Results 211 to 220 of about 10,847 (275)

Hafnium-Based Ferroelectric Diodes for Logic-in-Memory Application. [PDF]

Micromachines (Basel)
Han S, Zhang Y, Wang X, Tong P, Liu C, Zeng Q, Liu J, Huang X, Li Q, Cao R, Wang W.   +10 more
europepmc   +1 more source

Thermionic emission conduction in Mo AlGaN/GaN diodes in the presence of Schottky barrier inhomogeneities. [PDF]

Sci Rep
Milazzo S, Greco G, Mirabella S, Iucolano F, Roccaforte F.   +4 more
europepmc   +1 more source

Photoconductive Gain Behavior of Ni/β-Ga₂O₃ Schottky Barrier Diode-Based UV Detectors. [PDF]

Micromachines (Basel)
Kopyev VV, Yakovlev NN, Tsymbalov AV, Almaev DA, Kosmachev PV.   +4 more
europepmc   +1 more source

Mitigating Plasma Etch-Induced Negative Charge Trapping in 2.7 kV β‑Ga₂O₃ (001) Trench Schottky Barrier Diodes Using H₃PO₄ Treatment. [PDF]

ACS Appl Electron Mater
Kim MY, Bhat AK, Vanjari SC, Smith MD, Kuball M.   +4 more
europepmc   +1 more source

Highly Efficient Polarization-Insensitive Wide-Angle Orthogonal Dipole Metasurface for Ambient Energy Harvesting. [PDF]

Micromachines (Basel)
Wei Y, Gao Z, Li H, Li Z.
europepmc   +1 more source

Imperfection in Semiconductors Leading to High Performance Devices. [PDF]

Adv Sci (Weinh)
Duboz JY, Siviero M, Lesourd L, Frayssinet E, Chenot S, Hofverberg P, Marafico S, Vidal M, Hugues M.   +8 more
europepmc   +1 more source

Recent Developments and Challenges of Edge Termination Techniques for Vertical Diamond Schottky Barrier Diodes. [PDF]

Sensors (Basel)
Li G, Lin W, Liu S, Aileplanm Y, Du A, Li L.   +5 more
europepmc   +1 more source

Enabling state-of-the-art sensitivity of patch-antenna-coupled TeraFETs for the >1-THz frequency band using superstrate lenses

Holstein J, But DB, Krysl A, Lisauskas A, Roskos HG.   +4 more
europepmc   +1 more source

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Carbon–Silicon Schottky Barrier Diodes

Small, 2012
The simple fabrication of high-performance Schottky barrier diodes between silicon and conductive carbon films (C-Films) is reported. By optimizing the interface, ideality factors as low as n = 1.22 for pyrolytic photoresist films (PPF) have been obtained.
Chanyoung Yim, Niall Mcevoy, Ehsan Rezvani   +2 more
exaly   +3 more sources

Single-Dislocation Schottky Diodes

Nano Letters, 2021
Dislocations often exhibit unique physical properties distinct from those of the bulk material. However, functional applications of dislocations are challenging due to difficulties in the construction of high-performance devices of dislocations. Here we demonstrate unidirectional single-dislocation Schottky diode arrays in a Fe2O3 thin film on Nb-doped
Ang Tao, Tingting Yao, Yixiao Jiang, Lixin Yang, Xuexi Yan, Hiromichi Ohta, Yuichi Ikuhara, Chunlin Chen, Hengqiang Ye, Xiuliang Ma   +9 more
openaire   +2 more sources