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Edge effects in Schottky diodes
Solid-State Electronics, 1990Abstract The current-voltage ( I − V ) characteristics of unguarded Schottky diodes are investigated by applying the tunneling theory of Stratton to the non-parabolic barrier at the diode edge. The form of this barrier having been first determined by an appropriate solution of the Poisson equation in this region.
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14 GHz Schottky Diodes Using a p‐Doped Organic Polymer
Advanced Materials, 2022Kalaivanan Loganathan +2 more
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Eine Schottky-Diode besteht aus einem Substrat aus Gallium-Arsenid (5), auf das epitaktisch eine monokristalline mit Silizium dotierte Gallium-Arsenid-Schicht (6) aufgebracht ist. Zur Bildung eines Schottky-Kontaktes wird auf diese Schicht epitaktisch eine monokristalline Erbium-Arsenid-Schicht oder Ytterbium-Arsenid-Schicht (7) aufgebracht.
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Modeling of GaN Schottky diodes
2014GaN-based Schottky diodes for microwave, millimeter-wave power applications were characterized and modeled. The modeling technique employed dummy structure to derive parasitic elements introduced by access pads. Intrinsic elements were extracted by fitting junction capacitance for fixed grading factor of 0.5.
Jin, Chong +5 more
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β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings
Applied Physics Letters, 2021Hehe Gong, Xinxin Yu, Xuanhu Chen
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High-temperature characteristics of Ag and Ni/diamond Schottky diodes
Diamond and Related Materials, 2013Kenji Ueda, H Asano
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