Results 71 to 80 of about 10,859 (269)
Arithmetic Logic Unit Circuit Based on Zinc Oxide Nanogap Schottky Diodes
Advanced Electronic MaterialsThe intrinsic high non‐linearity of Schottky diodes with the latest improvements in performance, material, and design novelties have made them invaluable in the emerging devices ecosystem.
Zhanibek Bizak +6 more
doaj +1 more source
Advanced Materials Technologies, EarlyView.This work highlights the impact of incorporating graphene nanoflakes into precursor inks of MAPbBr3 for inkjet‐printed optoelectronic device applications. A substantial modification of the crystallization dynamics is reported despite miniscule concentrations.
Kenneth Lobo +12 more
wiley +1 more source
Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics
Advanced Materials Technologies, EarlyView.In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald +3 more
wiley +1 more source
Ti Schottky barrier diodes on n-type 6H-SiC [PDF]
, 2001 Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes (SBD) were fabricated. They showed good rectification characteristics from room temperature to 200degreesC. At low current density.
Liu ZL Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China. +5 more
core
METALLIC POLYTHIOPHENE INORGANIC SEMICONDUCTOR SCHOTTKY DIODES [PDF]
, 1993 An examination of the rectification properties of organic conductor/inorganic semiconductor/metal Schottky diodes has been made, in which freshly prepared polythiophene has been used as metal, and n-Si and n-GaAs as semiconductors.
KOLELI, F, TURUT, A
core +1 more source
Improving the reliability of Schottky diodes under the influence of electrostatic discharges [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2012 Experimental studies of Schottky diodes with molybdenum barrier structure showed that resistance of the structures to electrostatic discharge depends on the design parameters, as well as on guard ring diffusion depth.
Sоlоdukha V. A. +4 more
doaj +2 more sources
Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors
AIP Advances, 2019 This paper presents the electrical comparison of Au and Ni/Au gated HEMT devices and diodes. Au Schottky diodes on an AlGaN/GaN heterostructure exhibit better electrical performance in comparison to conventional Ni/Au diodes with an improved Schottky ...
Ajay Kumar Visvkarma +6 more
doaj +1 more source
Charge recovery by vacuum annealing in β-Ga2O3 multi-fin trench Schottky barrier diodes [PDF]
APL Electronic DevicesIn this work, we have demonstrated charge recovery in (001) β-Ga2O3 vertical structures after reactive ion etching. The charge recovery is achieved by annealing the etched structures under ultra-high vacuum.
Sushovan Dhara +2 more
doaj +1 more source
Ferroelectric Devices for In‐Memory and In‐Sensor Computing
Advanced Science, EarlyView.Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang +5 more
wiley +1 more source
Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices
Advanced Science, EarlyView.Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen +9 more
wiley +1 more source