Results 91 to 100 of about 10,847 (275)

ESD Behavior of AlGaN/GaN Schottky Diodes

, 2019
This experimental study reports behavior of Ni/Au-based AlGaN/GaN Schottky diodes under ESD conditions. A comparative study of diodes with/without recessed Schottky contact unfolds different degradation physics in each case.
Shrivastava, Mayank, Raghavan, Srinivasan, Gupta, Sayak Dutta, Shankar, Bhawani, Soni, Ankit   +4 more
core   +1 more source

Junction Physics and Architectural Paradigms in Optoelectronic Semiconductor Fibers

Advanced Science, EarlyView.
Optoelectronic fibers are emerging as a key platform for distributed sensing, energy harvesting, and optical communication in deformable systems. Their performance is fundamentally governed by junction formation under confined, dynamic processing conditions.
Hailiang Wang, Wenshu Ouyang, Yuhang Xiao, Wei Yan, Meifang Zhu   +4 more
wiley   +1 more source

Spectral characterisation of variable reactance devices [PDF]

, 1987
Low Noise Figure communication receivers require more efficient frequency converters. Frequency conversion and multiplication processes cannot take place without the existence of harmonics in the system and the inherent property of a nonlinear element is
Fifa, Ekaterini
core  

Electrical characterization of Ag/p-GaSe:Gd schottky barrier diodes

, 2010
Some parameters of Ag/p-GaSe:Gd Schottky barrier diodes have been investigated by means of current-voltage and capacitance-voltage measurements at room temperature.
Dogan, S., Gurbulak, Bekir, Duman, S., Tekle, T. Bahtiyari   +3 more
core   +1 more source

Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer

Advanced Electronic Materials, Volume 11, Issue 6, May 2025.
A versatile strategy is reported for fabricating multi‐dimensional heterojunctions with significantly improved charge transfer capability. By integrating Ag nanowires with a MoS2/ZnO heterojunction, a fourfold increase in surface photovoltage is achieved, reaching 200 mV under visible light illumination.
Anh Thi Nguyen, Jungyoon Cho, Malkeshkumar Patel, Duc Anh Vu, Jungeun Song, Dongseok Suh, Ambrose Seo, Joondong Kim, Dong‐Wook Kim   +8 more
wiley   +1 more source

Graphene-Silicon Schottky Diodes

, 2016
We have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. The resulting current–voltage characteristics exhibit rectifying diode behavior with a barrier energy of 0.41 eV on n-type ...
Stephen B. Cronin (1467643), Mehmet Aykol (1809052), A. F. J. Levi (2201497), Chun-Chung Chen (1587412), Chia-Chi Chang (1949149)   +4 more
core   +1 more source

Atomically Modulating Competing Exchange Interactions in Centrosymmetric Skyrmion Hosts GdRu2X2 (X = Si and Ge)

Advanced Electronic Materials, EarlyView.
Our work bridges the gap between skyrmion discovery and material design by demonstrating how atomic‐scale control of exchange interactions enables tunable skyrmion phase transitions in centrosymmetric magnetic metals. ABSTRACT Magnetic skyrmions are topologically protected spin states that hold promise for shaping the future of electronics.
Dasuni N. Rathnaweera, Xudong Huai, K. Ramesh Kumar, Michał J. Winiarski, Tomasz Klimczuk, Allana G. Iwanicki, Satya K. Kushwaha, Martin Mourigal, Tyrel M. McQueen, Thao T. Tran   +9 more
wiley   +1 more source

Vapor‐Phase Grain‐Boundary Anchoring Enables Molecular Toughening and Record Bending Endurance in Pilot‐Scale Roll‐to‐Roll‐Printed Flexible Perovskite Modules

Angewandte Chemie, EarlyView.
A vapor‐phase molecular toughening strategy is developed for pilot‐scale roll‐to‐roll (R2R) ‐compatible fabrication of flexible perovskite solar modules. Thiol vapor selectively regulates crystallization and anchors at grain boundaries, reducing defects while enhancing mechanical resilience.
Lirong Dong, Viktor Rehm, Shudi Qiu, Zexian Han, Naveen Harindu Hemasiri, Michael Wurmshuber, Michael Wagner, Cindy‐Ly Tavera‐Méndez, Dorothea Wisser, Chaohui Li, Robin Basu, Leopold Lahn, Olga Kasian, Sarmad Feroze, Wolfgang Heiss, Andreas Distler, Hans‐Joachim Egelhaaf, Fu Yang, Christoph J. Brabec   +18 more
wiley   +2 more sources

Hydrogen sensors based on AlGaN/AIN/GaN Schottky diodes

, 2008
Pt/AlGaN/AIN/GaN Schottky diodes are fabricated and characterized for hydrogen sensing. The Pt Schottky contact and the Ti/Al/Ni/Au ohmic contact are formed by evaporation. Both the forward and reverse currents of the device increase greatly when exposed
Wang, XH, Wang, JX, Wang, XH, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: wxh@mail.semi.ac.cn, Ran, JX, Wang, CM, Wang, BZ, Xiao, HL, Wang, XL, Feng, C, Yang, CB   +9 more
core  

Photoresponse Properties of Ambipolar Transport in WSe2 Field‐Effect Transistors

Advanced Electronic Materials, EarlyView.
This study explores the photoresponse of WSe2 ambipolar field‐effect transistors, which exhibit unipolar, saturation, and ambipolar transport regions. Light illumination induces a shift of critical voltage with enhanced photocurrent generation driven by the photogating effect without the material degradation seen in avalanche photodetectors. This study
Jongeun Yoo, Seongmin Ko, Sunggyu Ryoo, Jaehyoung Park, Jaeyoung Kim, Juntae Jang, Jinwoo Sim, Donguk Kim, SeungNam Cha, Chongwu Zhou, Kyungjune Cho, Takhee Lee   +11 more
wiley   +1 more source