Results 81 to 90 of about 10,847 (275)
Development of photocatalysis‐membrane separation reactor systems for aqueous pollutant removal
PhotoMat, EarlyView., 2023 Abstract Background In our rapidly expanding society, the demand for clean water has steadily emerged as one of the most critical issues, promoting the development of numerous water treatment strategies. Aims Coupling photocatalysis and membrane separation technology provides an energy saving and environment‐friendly as well as sustainable method for ...
Junyang Zhang +3 more
wiley +1 more source
A 300 GHz balanced doubler based on planar Schottky diodes
Dianzi Jishu Yingyong, 2019 The structure and dimension of Schottky diode were designed. The loss at high frequency was reduced using a quasi-whisker contacted anode structure by a metal finger akin to an air bridge.
Zhang Lisen +6 more
doaj +1 more source
Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks
Advanced Science, EarlyView.Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley +1 more source
Demonstration of KV-class β-Ga2O3 trench junction barrier Schottky diodes with space-modulated junction termination extension [PDF]
APL Electronic DevicesIn this work, we report on the design and fabrication of p-NiO/Ga2O3 trench junction barrier schottky diodes (JBSDs) integrated with space-modulated junction termination extension (SM-JTE) and compare the performance with planar Ni/Ga2O3 schottky barrier
Advait Gilankar +8 more
doaj +1 more source
Electroluminescence from 4H-SiC Schottky Diodes
, 2000 We have observed electroluminescence from 4H-SiC Ni-Schottky diodes on 1015cm−3 nitrogen doped n-type epilayers. A high barrier Schottky contact will form an inversion layer close to it.
Q. ul-Wahab +3 more
core +1 more source
Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors
Advanced Science, EarlyView.This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung +7 more
wiley +1 more source
Space-charge-limited currents in GaN Schottky diodes
, 2005 Unusual dark current voltage (I-V) characteristics were observed in GaN Schottky diodes. I-V characteristics of the GaN Schottky diodes were measured down to the magnitude of 10(-14) A.
Yang H +6 more
core
Fabrication of Schottky diodes for terahertz imaging
, 2011 In this paper we present design, fabrication and characterization of Schottky terahertz diodes. The diode is based on a Ti/n-GaAs junction with very low junction capacitance.
M. Ortolani +6 more
core +1 more source
Photonic‐Enabled Energy‐Efficient Transparent Neuromorphic Computing Devices: A Review
Advanced Science, EarlyView.Transparent photonic neuromorphic computing devices merge optics and brain‐inspired computing to overcome von Neumann bottlenecks with ultrafast, low‐energy processing. By exploiting transparent oxides, 2D materials, phase‐change materials, and hybrid heterostructures, these platforms enable photonic synapses, memory, and logic for see‐through edge ...
Shuvaraj Ghosh +8 more
wiley +1 more source
Influence of the gate edge on the reverse leakage current of AlGaN/GaN HEMTs
AIP Advances, 2015 By comparing the Schottky diodes of different area and perimeter, reverse gate leakage current of AlGaN/GaN high mobility transistors (HEMT) at gate bias beyond threshold voltage is studied.
YongHe Chen +5 more
doaj +1 more source