Results 101 to 110 of about 10,847 (275)
Investigation of significantly high barrier height in Cu/GaN Schottky diode
AIP Advances, 2016 Current-voltage (I-V) measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu) Schottky diodes fabricated on Gallium Nitride (GaN) epitaxial films.
Manjari Garg +4 more
doaj +1 more source
Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses
Advanced Electronic Materials, EarlyView.A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj +3 more
wiley +1 more source
npj Flexible ElectronicsDue to their inherent flexibility, solution-processable conjugated polymers are increasingly being considered for the cost-effective production of thin-film semiconductor devices used in Internet of Everything (IoE) applications.
Yongwoo Lee +3 more
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Ti Schottky barrier diodes on n-type 6H-SiC
, 2001 Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes (SBD) were fabricated. They showed good rectification characteristics from room temperature to 200degreesC. At low current density.
Liu ZL Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China. +5 more
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METALLIC POLYTHIOPHENE INORGANIC SEMICONDUCTOR SCHOTTKY DIODES
, 1993 An examination of the rectification properties of organic conductor/inorganic semiconductor/metal Schottky diodes has been made, in which freshly prepared polythiophene has been used as metal, and n-Si and n-GaAs as semiconductors.
KOLELI, F, TURUT, A
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Shot-noise suppression in Schottky barrier diodes [PDF]
, 2000 We give a theoretical interpretation of the noise properties of Schottky barrier diodes based on the role played by the long range Coulomb interaction.
Gomila Lluch, Gabriel +7 more
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Aging and Electrical Stability of DNTT Honey‐Gated OFETs
Advanced Electronic Materials, EarlyView.DNTT honey‐gated organic transistors were fabricated and evaluated to assess short‐ and long‐term stability under electrical stress and aging. Short‐term transfer measurements (five days, 40 sweeps/day) showed minimal parameter shift, while extended measurements revealed gradual degradation over weeks.
Douglas H. Vieira +8 more
wiley +1 more source
AIP Advances, 2016 Barium Hexaferrite (BaM) is an extensively studied magnetic material due to its potential device application. In this paper, we study Schottky junction diodes fabricated using gold and BaM and demonstrate the function of a spintronic device. Gold (50 nm)/
Jotinder Kaur +4 more
doaj +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Advances in Materials Science and Engineering, 2013 This paper presents a current transport mechanism of Pd metal-semiconductor-metal (MSM) GaAs diodes with a Schottky contact material formed by intentionally mixing SiO2 into a Pd metal.
Shih-Wei Tan, Shih-Wen Lai
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