Results 91 to 100 of about 10,859 (269)
Anisotropic Memristive Switching in NbOCl2 Enabled by Directional Oxygen Ion Migration
Advanced Science, EarlyView.This study investigates strongly orientation‐dependent memristive switching in anisotropic NbOCl2, observed exclusively along the in‐plane c‐axis. The switching originates from direction‐selective oxygen‐ion migration and vacancy propagation that modulate the Pd/NbOCl2 Schottky barrier, enabling short‐term plasticity.
Caokun Wang +6 more
wiley +1 more source
SiC Schottky Diodes and Polyphase Buck Converters [PDF]
, 2007 The turn-on characteristics of a SiC Schottky diode are analyzed theoretically, by simulation, and by experiment. The static characteristics of SiC Schottky diodes and Si junction diodes are analyzed for normal and high temperatures.
Galigekere, Veda Prakash N.
core +1 more source
Influence of the gate edge on the reverse leakage current of AlGaN/GaN HEMTs
AIP Advances, 2015 By comparing the Schottky diodes of different area and perimeter, reverse gate leakage current of AlGaN/GaN high mobility transistors (HEMT) at gate bias beyond threshold voltage is studied.
YongHe Chen +5 more
doaj +1 more source
Flanking‐Group Engineering Unlocks Emerging Functionalities in Diketopyrrolopyrrole Semiconductors
Advanced Science, EarlyView.This review presents a comprehensive and unified perspective of flanking‐group engineering in Diketopyrrolopyrrole (DPP) based organic semiconductors that connects molecular‐level design with cross‐device functionalities. By integrating insights from molecular design, solid‐state packing, and device physics, this review seeks to establish general ...
Xiaoyun Wu +5 more
wiley +1 more source
Diamond Schottky diodes operating at 473 K [PDF]
, 2017 International audienceIn this paper, we present current-voltage characteristics of vertical and pseudo-vertical Diamond Schottky diodes operating up to 473 K. The functionality rate is greater than 75% for each samples.
Richard Monflier +15 more
core +1 more source
Scalable MoS2/Si Photodiode Arrays From Roll‐to‐Roll Mechanical Exfoliation
Advanced Science, EarlyView.A dry roll‐to‐roll route transforms mechanically exfoliated MoS2 flake networks into silicon‐integrated photodiode arrays. The MoS2/Si junctions generate photovoltaic output without applied bias, allowing illuminated pixels to locate light spots and reconstruct simple images.
Yigit Sozen +2 more
wiley +1 more source
Schottky diodes on GaN (gallium nitride) semiconductors [PDF]
, 2000 The electrical characteristics of Au and Ni Schottky barriers on n-type GaN grown by gas phase molecular beam epitaxy were investigated. Capacitance-Voltage and Current-Voltage techniques were used to calculate the barrier height, carrier concentration ...
Vijayan, Veena
core +1 more source
Engineering Slow‐Carrier Interfacial Recombination Enables Tailored Spectral Response
Advanced Science, EarlyView.This work demonstrates that weak‐drift slow carriers are preferentially captured at generic semiconductor surfaces/interfaces and recombine. This process is manipulated to achieve tailored spectral response. A tens of µm‐wide depletion region is created to observe surface collection rates for photocarriers generated at different positions.
Yibo Zhang +5 more
wiley +1 more source
Spectral characterisation of variable reactance devices [PDF]
, 1987 Low Noise Figure communication receivers require more efficient frequency converters. Frequency conversion and multiplication processes cannot take place without the existence of harmonics in the system and the inherent property of a nonlinear element is
Fifa, Ekaterini
core
Investigation of significantly high barrier height in Cu/GaN Schottky diode
AIP Advances, 2016 Current-voltage (I-V) measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu) Schottky diodes fabricated on Gallium Nitride (GaN) epitaxial films.
Manjari Garg +4 more
doaj +1 more source