Results 141 to 150 of about 10,847 (275)

Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles

Nanoscale Research Letters, 2011
Depositions on surfaces of semiconductor wafers of InP and GaN were performed from isooctane colloid solutions of palladium (Pd) nanoparticles (NPs) in AOT reverse micelles.
Zdansky Karel
doaj  

Light‐Modulated Exchange Bias in Multiferroic Heterostructures

Electron, EarlyView.
In this article, exchange bias and magnetization are modulated with visible light at room temperature in PMN‐PZT/FeGa/IrMn multiferroic heterostructures. Photostrictive effect is the main mechanism leading to the modulation of magnetic anisotropy and interfacial exchange bias coupling between the ferromagnetic and antiferromagnetic layers.
Huan Tan, Zheng Ma, Cynthia Bou Karroum, Matthieu Liparo, Jean‐Philippe Jay, David Spenato, David T. Dekadjevi, Luís Martínez Armesto, Alberto Quintana, Jordi Sort   +9 more
wiley   +1 more source

Quasi‐digital memristor with self‐rectifying and synaptic functions in crossbar array architectures

FlexMat, EarlyView.
The text should be different from the abstract text. A self‐rectifying quasi‐digital memristor (QDM) featuring a well‐defined p‐AgI/n‐PbI2 heterojunction is developed. It monolithically integrate diode‐like rectification, digital switching, and analog plasticity.
Tianyu Liu, Qingqing Wang, Qiuyu Liu, Jinze Li, Zhongjing Xia, Hongcheng Yang, Zilong Mao, Siyu Gou, Zhe Li, Chao Zhu, Xuefen Song, Lin Wang   +11 more
wiley   +1 more source

Molecular beam epitaxial In2Te3 electronic devices

NPG Asia Materials
We report on the electrical characteristics of field-effect transistors (FETs) and Schottky diodes based on In2Te3 grown on hexagonal boron nitride (h-BN) substrates utilizing molecular beam epitaxy (MBE).
Imhwan Kim, Jinseok Ryu, Eunsu Lee, Sangmin Lee, Seokje Lee, Wonwoo Suh, Jamin Lee, Miyoung Kim, Hong seok Oh, Gyu-Chul Yi   +9 more
doaj   +1 more source

Parallel and interleaved structures for diamond Schottky diodes

, 2017
International audienceIn the recent years, diamond Schottky diodes with high Figures of Merit have been demonstrated. Static and dynamic characteristics of diamond Schottky diodes are presented in this paper.
Lefranc, Pierre, Perez, Gaëtan, Rouger, Nicolas, Clément, Jean-Paul, Jeannin, Pierre-Olivier, Eon, David   +4 more
core   +1 more source

Borophene‐based sensing platforms: Pioneering ultrasensitive detection

FlexMat, EarlyView.
Schematic Diagram of Performance Optimization Strategies and Sensing Application Characteristics of Two‐Dimensional Boron‐Based Materials in Novel Sensors. Abstract Borophene is an emerging two‐dimensional (2D) material. Since significant breakthroughs were achieved in the experimental synthesis of borophene, the exploration and development of ...
Chi Yuan, Yanpeng Ji, Yi Liu, Guoan Tai
wiley   +1 more source

Impact of Nickel Diffusion on Leakage Current Degradation in β‐Ga2O3 Schottky Barrier Diodes

Information &Functional Materials, EarlyView.
The diffusion of Ni atoms during Schottky electrode fabrication induces localized stress defects in β‐Ga₂O₃ substrates, which act as primary reverse leakage pathways in SBDs. Elucidating this mechanism provides critical guidance for optimizing electrode composition in high‐performance β‐Ga₂O₃ electronics.
Ziyi Wang, Zhu Jin, Defan Wu, Xiliang Luo, Zhongyi Lin, Yingying Liu, Ning Xia, Cheng Li, Hui Zhang, Deren Yang   +9 more
wiley   +1 more source

Wide‐Bandgap Semiconductor‐Based Neuromorphic Computing

Information &Functional Materials, EarlyView.
Wide‐bandgap semiconductors enable robust, low‐power neuromorphic devices for extreme environments. This review outlines material advantages, device physics, integration, and future directions for next‐generation brain‐inspired computing. ABSTRACT Neuromorphic computing has emerged as a promising paradigm to overcome the energy inefficiency and data ...
Hongyu Tang, Pengsheng Min, Yang Zhang, Qingchun Zhang, Wanlu Zhang, Ruiqian Guo, Guoqi Zhang   +6 more
wiley   +1 more source

4H-SiC Schottky diodes with high on/off current ratio

, 2001
4H-SiC Schottky diodes having a main titanium contact surrounded by a narrow ring-shaped nickel contact have been fabricated. The diodes display low reverse leakage currents, corresponding to those observed in nickel Schottky contacts, and low forward ...
Wright NG, O'Neill AG, Johnson CM, Horsfall AB, Vassilevski KV   +4 more
core  

PtTe2 interface engineering for enhanced near‐infrared photoresponse in black silicon photodetectors

InfoMat, EarlyView.
Highly responsive near‐infrared (NIR) photodetectors are essential for advanced photoelectric systems. In this work, a high‐responsivity NIR photodetector is developed by integrating a PtTe2/black silicon (B‐Si) heterostructure into a Si p‐i‐n diode, where B‐Si introduces sub‐bandgap defect states to enhance NIR absorption and the PtTe2 layer induces ...
Guanyu Mi, Changbin Nie, Jintao Fu, Zeyu An, Xingzhan Wei, Weiyi Sun, Xilong Jiang, Jun Liu, Daqian Guo, Xueming Fan, Longcheng Que, Jian Lv, Jiang Wu   +12 more
wiley   +1 more source