Results 151 to 160 of about 137,897 (277)

Reconfigurable Logic Operation of MoTe2 Homojunction Enabled by Staggered Double‐Sided Contacts

Electron, EarlyView.
A gap adjacent to an electrode in the MoTe2 SDC transistor enables polarity reconfiguration, switching between p‐type and n‐type depending on bias polarity. This reconfiguration is ensured when the absolute bias voltage is less than the gate voltage, yielding a near‐ideal subthreshold swing of 67.6 mV/dec and on/off ratios of 104–106.
Jun‐Qiang Zhang, Jia‐Yi Zhang, Jiong‐Tao Zhang, Xu Zeng, Yuntian Wu, Lili He, Xiangyu Hou, Xiaoguang Luo   +7 more
wiley   +1 more source

4H-SiC Schottky diodes with high on/off current ratio

, 2002
4H-SiC Schottky diodes having a main titanium contact surrounded by a narrow ring-shaped nickel contact have been fabricated. The diodes display low reverse leakage currents, corresponding to those observed in nickel Schottky contacts, and low forward ...
Wright NG, O'Neill AG, Johnson CM, Horsfall AB, Vassilevski KV   +4 more
core   +1 more source

Silicon Nanowire-Based Schottky Diodes for Enhanced Temperature Sensing and Extended Operable Range. [PDF]

Sensors (Basel)
Pristavu G, Pascu R, Popescu M, Simion M, Romanitan C, Mihalache I, Draghici F, Brezeanu G.   +7 more
europepmc   +1 more source

Ultrafast 27 GHz cutoff frequency in vertical WSe₂ Schottky diodes with extremely low contact resistance. [PDF]

Nat Commun, 2020
Yang SJ, Park KT, Im J, Hong S, Lee Y, Min BW, Kim K, Im S.   +7 more
europepmc   +1 more source

Borophene‐based sensing platforms: Pioneering ultrasensitive detection

FlexMat, EarlyView.
Schematic Diagram of Performance Optimization Strategies and Sensing Application Characteristics of Two‐Dimensional Boron‐Based Materials in Novel Sensors. Abstract Borophene is an emerging two‐dimensional (2D) material. Since significant breakthroughs were achieved in the experimental synthesis of borophene, the exploration and development of ...
Chi Yuan, Yanpeng Ji, Yi Liu, Guoan Tai
wiley   +1 more source

Sustainable Manufacturing of Fully Printed Zn/ZnO/CNT Schottky Diodes on Kraft Paper. [PDF]

ACS Appl Electron Mater
Bertoldo LHT, Ozório M, Vieira DH, Morais RM, Rollo A, Kettle J, Alves N.   +6 more
europepmc   +1 more source

Hydrogen Sensing Performance of ZnO Schottky Diodes in Humid Ambient Conditions with PMMA Membrane Layer. [PDF]

Sensors (Basel), 2020
Jang S, Jung S, Baik KH.
europepmc   +1 more source

PbS colloidal quantum dots imagers: From single devices to arrays, flexible platforms, and CMOS‐integrated systems

FlexMat, EarlyView.
Abstract Imagers operating in the visible to near‐infrared (NIR) range play an important role in applications such as industrial sorting, security surveillance, and autonomous driving. However, conventional imaging technologies based on silicon and III–V semiconductors suffer from several limits, including restricted spectral range, high fabrication ...
Xin Hong, Songdi Zhang, Runtian Han, Peng Wang, Wenjie Deng   +4 more
wiley   +1 more source

Wafer-scale radio frequency ZnO Schottky diodes and arithmetic circuits. [PDF]

Sci Rep
Mazo-Mantilla HF, Bizak Z, Luo L, Faber H, Florica C, Mandal S, Shamim A, Salama KN, Anthopoulos TD.   +8 more
europepmc   +1 more source

A Comparative Study of Silicon Carbide Merged PiN Schottky Diodes with Electrical-Thermal Coupled Considerations. [PDF]

Materials (Basel), 2020
Wu J, Ren N, Guo Q, Sheng K.
europepmc   +1 more source