Results 101 to 110 of about 10,859 (269)
Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer
Advanced Electronic Materials, Volume 11, Issue 6, May 2025.A versatile strategy is reported for fabricating multi‐dimensional heterojunctions with significantly improved charge transfer capability. By integrating Ag nanowires with a MoS2/ZnO heterojunction, a fourfold increase in surface photovoltage is achieved, reaching 200 mV under visible light illumination.
Anh Thi Nguyen +8 more
wiley +1 more source
Spintronic and plasmonic applications of electrodeposition on semiconductors [PDF]
, 2009 In this thesis, metal electrodeposition on semiconductor substrates is investigated. We show that electrodeposition of metals on n-type Si and Ge is an excellent method to create Schottky barriers and that this method has a number of unique advantages ...
Li, Xiaoli, Li, X.
core
Advanced Electronic Materials, EarlyView.Our work bridges the gap between skyrmion discovery and material design by demonstrating how atomic‐scale control of exchange interactions enables tunable skyrmion phase transitions in centrosymmetric magnetic metals. ABSTRACT Magnetic skyrmions are topologically protected spin states that hold promise for shaping the future of electronics.
Dasuni N. Rathnaweera +9 more
wiley +1 more source
Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes [PDF]
, 2003 Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes was studied. Ex-situ fabricated devices show a sensitivity towards molecular hydrogen, which is about 50 times higher than for in situ deposited diodes.
Eickhoff, M., +13 more
core +1 more source
npj Flexible ElectronicsDue to their inherent flexibility, solution-processable conjugated polymers are increasingly being considered for the cost-effective production of thin-film semiconductor devices used in Internet of Everything (IoE) applications.
Yongwoo Lee +3 more
doaj +1 more source
AIP Advances, 2016 Barium Hexaferrite (BaM) is an extensively studied magnetic material due to its potential device application. In this paper, we study Schottky junction diodes fabricated using gold and BaM and demonstrate the function of a spintronic device. Gold (50 nm)/
Jotinder Kaur +4 more
doaj +1 more source
Photoresponse Properties of Ambipolar Transport in WSe2 Field‐Effect Transistors
Advanced Electronic Materials, EarlyView.This study explores the photoresponse of WSe2 ambipolar field‐effect transistors, which exhibit unipolar, saturation, and ambipolar transport regions. Light illumination induces a shift of critical voltage with enhanced photocurrent generation driven by the photogating effect without the material degradation seen in avalanche photodetectors. This study
Jongeun Yoo +11 more
wiley +1 more source
Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses
Advanced Electronic Materials, EarlyView.A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj +3 more
wiley +1 more source
Shot-noise suppression in Schottky barrier diodes [PDF]
, 2000 We give a theoretical interpretation of the noise properties of Schottky barrier diodes based on the role played by the long range Coulomb interaction.
Gomila Lluch, Gabriel +7 more
core +1 more source
Micro and Nano Engineering, 2019 A comparative study of the electrical and photodetection properties of ZnO and Cr doped ZnO thin films are being reported here. The films were deposited using magnetron sputtering. X-ray diffraction (XRD) revealed hexagonal crystal structure of the films
S. Fareed +3 more
doaj +1 more source