Results 121 to 130 of about 137,897 (277)

A Dual‐Branch Flux‐Based Extended Memristor Model With Machine‐Learning‐Assisted Calibration

open access: yesAdvanced Electronic Materials, EarlyView.
Multilayer oxide memristors integrated in crossbar arrays are described through a dual‐branch, flux‐controlled compact model. A three‐stage calibration workflow combining Latin hypercube sampling, Bayesian optimization, and gradient‐based refinement extracts device parameters from experimental data.
Davide Rossetti   +6 more
wiley   +1 more source

Green‐Synthesized Bi‐Doped PEI N‐GQDs Enabling Long‐Term Stable Silicon Heterojunction Photodetectors

open access: yesAdvanced Electronic Materials, EarlyView.
Green‐engineered BiNPs&PEI N‐GQDs enable dual‐emission p‐Si Schottky photodetectors with strong photoresponse, long‐term stability, and a simple scalable fabrication strategy, offering a promising route for sustainable optoelectronic and photosensing applications.
Zeynep Berktaş   +6 more
wiley   +1 more source

Toward h-BN/GaN Schottky Diodes: Spectroscopic Study on the Electronic Phenomena at the Interface. [PDF]

open access: yesACS Appl Mater Interfaces, 2022
Zdanowicz E   +7 more
europepmc   +1 more source

Spectral characterisation of variable reactance devices [PDF]

open access: yes, 1987
Low Noise Figure communication receivers require more efficient frequency converters. Frequency conversion and multiplication processes cannot take place without the existence of harmonics in the system and the inherent property of a nonlinear element is
Fifa, Ekaterini
core  

Balancing Injection and Short‐Channel Effects in Organic Permeable Base Transistors via Thickness Scaling

open access: yesAdvanced Electronic Materials, EarlyView.
Organic permeable base transistors are shown to benefit from balanced control of the semiconductor layers above and below the permeable base. Simulations and experiments indicate that the top semiconductor layer affects charge injection and lateral transfer length, while the bottom layer modulates the collector‐induced short‐channel effects.
Sun‐Woo Jo   +4 more
wiley   +1 more source

60-700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes. [PDF]

open access: yesSensors (Basel), 2021
Pascu R   +7 more
europepmc   +1 more source

A Compact Resistively Loaded Metamaterial Absorber for 2.4 GHz RF Energy Harvesting With Impedance‐Matched Rectifier Analysis

open access: yesAdvanced Electronic Materials, EarlyView.
A compact resistively loaded metamaterial absorber captures RF energy at 2.4 GHz and directs most of the accepted power to modeled loads. The resonant response is confirmed experimentally for the fabricated absorber, while an impedance‐matched rectifier is evaluated through simulation. The stage‐wise results distinguish absorber, rectifier, and cascade
Md. Murad Kabir Nipun, Md. Jahedul Islam
wiley   +1 more source

Air-bridged Schottky diodes for dynamically tunable millimeter-wave metamaterial phase shifters. [PDF]

open access: yesSci Rep, 2021
Vassos E   +5 more
europepmc   +1 more source

GaP Schottky diodes for high temperature applications [PDF]

open access: yes, 1981
A need for high temperature electronic components has been established. In an effort to meet part of this need four metals have been evaluated for use in fabricating a Schottky barrier diode. Schottky diodes made from Pt, Cr, Al and Ni were aged for 1000
Coquat, J. A.   +2 more
core  

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