Results 171 to 180 of about 137,897 (277)
4H-SiC Schottky diodes with high on/off current ratio
, 2001 4H-SiC Schottky diodes having a main titanium contact surrounded by a narrow ring-shaped nickel contact have been fabricated. The diodes display low reverse leakage currents, corresponding to those observed in nickel Schottky contacts, and low forward ...
Wright NG +4 more
core
InfoMat, EarlyView.This review provides a comprehensive perspective on p‐doping in two‐dimensional transition metal dichalcogenides, linking the origins of carrier polarity, doping mechanisms, verification methodologies, and device‐level impacts. By establishing correlations among atomic‐scale doping, carrier modulation, and device functionality, it offers practical ...
Seo Yeon Han +4 more
wiley +1 more source
Trench MOS Schottky Diodes: A Physics-Based Analytical Model Approach to Charge Sharing. [PDF]
Micromachines (Basel)Quddus MT +3 more
europepmc +1 more source
Al₂O₃-Based a-IGZO Schottky Diodes for Temperature Sensing. [PDF]
Sensors (Basel), 2019 Guo Q +5 more
europepmc +1 more source
Impact of Surface States in Graphene/p-Si Schottky Diodes. [PDF]
Materials (Basel)Maccagnani P, Pieruccini M.
europepmc +1 more source
Impacts of Fermi Level Pinning at Hole‐Selective Contacts in CdSeTe/CdTe Solar Cells
Progress in Photovoltaics: Research and Applications, EarlyView.Experimental measurements and SCAPS simulations consistently demonstrate dark–light J–V non‐superposition in CdSeTe/CdTe solar cells. The results indicate that donor‐like interface states at the ZnTe/CdTe contact pin the Fermi level, thereby producing a parasitic built‐in voltage that accounts for the observed non‐superposition (take‐off) behavior ...
Ariful Islam +5 more
wiley +1 more source
"Nano-In-Nano" Schottky Diodes Fabricated by Combining Self-Aligned Nanogap Patterning with Bottom-Up ZnO Nanowire Growth. [PDF]
ACS Appl Electron MaterAhmed UF, Wyatt-Moon GS, Flewitt AJ.
europepmc +1 more source
physica status solidi (RRL) – Rapid Research Letters, Volume 19, Issue 5, May 2025.This study presents a photodetector based on atomically thin MoS2 on an InP substrate, forming an n‐MoS2/p‐InP type‐II staggered heterojunction. The device exhibits excellent rectifying properties with an ideality factor of 1.57 and achieves a peak photoresponsivity of 960 mA W−1, while MoS2 provides stable passivation for InP. III–V semiconductors are
Dong Hwi Choi +8 more
wiley +1 more source
Responsive Materials, EarlyView.Environmental pollution and water scarcity demand innovative purification methods. This study presents a sol‐gel approach to fabricate mixed silica–titania thin films joining photocatalytic activity with selective sorption capability. The films exhibit higher surface area, enhanced degradation of cationic and improved performance over bare titania ...
Andrea Lanfranchi +13 more
wiley +1 more source
Small, EarlyView.Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong +9 more
wiley +1 more source