Results 141 to 150 of about 137,897 (277)

Low‐Dimensional Materials and Van Der Waals Heterostructures for Energy Application: A Comprehensive Review

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam, Sajjad Ali, Pir Muhammad Ismail, ABM Sharif Hossain   +3 more
wiley   +1 more source

Gas–Solid Interface‐Assisted Growth of Organic Semiconductor Single Crystals: Dimensions, Structures, Mechanisms, and Applications

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Gas–solid interface‐assisted growth strategies have unlocked precise control over crystal structure, morphology, dimension, and molecular packing. The obtained organic semiconductor single crystals represent the ideal candidates for high‐performance organic optoelectronic devices.
Tingyi Yan, Qing Tian, Jinwen Wang, Ke Jiang, Yage Han, Yuanzhuang Ren, Lingyun Li, Xiujuan Zhang, Jiansheng Jie   +8 more
wiley   +1 more source

Transparent and Photovoltaic Water–Semiconductor Interface for Ultra‐Low‐Light Omnidirectional Photodetection

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
A self‐powered photodetector using a static water–ZnO interface forms a Schottky‐like photovoltaic junction for ultra‐low‐light sensing. It delivers strong photoresponse, 360° detection, and flexibility, advancing transparent and sustainable water‐based optoelectronics.
Sanh Vo Thi, Malkeshkumar Patel, Sourov Hossain, Md Arifur Rahman Barno, Ngoc Le Trinh, Han‐Bo‐Ram Lee, Yu Kwon Kim, Joondong Kim   +7 more
wiley   +1 more source

The impact of formation modes of platinum silicide by the quick heat treatment on Schottky diodes parameters

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019
The results of studying of the impact of formation modes of platinum silicide using qiuck heat treatment on electrophysical parameters of Schottky diodes are presented.
V. A. Saladukha, V. A. Pilipenko, V. A. Gorushko, V. A. Philipenya   +3 more
doaj  

Recent Progress of Metal Halide Perovskite‐Based S‐Scheme Heterojunction for Solar Energy Conversion

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Recent advances in metal halide perovskite‐based S‐scheme photocatalytic heterojunctions are systematically reviewed in this work. Synthetic protocols, state‐of‐the‐art characterizations for tracking interfacial charge transfer, and their diverse photocatalytic applications are thoroughly explored.
Xinhe Wu, Shujie Yin, Jiachao Xu, Lihong Tan, Guohong Wang   +4 more
wiley   +1 more source

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors. [PDF]

Micromachines (Basel), 2020
Sandupatla A, Arulkumaran S, Ing NG, Nitta S, Kennedy J, Amano H.   +5 more
europepmc   +1 more source

ZnO Nanowires by Chemical Bath Deposition: A Review on Doping and Functional Devices

Electron, EarlyView.
This review reports the most recent and well‐established state‐of‐the‐art and scientific challenges related to the doping of ZnO nanowires by chemical bath deposition, encompassing native point and hydrogen‐related defects, as well as extrinsic dopants.
Clément Lausecker, Adrien Baillard, Estelle Appert, Vincent Consonni   +3 more
wiley   +1 more source

Light‐Modulated Exchange Bias in Multiferroic Heterostructures

Electron, EarlyView.
In this article, exchange bias and magnetization are modulated with visible light at room temperature in PMN‐PZT/FeGa/IrMn multiferroic heterostructures. Photostrictive effect is the main mechanism leading to the modulation of magnetic anisotropy and interfacial exchange bias coupling between the ferromagnetic and antiferromagnetic layers.
Huan Tan, Zheng Ma, Cynthia Bou Karroum, Matthieu Liparo, Jean‐Philippe Jay, David Spenato, David T. Dekadjevi, Luís Martínez Armesto, Alberto Quintana, Jordi Sort   +9 more
wiley   +1 more source

160 GHz Schottky Diodes from Solution-Processed IGZO. [PDF]

Small
Panagiotidis L, Faber H, Yu Y, Doukas S, Luo L, Ghadiyali M, Harrison GT, Naphade D, Mandal S, Alghamdi WS, Mazo-Mantilla HF, Maksudov T, Pappas GS, Schwingenschlögl U, Fatayer S, Lidorikis E, Shamim A, Anthopoulos TD.   +17 more
europepmc   +1 more source

The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors. [PDF]

Sci Rep, 2020
Besendörfer S, Meissner E, Medjdoub F, Derluyn J, Friedrich J, Erlbacher T.   +5 more
europepmc   +1 more source