Exploring Charge Transport Mechanisms and Dielectric Spectroscopy in Terp-Fc Layers Schottky Diodes under Temperature Variations. [PDF]
ACS OmegaOruç P +3 more
europepmc +1 more source
Advanced Functional Materials, Volume 36, Issue 44, 1 June 2026.A cross‐layer passivation strategy employing molecularly designed thiazol‐5‐ylmethanamine hydrochloride (TMACl) enables coherent defect regulation at the SnO2/perovskite interface, stabilizes both layers, promotes phase‐pure α‐FAPbI3 formation, and enhances charge extraction, delivering PCEs of 26.44% in rigid and 24.72% in flexible perovskite solar ...
Fan Shen +16 more
wiley +1 more source
Trench MOS Schottky Diodes: A Physics-Based Analytical Model Approach to Charge Sharing. [PDF]
Micromachines (Basel)Quddus MT +3 more
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Al₂O₃-Based a-IGZO Schottky Diodes for Temperature Sensing. [PDF]
Sensors (Basel), 2019 Guo Q +5 more
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The Effect of Transient Ionizing Radiation upon Schottky Barrier Diodes
, 1968 The theory of operation of the Schottky barrier diode was reviewed. The complications caused by a more accurate space charge formulation were discussed.
Schnurr, Robert H.
core
Impact of Oxygen Plasma Pre‐Treatment on Thermal Oxidation and Reliability of SiO2 on 4H‐SiC
Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.We investigate how oxygen plasma pre‐treatment affects the thermal oxidation of silicon carbide. While plasma modification increases growth rates by 84%, it reduces dielectric breakdown strength by 18%. Our findings reveal that although plasma improves the interface state density, it introduces structural damage, highlighting a critical trade‐off ...
Chezhiyan Nanjappan +3 more
wiley +1 more source
"Nano-In-Nano" Schottky Diodes Fabricated by Combining Self-Aligned Nanogap Patterning with Bottom-Up ZnO Nanowire Growth. [PDF]
ACS Appl Electron MaterAhmed UF, Wyatt-Moon GS, Flewitt AJ.
europepmc +1 more source
Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.In this research, a simple and scalable strategy for protection of a few‐layer black phosphorus (FLBP) with a cellulose nitrate‐based material is presented. The FLBP is structurally and morphologically characterized. The FLBP stability with and without nitrocellulose protection is monitored by interferometric method, surface profile examination, and ...
Paweł Jakóbczyk +8 more
wiley +1 more source
Impact of Surface States in Graphene/p-Si Schottky Diodes. [PDF]
Materials (Basel)Maccagnani P, Pieruccini M.
europepmc +1 more source
Schottky Barrier Engineering in n‐Type Organic Source‐Gated Transistors Enabling High Conductance
Advanced Materials Technologies, Volume 11, Issue 11, 5 June 2026.This study introduces a modified source electrode architecture for n‐type organic source‐gated transistors (OSGTs). By integrating Schottky and Ohmic contact regions, the design achieves a thinner depletion envelope, enhancing mobility nearly tenfold and reducing threshold voltage.
Yonghee Kim +4 more
wiley +1 more source