Results 151 to 160 of about 10,847 (275)

Deuteration‐functionalized self‐assembled monolayers for UV‐durable perovskite solar cells

open access: yesInfoMat, EarlyView.
Modification with deuterophenyl groups has been demonstrated to be an effective strategy for the construction of SAMs. The impressive PCE of 26.34% is by far one of the highest values for PSCs with the carbazole‐based SAMs as HTLs. This UV resistance performance represents the highest level of performance reported to date for PSCs using SAMs as HTLs ...
Desheng Li   +13 more
wiley   +1 more source

Composition pinning growth for efficient and stable all‐inorganic Pb‐Sn perovskite solar cells

open access: yesInfoMat, EarlyView.
All‐inorganic Pb‐Sn perovskite solar cells are promising for low‐bandgap photovoltaics, but uneven Pb/Sn composition during film growth can create defects and reduce performance. In this study, composition pinning growth was used to hold the Pb/Sn ratio steady during CsPb0.5Sn0.5I3 crystallization, producing more uniform films and higher‐performing ...
Jin Kyoung Park   +6 more
wiley   +1 more source

Planar Schottky Microwave Diodes on 4H-SiC

open access: yes, 2005
Planar microwave Schottky diodes on 4H-SiC have been designed, processed and measured. Different Schottky metals were tested to study the influence on the microwave performance.
Zirath, Herbert,   +3 more
core   +1 more source

Single-Event Threats for Diodes - It's Not Just Schottky Diodes

open access: yes, 2017
We present destructive single-event effects characterization of a variety of silicon Schottky diodes from different manufacturers.
Wilcox, Edward P.   +4 more
core  

Diamond Schottky barrier diodes

open access: yes, 2010
Research on wide band gap semiconductors suitable for power electronic devices has spread rapidly in the last decade. The remarkable results exhibited by silicon carbide (SiC) Schottky batTier diodes (SBDs), commercially available since 2001, showed the potential of wide band gap semiconductors for replacing silicon (Si) in the range of medium to high ...
openaire   +1 more source

Germanium‐Based Mid‐Infrared Integrated Photonics

open access: yesLaser &Photonics Reviews, EarlyView.
The mid‐infrared (mid‐IR) spectral range is a part of the electromagnetic spectrum in which most of the molecules have vibrational and rotational resonances. Photonics integration in this wavelength range have thus seen a burst of interest in the recent years, mainly driven by applications related with the detection of chemical and biological ...
Delphine Marris‐Morini   +6 more
wiley   +1 more source

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors. [PDF]

open access: yesMicromachines (Basel), 2020
Sandupatla A   +5 more
europepmc   +1 more source

MXenes in Next‐Generation Light‐Emitting Diodes: Innovations, Challenges, and Future Prospects

open access: yesLaser &Photonics Reviews, EarlyView.
This review provides a systematic and critical overview of MXene integration in LEDs from their synthesis strategies and electronic characteristics to their roles as electrodes, interlayers, and emissive materials. It also explores the emerging prospects and challenges for MXene‐enabled flexible, transparent, and intelligent display technologies that ...
Awais Ali   +9 more
wiley   +1 more source

The impact of formation modes of platinum silicide by the quick heat treatment on Schottky diodes parameters

open access: yesДоклады Белорусского государственного университета информатики и радиоэлектроники, 2019
The results of studying of the impact of formation modes of platinum silicide using qiuck heat treatment on electrophysical parameters of Schottky diodes are presented.
V. A. Saladukha   +3 more
doaj  

160 GHz Schottky Diodes from Solution-Processed IGZO. [PDF]

open access: yesSmall
Panagiotidis L   +17 more
europepmc   +1 more source

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