Results 121 to 130 of about 137,897 (277)
A Dual‐Branch Flux‐Based Extended Memristor Model With Machine‐Learning‐Assisted Calibration
Multilayer oxide memristors integrated in crossbar arrays are described through a dual‐branch, flux‐controlled compact model. A three‐stage calibration workflow combining Latin hypercube sampling, Bayesian optimization, and gradient‐based refinement extracts device parameters from experimental data.
Davide Rossetti +6 more
wiley +1 more source
The Design of Terahertz Frequency Quadruplers Based on Discrete Schottky Diodes. [PDF]
Li Y, Zhang D, Meng J, Zhu H, Liu S.
europepmc +1 more source
Green‐engineered BiNPs&PEI N‐GQDs enable dual‐emission p‐Si Schottky photodetectors with strong photoresponse, long‐term stability, and a simple scalable fabrication strategy, offering a promising route for sustainable optoelectronic and photosensing applications.
Zeynep Berktaş +6 more
wiley +1 more source
Toward h-BN/GaN Schottky Diodes: Spectroscopic Study on the Electronic Phenomena at the Interface. [PDF]
Zdanowicz E +7 more
europepmc +1 more source
Spectral characterisation of variable reactance devices [PDF]
Low Noise Figure communication receivers require more efficient frequency converters. Frequency conversion and multiplication processes cannot take place without the existence of harmonics in the system and the inherent property of a nonlinear element is
Fifa, Ekaterini
core
Organic permeable base transistors are shown to benefit from balanced control of the semiconductor layers above and below the permeable base. Simulations and experiments indicate that the top semiconductor layer affects charge injection and lateral transfer length, while the bottom layer modulates the collector‐induced short‐channel effects.
Sun‐Woo Jo +4 more
wiley +1 more source
60-700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes. [PDF]
Pascu R +7 more
europepmc +1 more source
A compact resistively loaded metamaterial absorber captures RF energy at 2.4 GHz and directs most of the accepted power to modeled loads. The resonant response is confirmed experimentally for the fabricated absorber, while an impedance‐matched rectifier is evaluated through simulation. The stage‐wise results distinguish absorber, rectifier, and cascade
Md. Murad Kabir Nipun, Md. Jahedul Islam
wiley +1 more source
Air-bridged Schottky diodes for dynamically tunable millimeter-wave metamaterial phase shifters. [PDF]
Vassos E +5 more
europepmc +1 more source
GaP Schottky diodes for high temperature applications [PDF]
A need for high temperature electronic components has been established. In an effort to meet part of this need four metals have been evaluated for use in fabricating a Schottky barrier diode. Schottky diodes made from Pt, Cr, Al and Ni were aged for 1000
Coquat, J. A. +2 more
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