Results 121 to 130 of about 10,859 (269)
β-Ga _2 O _3 power diodes were expected to possess low turn-on voltage ( V _on ), low reverse leakage ( J _R ), and high blocking capability for low power losses. In this work, a low V _on (0.48 V) β-Ga _2 O _3 heterojunction barrier Schottky diode (HJBS)
Qiuyan Li +7 more
doaj +1 more source
A High-Power 170 GHz in-Phase Power-Combing Frequency Doubler Based on Schottky Diodes. [PDF]
Wang L, Zhang D, Meng J, Zhu H.
europepmc +1 more source
Key Challenges for Commercializing Perovskite–Silicon Tandem Solar Cells
This review discusses the scientific and technological challenges in advancing perovskite–silicon tandem solar cells (PSTSCs) from lab‐scale to commercial viability, focusing on long‐term stability, scalability, and economic feasibility. Key issues include intrinsic and extrinsic degradation factors, installation conditions, environmental impacts, and ...
Bilal Mehmood +16 more
wiley +1 more source
Nanocrystalline ZnSnN2 Prepared by Reactive Sputtering, Its Schottky Diodes and Heterojunction Solar Cells. [PDF]
Ye F +6 more
europepmc +1 more source
A visible‐light‐driven ambient photocatalytic method in‐situ fabricates Co/CoP‐x and Co/CoP@rGO heterojunction with enhanced charge separation, enabling highly efficient relayed electrocatalytic NOx− reduction to NH3 with outstanding Faraday efficiency and ammonia productivity.
Xin Zhao +7 more
wiley +1 more source
Characterization, modeling, and design for applications of waveguide impedance tuners and Schottky diodes at millimeter wavelengths [PDF]
This work contributes to two fields of research at millimeter wavelengths: waveguide impedance tuners and Schottky diodes. Three novel impedance tuning devices for frequencies between 75-220 GHz are presented and new modeling and characterization methods
Kiuru, Tero
core
Planar Schottky Microwave Diodes on 4H-SiC [PDF]
Planar microwave Schottky diodes on 4H-SiC have been designed, processed and measured. Different Schottky metals were tested to study the influence on the microwave performance.
Zirath, Herbert, +3 more
core +2 more sources
Radiofrequency Schottky Diodes Based on p-Doped Copper(I) Thiocyanate (CuSCN). [PDF]
Georgiadou DG +4 more
europepmc +1 more source
Optimized ITO back contact with pre‐Ga supply growth and Ag incorporation suppresses GaOx formation and interface recombination in bifacial CIGS solar cells. The devices achieve 17.25% front and 5.77% rear efficiency, delivering record bifacial power density up to 32.26 mW cm−2 in 4T perovskite/CIGS tandem architectures under enhanced albedo ...
Amanat Ali +13 more
wiley +1 more source
Single-Event Threats for Diodes - It's Not Just Schottky Diodes [PDF]
We present destructive single-event effects characterization of a variety of silicon Schottky diodes from different manufacturers.
Wilcox, Edward P. +4 more
core +1 more source

