Results 231 to 240 of about 10,847 (275)
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Ultrafast generation of magnetic fields in a Schottky diode
Nature, 2001For the development of future magnetic data storage technologies, the ultrafast generation of local magnetic fields is essential. Subnanosecond excitation of the magnetic state has so far been achieved by launching current pulses into micro-coils and micro-striplines and by using high-energy electron beams.
Acremann Y +5 more
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Gold/Ga0.85Al0.15Sb Schottky diodes
Journal of Applied Physics, 1985Gold on n-type Ga0.85Al0.15Sb devices were prepared and characterized. Current versus voltage (I-V) and capacitance versus voltage (C-V) measurements are discussed following the classical models of thermionic field emission and metal-insulator-semiconductor devices.
L. Gouskov +5 more
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Characterization and modelling of THz Schottky diodes
2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014Efficient characterization and modelling techniques have a key role in the development of Schottky diode-based devices with state-of-the-art performance. This paper makes an effort to introduce such techniques and to provide examples of how they are used by the Schottky community.
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Hydrogen detection by Schottky diodes
International Journal of Hydrogen Energy, 1982Abstract A compact hydrogen detector utilizing the Schottky barrier diode of a palladium-oxide-silicon structure as a sensor was developed. A bridge circuit compensated the temperature dependence of the diode characteristics. With the sensor operating at room temperature, the detector was able to respond to 2000 ppm H2 in air within 10 s.
K ITO, K KOJIMA
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1992
Schottky barriers and pn-junctions are the simplest active solid state devices. Their rectifying characteristics as well as the ability to expand or contract their space charge layer with bias is useful in many applications. With appropriate material and doping design, a wide variety of desirable operating characteristics can be obtained.
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Schottky barriers and pn-junctions are the simplest active solid state devices. Their rectifying characteristics as well as the ability to expand or contract their space charge layer with bias is useful in many applications. With appropriate material and doping design, a wide variety of desirable operating characteristics can be obtained.
openaire +1 more source
1982
Power can be efficiently converted from the mains to low voltage, high current, d.c. in the switched mode power supply. The output stages require low voltage, fast diodes to minimize the losses. Reverse recovery times of 30 ns, and reverse voltages of 200 V can be achieved by replacing the double-diffused structure with an epitaxial one.
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Power can be efficiently converted from the mains to low voltage, high current, d.c. in the switched mode power supply. The output stages require low voltage, fast diodes to minimize the losses. Reverse recovery times of 30 ns, and reverse voltages of 200 V can be achieved by replacing the double-diffused structure with an epitaxial one.
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Photosensitive barium titanate Schottky diodes
IEEE Transactions on Electron Devices, 1968The observation of photocurrents generated in Schottky barrier diodes on Remeika-grown reduced barium titanate is reported. Photon-to-electron conversion efficiencies of 5% at 0.3 μm have been measured which suggests that the effect may be large enough for employment in practical devices.
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Characterisation of Fullerene Schottky Diodes
1993The fabrication and characterisation of the fullerenes C60 and C70 as semiconductors in Schottky diodes are reported. The preparation of these devices involved forming a Schottky barrier between heavily doped n-Si and Ca with C70, and Mg-ln with C60. Electrical diode characteristics are determined and from these measurements both the device quality and
S. Curran +10 more
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1993
The use of metal-semiconductor diodes for detection was probably the first operational use of semiconductors. In 1874, Ferdinand Braun made a detector composed of a piece of galena (lead sulphide) and a metallic contact. As is well known, such devices have been extensively used for the same purpose in the simple radio receivers used in the beginning of
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The use of metal-semiconductor diodes for detection was probably the first operational use of semiconductors. In 1874, Ferdinand Braun made a detector composed of a piece of galena (lead sulphide) and a metallic contact. As is well known, such devices have been extensively used for the same purpose in the simple radio receivers used in the beginning of
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ECS Transactions, 2012
Metalorganic Chemical Vapor Deposition (MOCVD) GaN films were grown simultaneously on multiple substrates ranging in threading dislocation density from 10^3 to 10^10 cm^-2. GaN power Schottky diodes were fabricated on these films to examine the role of crystalline defects on the performance of these devices.
Randy P. Tompkins +12 more
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Metalorganic Chemical Vapor Deposition (MOCVD) GaN films were grown simultaneously on multiple substrates ranging in threading dislocation density from 10^3 to 10^10 cm^-2. GaN power Schottky diodes were fabricated on these films to examine the role of crystalline defects on the performance of these devices.
Randy P. Tompkins +12 more
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