Results 221 to 230 of about 10,847 (275)
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Physical Review Letters, 1994
A Schottky contact consisting of a semiconducting ferroelectric material and a high work function metal shows a bistable conduction characteristic. An on/off ratio of about 2 orders of magnitude was obtained in a structure consisting of a 0.2 \ensuremath{\mu}m ferroelectric PbTi${\mathrm{O}}_{3}$ film, a Au Schottky contact, and a ${\mathrm{La}}_{0.5}$$
, Blom, , Wolf, , Cillessen, , Krijn
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A Schottky contact consisting of a semiconducting ferroelectric material and a high work function metal shows a bistable conduction characteristic. An on/off ratio of about 2 orders of magnitude was obtained in a structure consisting of a 0.2 \ensuremath{\mu}m ferroelectric PbTi${\mathrm{O}}_{3}$ film, a Au Schottky contact, and a ${\mathrm{La}}_{0.5}$$
, Blom, , Wolf, , Cillessen, , Krijn
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Journal of Nanoscience and Nanotechnology, 2021
We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a temperature range from 293 K to 573 K. The thermal sensitivity of the devices was calculated from the slope of the forward voltage versus temperature plot.
Seong-Ji, Min +3 more
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We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a temperature range from 293 K to 573 K. The thermal sensitivity of the devices was calculated from the slope of the forward voltage versus temperature plot.
Seong-Ji, Min +3 more
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Molecules that mimic Schottky diodes
Physical Chemistry Chemical Physics, 2006Self-assembled monolayers of cationic donor-(pi-bridge)-acceptor dyes coupled with anionic donors exhibit asymmetric current-voltage (I-V) characteristics when contacted by Au or PtIr probes. Rectification ratios of 3000 at +/- 1 V are obtained from Au-S-C10H20-A+-pi-D|D-|Au structures in which the cationic moiety is 5-(4-dimethylaminobenzylidene)-5,6 ...
Geoffrey J, Ashwell +2 more
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IEEE Transactions on Microwave Theory and Techniques, 1977
The super-Schottky-barrier diode, a superconductor-semiconductor tunneling junction, has been established as the most sensitive detector of microwaves. These record sensitivities were obtained in both the video and mixing modes of operation. Measurements at X-band have yielded a video NEP of 5 x 10/sup -16/ W/Hz/sup 1/2/ and a mixer input noise ...
F.L. Vernon +5 more
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The super-Schottky-barrier diode, a superconductor-semiconductor tunneling junction, has been established as the most sensitive detector of microwaves. These record sensitivities were obtained in both the video and mixing modes of operation. Measurements at X-band have yielded a video NEP of 5 x 10/sup -16/ W/Hz/sup 1/2/ and a mixer input noise ...
F.L. Vernon +5 more
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A novel InGaAs Schottky-2DEG diode
1993 (5th) International Conference on Indium Phosphide and Related Materials, 2002The preparation and properties of planar pseudomorphic InGaAs Schottky two-dimensional electron gas (2DEG) diodes are described. Single- and double-barrier diodes were prepared on metal-organic vapor phase epitaxial (MOVPE) grown modulation doped FET (MODFET)-like structures.
MARSO, Michel +5 more
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Capacitance of cadmium telluride Schottky diodes
Physica Status Solidi (a), 1978The ac small signal capacitance of Schottky structures obtained on undoped (106 Ωcm) and chlorine compensated (108Ωcm) p-type CdTe as well as on low resistivity (300 to 1000 Ωcm) n-type material is analyzed. For the lower resistivity p- and n-type samples, deviations from the expected behaviour are observed, which are explained in terms of a model ...
Rabin, B., Tabatabai, H., Siffert, P.
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Ideal Schottky diodes on passivated silicon
Physical Review Letters, 1992Because of the complicated electronic and metallurgical properties of the metal-semiconductor interface, there is much controversy about the theoretical interpretation of experimental results on Schottky barrier heights. We present a new approch of barrier height measurements on a prototypical clean, abrupt and noninteracting system consisting of ...
, Wittmer, , Freeouf
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1998
A Schottky barrier diode consists of a rectifying metal-semiconductor contact with a N-drift region, designed to support the required reverse voltage as shown in Fig. 3.1. Forward conduction in the Schottky diode occurs by the transport of majority carriers (electrons) across the metal-semiconductor barrier Baliga, 1996.
Ranbir Singh, B. Jayant Baliga
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A Schottky barrier diode consists of a rectifying metal-semiconductor contact with a N-drift region, designed to support the required reverse voltage as shown in Fig. 3.1. Forward conduction in the Schottky diode occurs by the transport of majority carriers (electrons) across the metal-semiconductor barrier Baliga, 1996.
Ranbir Singh, B. Jayant Baliga
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Metallization of power Schottky diodes
Vacuum, 1990Abstract A study involving the choice of basic materials, the structure of the Schottky diodes and the results of surface preparation before metallization with the barrier metals Cr and W in connection with the TiNiAu metallization system is presented.
A Pintar, J Razinger
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Journal of Physics E: Scientific Instruments, 1972
The experiment described was performed by an undergraduate in his final term at the University. A Schottky diode prepared by the evaporation of Au on to n type GaAs was used to measure the donor density profile in the semiconductor and to demonstrate the effects of deeper levels.
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The experiment described was performed by an undergraduate in his final term at the University. A Schottky diode prepared by the evaporation of Au on to n type GaAs was used to measure the donor density profile in the semiconductor and to demonstrate the effects of deeper levels.
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