Results 71 to 80 of about 10,847 (275)
Charge recovery by vacuum annealing in β-Ga2O3 multi-fin trench Schottky barrier diodes [PDF]
In this work, we have demonstrated charge recovery in (001) β-Ga2O3 vertical structures after reactive ion etching. The charge recovery is achieved by annealing the etched structures under ultra-high vacuum.
Sushovan Dhara +2 more
doaj +1 more source
Ferroelectric Devices for In‐Memory and In‐Sensor Computing
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang +5 more
wiley +1 more source
Improving the reliability of Schottky diodes under the influence of electrostatic discharges [PDF]
Experimental studies of Schottky diodes with molybdenum barrier structure showed that resistance of the structures to electrostatic discharge depends on the design parameters, as well as on guard ring diffusion depth.
Sоlоdukha V. A. +4 more
doaj +2 more sources
Electrodeposited Ni/Ge and germanide schottky barriers for nanoelectronics applications
In recent years metal/semiconductor Schottky barriers have found numerous applications in nanoelectronics. The work presented in this thesis focuses on the improvement of a few of the relevant devices using electrodeposition of metal on Ge for Schottky ...
Husain, Muhammad Khaled
core
Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen +9 more
wiley +1 more source
Comparison between 3.3kV 4H-SiC Schottky and bipolar diodes
Silicon Carbide Schottky and bipolar diodes have been fabricated with a breakdown voltage of 3.3kV. Diodes have been packaged and measured up to 300°C.
J. Millan +15 more
core +1 more source
Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo +12 more
wiley +1 more source
A “de‐doping” strategy positions mixed protonic–electronic conductors (MPECs) as adaptive neuromorphic platforms with dynamically tunable transport. Co‐BAND achieves giant conductivity modulation (>106) and chemically tunable synaptic plasticity. Analogous to biological neuromodulation, solvent vapors dynamically reprogram the device's learning rules ...
Kwangmin Park +10 more
wiley +1 more source
A Novel 183GHz Subharmonic Schottky Diode Mixer
PhDThe technique of microwave . limb sounding -from space represents a very powerful tool for determining the atmospheric processes involved in ozone depletion, the greenhouse effect, acid rain, etc..
Mann, Christopher Mark
core
Silicon hot‐carrier photodetectors offer a CMOS‐compatible pathway for SWIR detection but suffer from intrinsically low quantum efficiency. Here, we introduce a quasi‐generalized antireflection coating (QARC) that universally enhances optical absorption and quantum efficiency, enabling the first CMOS‐compatible SWIR imaging with silicon hot‐carrier ...
Eui‐Hyoun Ryu +11 more
wiley +1 more source

