Results 101 to 110 of about 137,897 (277)
Advanced Science, EarlyView.A dual‐randomness hardware platform is demonstrated by integrating PUF and TRNG functionalities into mixed‐ZGO nanoclusters. By leveraging spatial and temporal stochasticity, the mixed‐ZGO NCs device enables both unique identification and random signal generation.
Seungme Kang +6 more
wiley +1 more source
Hydrogen sensors based on AlGaN/AIN/GaN Schottky diodes
, 2008 Pt/AlGaN/AIN/GaN Schottky diodes are fabricated and characterized for hydrogen sensing. The Pt Schottky contact and the Ti/Al/Ni/Au ohmic contact are formed by evaporation. Both the forward and reverse currents of the device increase greatly when exposed
Wang, XH +9 more
core
Electroluminescence from 4H-SiC Schottky Diodes
, 2000 We have observed electroluminescence from 4H-SiC Ni-Schottky diodes on 1015cm−3 nitrogen doped n-type epilayers. A high barrier Schottky contact will form an inversion layer close to it.
Q. ul-Wahab +3 more
core +1 more source
Advanced Science, EarlyView.GeSbSe selector‐only memory devices are investigated through physical and electrical analyses to reveal opposite trap‐state evolution pathways governing reliability degradation. Endurance cycling drives Se migration, transitioning traps from deep to shallow states.
Byung Jun Lee +3 more
wiley +1 more source
ESD Behavior of AlGaN/GaN Schottky Diodes
, 2019 This experimental study reports behavior of Ni/Au-based AlGaN/GaN Schottky diodes under ESD conditions. A comparative study of diodes with/without recessed Schottky contact unfolds different degradation physics in each case.
Shrivastava, Mayank +4 more
core +1 more source
Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer
Advanced Electronic Materials, Volume 11, Issue 6, May 2025.A versatile strategy is reported for fabricating multi‐dimensional heterojunctions with significantly improved charge transfer capability. By integrating Ag nanowires with a MoS2/ZnO heterojunction, a fourfold increase in surface photovoltage is achieved, reaching 200 mV under visible light illumination.
Anh Thi Nguyen +8 more
wiley +1 more source
Applied Physics Expressβ-Ga _2 O _3 power diodes were expected to possess low turn-on voltage ( V _on ), low reverse leakage ( J _R ), and high blocking capability for low power losses. In this work, a low V _on (0.48 V) β-Ga _2 O _3 heterojunction barrier Schottky diode (HJBS)
Qiuyan Li +7 more
doaj +1 more source
Ti Schottky barrier diodes on n-type 6H-SiC
, 2001 Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes (SBD) were fabricated. They showed good rectification characteristics from room temperature to 200degreesC. At low current density.
Liu ZL Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China. +5 more
core
Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses
Advanced Electronic Materials, EarlyView.A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj +3 more
wiley +1 more source
Graphene-Silicon Schottky Diodes
, 2016 We have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. The resulting current–voltage characteristics exhibit rectifying diode behavior with a barrier energy of 0.41 eV on n-type ...
Stephen B. Cronin (1467643) +4 more
core +1 more source