field of the ...
Husain, Muhammad, Li, Xiaoli V., de Groot, Cornelis H.   +2 more
core   +1 more source

Anisotropic Memristive Switching in NbOCl2 Enabled by Directional Oxygen Ion Migration

Advanced Science, EarlyView.
This study investigates strongly orientation‐dependent memristive switching in anisotropic NbOCl2, observed exclusively along the in‐plane c‐axis. The switching originates from direction‐selective oxygen‐ion migration and vacancy propagation that modulate the Pd/NbOCl2 Schottky barrier, enabling short‐term plasticity.
Caokun Wang, Yun Ji, Sanchali Mitra, Yufei Shi, Haofei Zheng, Yee Sin Ang, Kah‐Wee Ang   +6 more
wiley   +1 more source