Results 201 to 210 of about 10,859 (269)

Hafnium-Based Ferroelectric Diodes for Logic-in-Memory Application. [PDF]

Micromachines (Basel)
Han S, Zhang Y, Wang X, Tong P, Liu C, Zeng Q, Liu J, Huang X, Li Q, Cao R, Wang W.   +10 more
europepmc   +1 more source

Photoconductive Gain Behavior of Ni/β-Ga₂O₃ Schottky Barrier Diode-Based UV Detectors. [PDF]

Micromachines (Basel)
Kopyev VV, Yakovlev NN, Tsymbalov AV, Almaev DA, Kosmachev PV.   +4 more
europepmc   +1 more source

Mitigating Plasma Etch-Induced Negative Charge Trapping in 2.7 kV β‑Ga₂O₃ (001) Trench Schottky Barrier Diodes Using H₃PO₄ Treatment. [PDF]

ACS Appl Electron Mater
Kim MY, Bhat AK, Vanjari SC, Smith MD, Kuball M.   +4 more
europepmc   +1 more source

Imperfection in Semiconductors Leading to High Performance Devices. [PDF]

Adv Sci (Weinh)
Duboz JY, Siviero M, Lesourd L, Frayssinet E, Chenot S, Hofverberg P, Marafico S, Vidal M, Hugues M.   +8 more
europepmc   +1 more source

Highly Efficient Polarization-Insensitive Wide-Angle Orthogonal Dipole Metasurface for Ambient Energy Harvesting. [PDF]

Micromachines (Basel)
Wei Y, Gao Z, Li H, Li Z.
europepmc   +1 more source

Enabling state-of-the-art sensitivity of patch-antenna-coupled TeraFETs for the >1-THz frequency band using superstrate lenses

Holstein J, But DB, Krysl A, Lisauskas A, Roskos HG.   +4 more
europepmc   +1 more source

Scaling of nano-Schottky-diodes [PDF]

Applied Physics Letters, 2002
A generally applicable model is presented to describe the potential barrier shape in ultrasmall Schottky diodes. It is shown that for diodes smaller than a characteristic length lc (associated with the semiconductor doping level) the conventional ...
Teunis Klapwijk, Sven Rogge, Rogge S
exaly   +3 more sources

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Ferroelectric Schottky Diode

Physical Review Letters, 1994
A Schottky contact consisting of a semiconducting ferroelectric material and a high work function metal shows a bistable conduction characteristic. An on/off ratio of about 2 orders of magnitude was obtained in a structure consisting of a 0.2 \ensuremath{\mu}m ferroelectric PbTi${\mathrm{O}}_{3}$ film, a Au Schottky contact, and a ${\mathrm{La}}_{0.5}$$
, Blom, , Wolf, , Cillessen, , Krijn
openaire   +2 more sources

Single-Dislocation Schottky Diodes

Nano Letters, 2021
Dislocations often exhibit unique physical properties distinct from those of the bulk material. However, functional applications of dislocations are challenging due to difficulties in the construction of high-performance devices of dislocations. Here we demonstrate unidirectional single-dislocation Schottky diode arrays in a Fe2O3 thin film on Nb-doped
Ang Tao, Tingting Yao, Yixiao Jiang, Lixin Yang, Xuexi Yan, Hiromichi Ohta, Yuichi Ikuhara, Chunlin Chen, Hengqiang Ye, Xiuliang Ma   +9 more
openaire   +2 more sources

GaN Nanorod Schottky and p−n Junction Diodes [PDF]

Nano Letters, 2006
Conductive atomic force microscopy has been used to characterize single GaN nanorod Schottky and p-n junction diodes. The ideality factor, reverse breakdown voltage, and the Schottky barrier height of individual nanorod ...
Timothy Sands
exaly   +2 more sources