Results 161 to 170 of about 10,847 (275)

The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors. [PDF]

Sci Rep, 2020
Besendörfer S, Meissner E, Medjdoub F, Derluyn J, Friedrich J, Erlbacher T.   +5 more
europepmc   +1 more source

Simulation Insights Into Enhanced Emitter Contact Passivation via LECO on Industrial TOPCon Solar Cells

Progress in Photovoltaics: Research and Applications, EarlyView.
Numerical simulations were employed to boost industrial TOPCon cells from 25.5% to 26.07% by suppressing J0e,metal,eff without compromising ρc with a dual optimization strategy: (1) engineering the selective emitter sheet resistance (Rsh_SE) to 117 Ω/□ and (2) reducing the LECO‐induced partial metal contact ratio (fpmc) to 1%.
Jiayu Xu, Yun Qin, Zhiyuan Zhang, Wei Fan, Wu Zhang, Qun Liu, Jiaji Lin, Yuhao Cheng, Ning Song, Bram Hoex, Lang Zhou, Fa‐Jun Ma   +11 more
wiley   +1 more source

Silicon Nanowire-Based Schottky Diodes for Enhanced Temperature Sensing and Extended Operable Range. [PDF]

Sensors (Basel)
Pristavu G, Pascu R, Popescu M, Simion M, Romanitan C, Mihalache I, Draghici F, Brezeanu G.   +7 more
europepmc   +1 more source

Ultrafast 27 GHz cutoff frequency in vertical WSe₂ Schottky diodes with extremely low contact resistance. [PDF]

Nat Commun, 2020
Yang SJ, Park KT, Im J, Hong S, Lee Y, Min BW, Kim K, Im S.   +7 more
europepmc   +1 more source

Diodes Schottky diamant fonctionnant à 200°C

, 2016
International audienceLes caractéristiques courant-tension jusqu'à 200 °C de diodes Schottky diamant verticales et pseudo-verticales réalisées dans le cadre du projet DIAMONIX2 sont présentées dans cet article.
Servel, Alexandra, Cazarré, Alain, Achard, Jocelyn, Monflier, Richard, Valdivia Birnbaum, Maria José, Eon, David, Isoird, Karine, Tasselli, Josiane   +7 more
core  

Wet‐Transferred MoS2 on Passivated InP: A Van der Waals Heterostructure for Advanced Optoelectronic Applications

physica status solidi (RRL) – Rapid Research Letters, Volume 19, Issue 5, May 2025.
This study presents a photodetector based on atomically thin MoS2 on an InP substrate, forming an n‐MoS2/p‐InP type‐II staggered heterojunction. The device exhibits excellent rectifying properties with an ideality factor of 1.57 and achieves a peak photoresponsivity of 960 mA W−1, while MoS2 provides stable passivation for InP. III–V semiconductors are
Dong Hwi Choi, Jae Hyeop Lee, Min Su Kim, Jaeseo Park, Jun Oh Kim, Teli Aviraj Mahadev, Beknalkar Sonali Ajay, Hong Hyuk Kim, Jae Cheol Shin   +8 more
wiley   +1 more source

Sustainable Manufacturing of Fully Printed Zn/ZnO/CNT Schottky Diodes on Kraft Paper. [PDF]

ACS Appl Electron Mater
Bertoldo LHT, Ozório M, Vieira DH, Morais RM, Rollo A, Kettle J, Alves N.   +6 more
europepmc   +1 more source

Hydrogen Sensing Performance of ZnO Schottky Diodes in Humid Ambient Conditions with PMMA Membrane Layer. [PDF]

Sensors (Basel), 2020
Jang S, Jung S, Baik KH.
europepmc   +1 more source

Interface Engineering of Chemical Vapor‐Deposited 2D MoSe2

physica status solidi (RRL) – Rapid Research Letters, EarlyView.
Fluorine exposure and nitrogen ion implantation are employed as interface engineering strategies to modulate the near‐surface electronic structure of chemical vapor deposition‐grown MoSe2. Spectroscopic analysis reveals that fluorination induces mild lattice modifications and p‐type doping, while nitrogen implantation introduces defects and n‐type ...
Guilherme Araújo, Valerio C. A. Ficca, Vicente Lopes, Ernesto Placidi, Andrea Capasso   +4 more
wiley   +1 more source

Wafer-scale radio frequency ZnO Schottky diodes and arithmetic circuits. [PDF]

Sci Rep
Mazo-Mantilla HF, Bizak Z, Luo L, Faber H, Florica C, Mandal S, Shamim A, Salama KN, Anthopoulos TD.   +8 more
europepmc   +1 more source